A review of β-Ga2O3 single crystal defects, their effects on device performance and their formation mechanism

2019 ◽  
Vol 40 (1) ◽  
pp. 011804 ◽  
Author(s):  
Bo Fu ◽  
Zhitai Jia ◽  
Wenxiang Mu ◽  
Yanru Yin ◽  
Jian Zhang ◽  
...  
Author(s):  
G. G. Hembree ◽  
M. A. Otooni ◽  
J. M. Cowley

The formation of oxide structures on single crystal films of metals has been investigated using the REMEDIE system (for Reflection Electron Microscopy and Electron Diffraction at Intermediate Energies) (1). Using this instrument scanning images can be obtained with a 5 to 15keV incident electron beam by collecting either secondary or diffracted electrons from the crystal surface (2). It is particularly suited to studies of the present sort where the surface reactions are strongly related to surface morphology and crystal defects and the growth of reaction products is inhomogeneous and not adequately described in terms of a single parameter. Observation of the samples has also been made by reflection electron diffraction, reflection electron microscopy and replication techniques in a JEM-100B electron microscope.A thin single crystal film of copper, epitaxially grown on NaCl of (100) orientation, was repositioned on a large copper single crystal of (111) orientation.


Author(s):  
T.C. Sheu ◽  
S. Myhajlenko ◽  
D. Davito ◽  
J.L. Edwards ◽  
R. Roedel ◽  
...  

Liquid encapsulated Czochralski (LEC) semi-insulating (SI) GaAs has applications in integrated optics and integrated circuits. Yield and device performance is dependent on the homogeniety of the wafers. Therefore, it is important to characterise the uniformity of the GaAs substrates. In this respect, cathodoluminescence (CL) has been used to detect the presence of crystal defects and growth striations. However, when SI GaAs is examined in a scanning electron microscope (SEM), there will be a tendency for the surface to charge up. The surface charging affects the backscattered and secondary electron (SE) yield. Local variations in the surface charge will give rise to contrast (effectively voltage contrast) in the SE image. This may be associated with non-uniformities in the spatial distribution of resistivity. Wakefield et al have made use of “charging microscopy” to reveal resistivity variations across a SI GaAs wafer. In this work we report on CL imaging, the conditions used to obtain “charged” SE images and some aspects of the contrast behaviour.


2011 ◽  
Vol 312-315 ◽  
pp. 983-988
Author(s):  
Seyed Vahid Hosseini ◽  
Mehrdad Vahdati ◽  
Ali Shokuhfar

Nowadays, the nano-machining process is used to produce high quality finished surfaces with precise form accuracy. To understand and analyze the chip formation mechanism of nano-machining process on an atomistic scale, since the experimentation is not an easy task, numerical simulation such as molecular dynamic (MD) simulation is a very useful method. In this paper, MD simulation of the nano-metric cutting of single-crystal copper was performed with a single crystal diamond tool. The model was solved with both pair wise Morse potential function and embedded atom method (EAM) potential to simulate the inter-atomic force between the work-piece and a rigid tool. The chip formation mechanism, dislocation generation, tool forces and generated temperature were investigated. Results show that the Morse potential cannot perform an appropriate defect formation and plastic deformation in nano-metric cutting of metals. