LoGHeD: An effective approach for negative differential resistance effect suppression in negative capacitance transistors

Abstract A negative capacitance transistor (NCFET) with fully depleted silicon-on-insulator (FDSOI) technology (NC-FDSOI) is one of the promising candidates for next-generation low-power devices. However, it suffers from the inherent negative differential resistance (NDR) effect, which is very detrimental to device and circuit designs. Aiming at overcoming this shortcoming, this paper proposes for the first time to use local Gaussian heavy doping technology (LoGHeD) in the channel near the drain side to suppress the NDR effect in the NC-FDSOI. The technical computer-aided design (TCAD) simulation results have validated that the output conductance (GDS) with LoGHeD, which is used to measure the NDR effect, increases compared to the conventional NC-FDSOI counterpart and approaches zero. With the increase in doping concentration, the inhibitory capability of the NDR effect shows a monotonously increasing trend. In addition, the proposed approach maintains and even enhances performances of the NC-FDSOI transistor regarding the electrical parameters, such as threshold voltage (VTH), sub-threshold swing (SS), switching current ratio (ION/IOFF), and drain-induced barrier lowering (DIBL).

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Simulation of FDSOI-ISFET with Tunable Sensitivity by Temperature and Dual-Gate Structure

Electronics ◽

10.3390/electronics10131585 ◽

2021 ◽

Vol 10 (13) ◽

pp. 1585

Author(s):

Hanbin Wang ◽

Jinshun Bi ◽

Mengxin Liu ◽

Tingting Han

Keyword(s):

Gate Voltage ◽

Computer Aided Design ◽

Silicon On Insulator ◽

Fully Depleted ◽

Gate Structure ◽

Different Temperatures ◽

Dual Gate ◽

Sensitivity Changes ◽

Increasing Temperature ◽

Aided Design

This work investigates the different sensitivities of an ion-sensitive field-effect transistor (ISFET) based on fully depleted silicon-on-insulator (FDSOI). Using computer-aided design (TCAD) tools, the sensitivity of a single-gate FDSOI based ISFET (FDSOI-ISFET) at different temperatures and the effects of the planar dual-gate structure on the sensitivity are determined. It is found that the sensitivity increases linearly with increasing temperature, reaching 890 mV/pH at 75 °C. By using a dual-gate structure and adjusting the control gate voltage, the sensitivity can be reduced from 750 mV/pH at 0 V control gate voltage to 540 mV/pH at 1 V control gate voltage. The above sensitivity changes are produced because the Nernst limit changes with temperature or the electric field generated by different control gate voltages causes changes in the carrier movement. It is proved that a single FDSOI-ISFET can have adjustable sensitivity by adjusting the operating temperature or the control gate voltage of the dual-gate device.

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Negative Drain-Induced Barrier Lowering and Negative Differential Resistance Effects in Negative-Capacitance Transistors

Microelectronics Journal ◽

10.1016/j.mejo.2020.104981 ◽

2021 ◽

pp. 104981

Author(s):

Tianyu Yu ◽

Weifeng Lü ◽

Zhifeng Zhao ◽

Peng Si ◽

Kai Zhang

Keyword(s):

Negative Differential Resistance ◽

Differential Resistance ◽

Negative Capacitance

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Negative differential resistance effect in ITO/TiO2/ITO based RRAM sandwich structures

2014 IEEE International Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2014.7061219 ◽

2014 ◽

Author(s):

Peijian Zhang ◽

Guangbing Chen ◽

Yong Liu ◽

Gangyi Hu ◽

Zhaohuan Tang ◽

...

Keyword(s):

Negative Differential Resistance ◽

Sandwich Structures ◽

Differential Resistance ◽

Negative Differential Resistance Effect

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Investigation of Radiation Effects on FD-SOI Hall Sensors by TCAD Simulations

Sensors ◽

10.3390/s20143946 ◽

2020 ◽

Vol 20 (14) ◽

pp. 3946

Author(s):

Linjie Fan ◽

Jinshun Bi ◽

Kai Xi ◽

Gangping Yan

Keyword(s):

Computer Aided Design ◽

Radiation Effects ◽

Heavy Ion ◽

Silicon On Insulator ◽

Voltage Sensitivity ◽

Hall Voltage ◽

Fully Depleted ◽

Offset Voltage ◽

Hall Sensors ◽

Tcad Simulations

This work investigates the responses of the fully-depleted silicon-on-insulator (FD-SOI) Hall sensors to the three main types of irradiation ionization effects, including the total ionizing dose (TID), transient dose rate (TDR), and single event transient (SET) effects. Via 3D technology computer aided design (TCAD) simulations with insulator fixed charge, radiation, heavy ion, and galvanomagnetic transport models, the performances of the transient current, Hall voltage, sensitivity, efficiency, and offset voltage have been evaluated. For the TID effect, the Hall voltage and sensitivity of the sensor increase after irradiation, while the efficiency and offset voltage decrease. As for TDR and SET effects, when the energy deposited on the sensor during a nuclear explosion or heavy ion injection is small, the transient Hall voltage of the off-state sensor first decreases and then returns to the initial value. However, if the energy deposition is large, the transient Hall voltage first decreases, then increases to a peak value and decreases to a fixed value. The physical mechanisms that produce different trends in the transient Hall voltage have been analyzed in detail.

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