Synergistic effect of titanium, boron and oxygen on large-size single-crystal diamond growth at high pressure and high temperature

Abstract In this study, the synergistic impact of boron, oxygen and titanium on growing large single-crystal diamonds was studied using different concentrations of B2O3 in a solvent-carbon system under 5.5-5.7 GPa and 1300-1500 ℃. The study found that it was difficult for boron atoms to enter the crystal when boron and oxygen impurities were doped using B2O3 without the addition of Ti. However, a high boron content was achieved in the doped diamonds that were synthesised with the addition of Ti. Additionally, boron-oxygen complexes were found on the surface of the crystal, and oxygen-related impurities appeared in the crystal interior when Ti added in the FeNi-C system. The results showed that the introduction of Ti in the synthesis cavity could effectively control the amount of boron and oxygen in the crystal. This not only has important scientific significance for understanding the synergistic influence of boron, oxygen and titanium on the growth of diamond in the earth, but also for the preparation of high-concentration boron or oxygen containing semiconductor diamond technologies.

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New assembly design suitable for tower-shaped large size single-crystal diamond growth under high pressure and high temperature

CrystEngComm ◽

10.1039/c6ce02164f ◽

2017 ◽

Vol 19 (1) ◽

pp. 137-141 ◽

Cited By ~ 7

Author(s):

Yadong Li ◽

Xiaopeng Jia ◽

Ning Chen ◽

Liangchao Chen ◽

Longsuo Guo ◽

...

Keyword(s):

High Pressure ◽

High Temperature ◽

Single Crystal ◽

Diamond Growth ◽

Assembly Design ◽

Large Size ◽

Single Crystal Diamond

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Surface Morphology and Microstructure Evolution of Single Crystal Diamond during Different Homoepitaxial Growth Stages

Materials ◽

10.3390/ma14205964 ◽

2021 ◽

Vol 14 (20) ◽

pp. 5964

Author(s):

Guoqing Shao ◽

Juan Wang ◽

Shumiao Zhang ◽

Yanfeng Wang ◽

Wei Wang ◽

...

Keyword(s):

Surface Morphology ◽

Single Crystal ◽

Cross Section ◽

Growth Model ◽

Diamond Growth ◽

Step Flow ◽

Homoepitaxial Growth ◽

Diamond Substrate ◽

Single Crystal Diamond ◽

Step Flow Growth

Homoepitaxial growth of step-flow single crystal diamond was performed by microwave plasma chemical vapor deposition system on high-pressure high-temperature diamond substrate. A coarse surface morphology with isolated particles was firstly deposited on diamond substrate as an interlayer under hillock growth model. Then, the growth model was changed to step-flow growth model for growing step-flow single crystal diamond layer on this hillock interlayer. Furthermore, the surface morphology evolution, cross-section and surface microstructure, and crystal quality of grown diamond were evaluated by scanning electron microscopy, high-resolution transmission electron microcopy, and Raman and photoluminescence spectroscopy. It was found that the surface morphology varied with deposition time under step-flow growth parameters. The cross-section topography exhibited obvious inhomogeneity in crystal structure. Additionally, the diamond growth mechanism from the microscopic point of view was revealed to illustrate the morphological and structural evolution.

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Measurement of charge carrier's transportation in a large size self-standing CVD single crystal diamond film fabricated using lift-off method

Diamond and Related Materials ◽

10.1016/j.diamond.2009.08.002 ◽

2010 ◽

Vol 19 (2-3) ◽

pp. 162-165 ◽

Cited By ~ 2

Author(s):

F. Fujita ◽

A. Kakimoto ◽

J.H. Kaneko ◽

N. Tsubouchi ◽

Y. Mokuno ◽

...

Keyword(s):

Single Crystal ◽

Diamond Film ◽

Large Size ◽

Single Crystal Diamond ◽

Lift Off

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Nitrogen and Silicon Defect Incorporation during Homoepitaxial CVD Diamond Growth on (111) Surfaces

MRS Proceedings ◽

10.1557/opl.2015.304 ◽

2015 ◽

Vol 1734 ◽

Cited By ~ 1

Author(s):

Samuel L. Moore ◽

Yogesh K. Vohra

Keyword(s):

Single Crystal ◽

Photoelectron Spectroscopy ◽

Microwave Plasma ◽

Nitrogen Concentration ◽

Chemical Vapor ◽

Cvd Diamond ◽

Diamond Growth ◽

Defect Center ◽

Defect Centers ◽

Single Crystal Diamond

ABSTRACTChemical Vapor Deposited (CVD) diamond growth on (111)-diamond surfaces has received increased attention lately because of the use of N-V related centers in quantum computing as well as application of these defect centers in sensing nano-Tesla strength magnetic fields. We have carried out a detailed study of homoepitaxial diamond deposition on (111)-single crystal diamond (SCD) surfaces using a 1.2 kW microwave plasma CVD (MPCVD) system employing methane/hydrogen/nitrogen/oxygen gas phase chemistry. We have utilized Type Ib (111)-oriented single crystal diamonds as seed crystals in our study. The homoepitaxially grown diamond films were analyzed by Raman spectroscopy, Photoluminescence Spectroscopy (PL), X-ray Photoelectron Spectroscopy (XPS), Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). The nitrogen concentration in the plasma was carefully varied between 0 and 1500 ppm while a ppm level of silicon impurity is present in the plasma from the quartz bell jar. The concentration of N-V defect centers with PL zero phonon lines (ZPL) at 575nm and 637nm and the Si-defect center with a ZPL at 737nm were experimentally detected from a variation in CVD growth conditions and were quantitatively studied. Altering nitrogen and oxygen concentration in the plasma was observed to directly affect N-V and Si-defect incorporation into the (111)-oriented diamond lattice and these findings are presented.

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Single Crystal CVD Diamond growth and characterizations

MRS Proceedings ◽

10.1557/proc-0956-j07-02 ◽

2006 ◽

Vol 956 ◽

Cited By ~ 1

Author(s):

Nicolas Olivier Tranchant ◽

Dominique Tromson ◽

Zdenek Remes ◽

Licinio Rocha ◽

Milos Nesladek ◽

...

Keyword(s):

Single Crystal ◽

Microwave Plasma ◽

Plasma Reactor ◽

Optical Emission ◽

Cvd Diamond ◽

Diamond Growth ◽

Photocurrent Spectroscopy ◽

Excited Species ◽

Single Crystal Diamond

ABSTRACTDue to its radiation harness, single crystal CVD diamond is a remarkable material for the construction of detectors used in hadron physics and for medical therapy. In this work, single crystal CVD diamond plates were grown in a microwave plasma reactor, using home design substrate holder and a relatively high pressure. Optical Emission Spectroscopy was employed during the MW-PECVD growth to characterize excited species present in the plasma and to detect the presence of residual gases such as nitrogen which is unsuitable for detector's applications.The samples were characterized using various methods such as Raman spectroscopy, photoluminescence (PL), photocurrent spectroscopy, Raman mapping, birefringence microscopy, optical microscopy and also AFM. The best sample, exhibits a FWHM for the 1332 cm−1 Raman peak about 1.6 cm−1. Room temperature PL spectra showed no N–related luminescence, confirming the high quality of the grown single crystal diamond.

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