Improving the edge quality of single-crystal diamond growth by a substrate holder – An analysis

To improve the edge regions. Growth using the old substrate holder, the edge quality was improved, but the average growth rate decreased. So, a newly substrate holder was designed. The edge quality and the growth rate were both improved.

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Single Crystal CVD Diamond growth and characterizations

MRS Proceedings ◽

10.1557/proc-0956-j07-02 ◽

2006 ◽

Vol 956 ◽

Cited By ~ 1

Author(s):

Nicolas Olivier Tranchant ◽

Dominique Tromson ◽

Zdenek Remes ◽

Licinio Rocha ◽

Milos Nesladek ◽

...

Keyword(s):

Single Crystal ◽

Microwave Plasma ◽

Plasma Reactor ◽

Optical Emission ◽

Cvd Diamond ◽

Diamond Growth ◽

Photocurrent Spectroscopy ◽

Excited Species ◽

Single Crystal Diamond

ABSTRACTDue to its radiation harness, single crystal CVD diamond is a remarkable material for the construction of detectors used in hadron physics and for medical therapy. In this work, single crystal CVD diamond plates were grown in a microwave plasma reactor, using home design substrate holder and a relatively high pressure. Optical Emission Spectroscopy was employed during the MW-PECVD growth to characterize excited species present in the plasma and to detect the presence of residual gases such as nitrogen which is unsuitable for detector's applications.The samples were characterized using various methods such as Raman spectroscopy, photoluminescence (PL), photocurrent spectroscopy, Raman mapping, birefringence microscopy, optical microscopy and also AFM. The best sample, exhibits a FWHM for the 1332 cm−1 Raman peak about 1.6 cm−1. Room temperature PL spectra showed no N–related luminescence, confirming the high quality of the grown single crystal diamond.

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Reducing Threading Dislocations of Single-Crystal Diamond via In Situ Tungsten Incorporation

Materials ◽

10.3390/ma15020444 ◽

2022 ◽

Vol 15 (2) ◽

pp. 444

Author(s):

Ruozheng Wang ◽

Fang Lin ◽

Gang Niu ◽

Jianing Su ◽

Xiuliang Yan ◽

...

Keyword(s):

Single Crystal ◽

High Performance ◽

Crystal Quality ◽

Diamond Growth ◽

Sem Images ◽

High Pressure High Temperature ◽

Diamond Substrate ◽

Single Crystal Diamond

A lower dislocation density substrate is essential for realizing high performance in single-crystal diamond electronic devices. The in-situ tungsten-incorporated homoepitaxial diamond by introducing tungsten hexacarbonyl has been proposed. A 3 × 3 × 0.5 mm3 high-pressure, high-temperature (001) diamond substrate was cut into four pieces with controlled experiments. The deposition of tungsten-incorporated diamond changed the atomic arrangement of the original diamond defects so that the propagation of internal dislocations could be inhibited. The SEM images showed that the etching pits density was significantly decreased from 2.8 × 105 cm−2 to 2.5 × 103 cm−2. The reduction of XRD and Raman spectroscopy FWHM proved that the double-layer tungsten-incorporated diamond has a significant effect on improving the crystal quality of diamond bulk. These results show the evident impact of in situ tungsten-incorporated growth on improving crystal quality and inhibiting the dislocations propagation of homoepitaxial diamond, which is of importance for high-quality diamond growth.

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Surface Morphology and Microstructure Evolution of Single Crystal Diamond during Different Homoepitaxial Growth Stages

Materials ◽

10.3390/ma14205964 ◽

2021 ◽

Vol 14 (20) ◽

pp. 5964

Author(s):

Guoqing Shao ◽

Juan Wang ◽

Shumiao Zhang ◽

Yanfeng Wang ◽

Wei Wang ◽

...

Keyword(s):

Surface Morphology ◽

Single Crystal ◽

Cross Section ◽

Growth Model ◽

Diamond Growth ◽

Step Flow ◽

Homoepitaxial Growth ◽

Diamond Substrate ◽

Single Crystal Diamond ◽

Step Flow Growth

Homoepitaxial growth of step-flow single crystal diamond was performed by microwave plasma chemical vapor deposition system on high-pressure high-temperature diamond substrate. A coarse surface morphology with isolated particles was firstly deposited on diamond substrate as an interlayer under hillock growth model. Then, the growth model was changed to step-flow growth model for growing step-flow single crystal diamond layer on this hillock interlayer. Furthermore, the surface morphology evolution, cross-section and surface microstructure, and crystal quality of grown diamond were evaluated by scanning electron microscopy, high-resolution transmission electron microcopy, and Raman and photoluminescence spectroscopy. It was found that the surface morphology varied with deposition time under step-flow growth parameters. The cross-section topography exhibited obvious inhomogeneity in crystal structure. Additionally, the diamond growth mechanism from the microscopic point of view was revealed to illustrate the morphological and structural evolution.

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Nitrogen and Silicon Defect Incorporation during Homoepitaxial CVD Diamond Growth on (111) Surfaces

MRS Proceedings ◽

10.1557/opl.2015.304 ◽

2015 ◽

Vol 1734 ◽

Cited By ~ 1

Author(s):

Samuel L. Moore ◽

Yogesh K. Vohra

Keyword(s):

Single Crystal ◽

Photoelectron Spectroscopy ◽

Microwave Plasma ◽

Nitrogen Concentration ◽

Chemical Vapor ◽

Cvd Diamond ◽

Diamond Growth ◽

Defect Center ◽

Defect Centers ◽

Single Crystal Diamond

ABSTRACTChemical Vapor Deposited (CVD) diamond growth on (111)-diamond surfaces has received increased attention lately because of the use of N-V related centers in quantum computing as well as application of these defect centers in sensing nano-Tesla strength magnetic fields. We have carried out a detailed study of homoepitaxial diamond deposition on (111)-single crystal diamond (SCD) surfaces using a 1.2 kW microwave plasma CVD (MPCVD) system employing methane/hydrogen/nitrogen/oxygen gas phase chemistry. We have utilized Type Ib (111)-oriented single crystal diamonds as seed crystals in our study. The homoepitaxially grown diamond films were analyzed by Raman spectroscopy, Photoluminescence Spectroscopy (PL), X-ray Photoelectron Spectroscopy (XPS), Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). The nitrogen concentration in the plasma was carefully varied between 0 and 1500 ppm while a ppm level of silicon impurity is present in the plasma from the quartz bell jar. The concentration of N-V defect centers with PL zero phonon lines (ZPL) at 575nm and 637nm and the Si-defect center with a ZPL at 737nm were experimentally detected from a variation in CVD growth conditions and were quantitatively studied. Altering nitrogen and oxygen concentration in the plasma was observed to directly affect N-V and Si-defect incorporation into the (111)-oriented diamond lattice and these findings are presented.

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