Influence of B/N co-doping on electrical and photoluminescence properties of CVD grown homoepitaxial diamond films

2021 ◽  
Author(s):  
SRINIVASU KUNUKU ◽  
Mateusz Ficek ◽  
Aleksandra Wieloszynska ◽  
Magdalena Daniela Tamulewicz-Szwajkowska ◽  
Krzysztof Gajewski ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Microwave Plasma ◽  
Synthesis Method ◽  
Cvd Diamond ◽  
Nitrogen Vacancy ◽  
Electrochemical Sensing ◽  
Co Doping ◽  
Sensing Applications ◽  
B Doping ◽  
Resistance Value

Abstract Boron doped diamond (BDD) has great potential in electrical, and electrochemical sensing applications. The growth parameters, substrates, and synthesis method play a vital role in the preparation of semiconducting BDD to metallic BDD. Doping of other elements along with boron (B) into diamond demonstrated improved efficacy of B doping and exceptional properties. In the present study, B and nitrogen (N) co-doped diamond has been synthesized on single crystalline diamond (SCD) IIa and SCD Ib substrates in a microwave plasma-assisted chemical vapor deposition process. The B/N co-doping into CVD diamond has been conducted at constant N flow of N/C ~ 0.02 with three different B/C doping concentrations of B/C ~ 2500 ppm, 5000 ppm, 7500 ppm. AFM topography depicted the flat and smooth surface with low surface roughness for low B doping, whereas surface features like hillock structures and un-epitaxial diamond crystals with high surface roughness were observed for high B doping concentrations. KPFM measurements revealed that the work function (4.74 eV to 4.94 eV) has not varied significantly for CVD diamond synthesized with different B/C concentrations. Raman spectroscopy measurements described the growth of high-quality diamond and photoluminescence studies revealed the formation of high-density nitrogen-vacancy centers in CVD diamond layers. X-ray photoelectron spectroscopy results confirmed the successful B doping and the increase in N doping with B doping concentration. The room temperature electrical resistance measurements of CVD diamond layers (B/C ~ 7500 ppm) have shown the low resistance value ~ 9.29 Ω for CVD diamond/SCD IIa, and the resistance value ~ 16.55 Ω for CVD diamond/SCD Ib samples.

Hydrogen embrittlement of titanium during microwave plasma assisted CVD diamond deposition

2000 ◽  
Vol 16 (4) ◽  
pp. 355-360 ◽  
Author(s):  
Y. Fu ◽  
B. Yan ◽  
N.L. Loh ◽  
C.Q. Sun ◽  
P. Hing
Keyword(s):  
Hydrogen Embrittlement ◽  
Microwave Plasma ◽  
Cvd Diamond ◽  
Diamond Deposition

Well-defined polyindole–Au NPs nanobrush as a platform for electrochemical oxidation of ethanol

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Magdalena Warczak ◽  
Marianna Gniadek ◽  
Kamil Hermanowski ◽  
Magdalena Osial
Keyword(s):  
Conducting Polymers ◽  
Hybrid Material ◽  
Noble Metals ◽  
Electrochemical Impedance ◽  
Electrochemical Sensing ◽  
Alkaline Media ◽  
X Ray Diffraction ◽  
Long Term Stability ◽  
Sensing Applications ◽  
Energy Conversion Devices

Abstract Over the recent decades, conducting polymers have received great interest in many fields including microelectronics, energy conversion devices, and biosensing due to their unique properties like electrical conductivity, stability, and simple synthesis. Modification of conducting polymers with noble metals e.g. gold enhances their properties and opens new opportunities to also apply them in other fields like electrocatalysis. Here, we focus on the synthesis of hybrid material based on polyindole (PIN) nanobrush modified with gold nanoparticles and its application towards electrooxidation of ethanol. The paper presents systematic studies from synthesis to electrochemical sensing applications. For the characterization of PIN–Au composites, scanning electron microscopy and X-ray diffraction analyses were used. The electrocatalytic performance of the proposed hybrid material towards alcohol oxidation was studied in alkaline media by cyclic voltammetry, chronoamperometry, and electrochemical impedance spectroscopy techniques. The results show that PIN–Au hybrid can be employed as an effective and sensitive platform for the detection of alcohols, which makes it a promising material in electrocatalysis or sensors. Moreover, the proposed composite exhibits electrocatalytic activity towards ethanol oxidation, which combined with its good long-term stability opens the opportunity for its application in fuel cells.

scholarly journals Utilising Commercially Fabricated Printed Circuit Boards as an Electrochemical Biosensing Platform

Micromachines ◽  
2021 ◽  
Vol 12 (7) ◽  
pp. 793
Author(s):  
Uroš Zupančič ◽  
Joshua Rainbow ◽  
Pedro Estrela ◽  
Despina Moschou
Keyword(s):  
Printed Circuit Boards ◽  
Electrochemical Sensors ◽  
Cost Effective ◽  
Electrochemical Sensing ◽  
Label Free ◽  
Circuit Boards ◽  
Printed Circuit ◽  
Sensing Applications ◽  
Electrochemical Biosensing ◽  
Pre Treatment

