scholarly journals Spatial aspects of spin polarization of structurally split surface states in thin films with magnetic exchange and spin-orbit interaction

Author(s):  
Ilya A. Nechaev ◽  
Eugene Krasovskii

Abstract A theoretical study is presented of the effect of an in-plane magnetic exchange field on the band structure of centrosymmetric films of noble metals and topological insulators. Based on an ab initio relativistic k·p theory, a minimal effective model is developed that describes two coupled copies of a Rashba or Dirac electronic system residing at the opposite surfaces of the film. The coupling leads to a structural gap at Γ and causes an exotic redistribution of the spin density in the film when the exchange field is introduced. We apply the model to a nineteen-layer Au(111) film and to a five-quintuple-layer Sb2Te3 film. We demonstrate that at each film surface the exchange field induces spectrum distortions similar to those known for Rashba or Dirac surface states with an important difference due to the coupling: At some energies, one branch of the state loses its counterpart with the oppositely directed group velocity. This suggests that a large-angle electron scattering between the film surfaces through the interior of the film is dominant or even the only possible for such energies. The spin-density redistribution accompanying the loss of the counterpart favors this scattering channel.

Author(s):  
D.E. Jesson ◽  
S. J. Pennycook

It is well known that conventional atomic resolution electron microscopy is a coherent imaging process best interpreted in reciprocal space using contrast transfer function theory. This is because the equivalent real space interpretation involving a convolution between the exit face wave function and the instrumental response is difficult to visualize. Furthermore, the crystal wave function is not simply related to the projected crystal potential, except under a very restrictive set of experimental conditions, making image simulation an essential part of image interpretation. In this paper we present a different conceptual approach to the atomic imaging of crystals based on incoherent imaging theory. Using a real-space analysis of electron scattering to a high-angle annular detector, it is shown how the STEM imaging process can be partitioned into components parallel and perpendicular to the relevant low index zone-axis.It has become customary to describe STEM imaging using the analytical treatment developed by Cowley. However, the convenient assumption of a phase object (which neglects the curvature of the Ewald sphere) fails rapidly for large scattering angles, even in very thin crystals. Thus, to avoid unpredictive numerical solutions, it would seem more appropriate to apply pseudo-kinematic theory to the treatment of the weak high angle signal. Diffraction to medium order zero-layer reflections is most important compared with thermal diffuse scattering in very thin crystals (<5nm). The electron wave function ψ(R,z) at a depth z and transverse coordinate R due to a phase aberrated surface probe function P(R-RO) located at RO is then well described by the channeling approximation;


1990 ◽  
Vol 200 ◽  
Author(s):  
S. Matsubara ◽  
T. Sakuma ◽  
S. Yamamichi ◽  
H. Yamaguchi ◽  
Y. Miyasaka

ABSTRACTSrTiO3 thin film preparation onto Si substrates using RF magnetron sputtering has been studied for a high capacitance density required for the next generation of LSI's. Structural and chemical analysis on the interface between SrTiO3 film and Si was carried out with cross-sectional TEM, EDX, and AES. Dielectric properties were measured on AuTi/SrTiO3/Si/Ti/Au capacitors. The as-grown dielectric films on Si were analyzed and found to consist of three layers; SiO2, amorphous SrTiO3 and crystalline SrTiO3, from interface toward film surface. By annealing at 600 °C, the amorphous SrTiO3 layer was recrystallized, and consequently the capacitance value increased. A typical specific capacitance was 4.7 fF/μm2 and the leakage current was in the order of 10−8 A/cm2, for 180 nm thick SrTiO3 film. The dielectric constant decreased from 147 to 56 with decreasing SrTiO3 film thickness from 480 nm to 80 nm. This is due to the low dielectric constant SiO2 layer (ε=3.9) at the interface. From the film thickness dependence of the ε value, the SiO2 layer thickness was calculated to be 3.9 nm, which agreed well with the value directly observed in the TEM.To avoid SiO2 layer formation, barrier layers between SrTiO3 and Si have been studied. Among various refractory and noble metals, RuSi and a multi-layer of Pt/Ti have been found to be promising candidates for the barrier material. When RuSi film or Pt/Ti film was formed between SrTiO3 film and Si substrate, dielectric constant of about 190 was obtained in dependent of the SrTiO3 film thickness in the range of 80–250 nm. Analysis on the barrier layers was performed by means of RBS, XPS and XRD.


2017 ◽  
Vol 12 (8) ◽  
pp. 757-762 ◽  
Author(s):  
Chuan Zhao ◽  
Tenzin Norden ◽  
Peiyao Zhang ◽  
Puqin Zhao ◽  
Yingchun Cheng ◽  
...  

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