Printed circuit boards (PCBs) offer a promising platform for the development of electronics-assisted biomedical diagnostic sensors and microsystems. The long-standing industrial basis offers distinctive advantages for cost-effective, reproducible, and easily integrated sample-in-answer-out diagnostic microsystems. Nonetheless, the commercial techniques used in the fabrication of PCBs produce various contaminants potentially degrading severely their stability and repeatability in electrochemical sensing applications. Herein, we analyse for the first time such critical technological considerations, allowing the exploitation of commercial PCB platforms as reliable electrochemical sensing platforms. The presented electrochemical and physical characterisation data reveal clear evidence of both organic and inorganic sensing electrode surface contaminants, which can be removed using various pre-cleaning techniques. We demonstrate that, following such pre-treatment rules, PCB-based electrodes can be reliably fabricated for sensitive electrochemical biosensors. Herein, we demonstrate the applicability of the methodology both for labelled protein (procalcitonin) and label-free nucleic acid (E. coli-specific DNA) biomarker quantification, with observed limits of detection (LoD) of 2 pM and 110 pM, respectively. The proposed optimisation of surface pre-treatment is critical in the development of robust and sensitive PCB-based electrochemical sensors for both clinical and environmental diagnostics and monitoring applications.

Formation of Nitrogen-Vacancy Centers in Homoepitaxial Diamond Thin Films Grown via Microwave Plasma-Assisted Chemical Vapor Deposition

2016 ◽  
Vol 15 (4) ◽  
pp. 614-618 ◽  
Author(s):  
Hideyuki Watanabe ◽  
Hitoshi Umezawa ◽  
Toyofumi Ishikawa ◽  
Kazuki Kaneko ◽  
Shinichi Shikata ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Nitrogen Vacancy ◽  
Nitrogen Vacancy Centers ◽  
Diamond Thin Films

scholarly journals Synthesis of Microwave Plasma CVD Diamond-Film on Variously-Coated Carbon-Steel Substrates.

1996 ◽  
Vol 47 (7) ◽  
pp. 611-615
Author(s):  
Hiroyuki TANAKA ◽  
Toshiaki TANAKA ◽  
Hideaki SOHMA ◽  
Masato YOSHIDA ◽  
Akira SAKAI ◽  
...  
Keyword(s):  
Carbon Steel ◽  
Diamond Film ◽  
Microwave Plasma ◽  
Cvd Diamond ◽  
Plasma Cvd ◽  
Microwave Plasma Cvd ◽  
Cvd Diamond Film ◽  
Steel Substrates ◽  
Coated Carbon

Polyaniline Sheathed Black Phosphorous: A Novel, Advanced Platform for Electrochemical Sensing Applications

2019 ◽  
Vol 32 (2) ◽  
pp. 238-247 ◽  
Author(s):  
L. Durai ◽  
A. Gopalakrishnan ◽  
Nandimalla Vishnu ◽  
Sushmee Badhulika
Keyword(s):  
Electrochemical Sensing ◽  
Sensing Applications ◽  
Black Phosphorous

Crystalline perfection of chemical vapor deposited diamond films

1990 ◽  
Vol 5 (8) ◽  
pp. 1591-1594 ◽  
Author(s):  
A. V. Hetherington ◽  
C. J. H. Wort ◽  
P. Southworth
Keyword(s):  
Grain Boundaries ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Stacking Faults ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Growth Conditions ◽  
Crystalline Perfection ◽  
Planar Defects ◽  
Chemical Vapor Deposited

The crystalline perfection of microwave plasma assisted chemical vapor deposited (MPACVD) diamond films grown under various conditions has been examined by TEM. Most CVD diamond films thus far reported contain a high density of defects, predominantly twins and stacking faults on {111} planes. We show that under appropriate growth conditions, these planar defects are eliminated from the center of the crystallites, and occur only at grain boundaries where the growing crystallites meet.

scholarly journals Effects on Microstructure and Ionic Conductivity of the Co-Doping with Strontium and Samarium of Ceria with Constant Oxygen Vacancy Concentration

Solids ◽  
2021 ◽  
Vol 2 (4) ◽  
pp. 341-370
Author(s):  
Toby Sherwood ◽  
Richard T. Baker
Keyword(s):  
Oxygen Vacancy ◽  
Grain Boundary ◽  
Vacancy Concentration ◽  
Synthesis Method ◽  
Ionic Conductivities ◽  
Solubility Limit ◽  
Material Structure ◽  
Oxygen Vacancy Concentration ◽  
Co Doping ◽  
Phase Pure

Partially substituted cerias are attractive materials for use as electrolytes in intermediate-temperature solid oxide fuel cells (SOFCs). Ceria doped with Sm or Gd has been found to have high ionic conductivities. However, there is interest in whether doping with multiple elements could lead to materials with higher ionic conductivities. The present study looks at the effects of co-doping Sr and Sm in ceria. A compositional series, Ce0.8+xSm0.2−2xSrxO2−δ (with x = 0–0.08), designed to have a constant oxygen vacancy concentration, was successfully prepared using the citrate–nitrate complexation method. A solubility limit of ~5 cation% Sr was found to impact material structure and conductivity. For phase-pure materials, with increasing Sr content, sinterability increased slightly and intrinsic conductivity decreased roughly linearly. The grain boundaries of phase-pure materials showed only a very small blocking effect, linked to the high-purity synthesis method employed, while at high %Sr, they became more blocking due to the presence of a SrCeO3 impurity. Grain capacitances were found to be 50–60 pF and grain boundary capacitances, 5–50 nF. The variation in the bulk capacitance with Sr content was small, and the variation in grain boundary capacitance could be explained by the variation in grain size. Slight deviations at high %Sr were attributed to the SrCeO3 impurity. In summary, in the absence of deleterious effects due to poor microstructure or impurities, such as Si, there is no improvement in conductivity on co-doping with Sr and Sm.

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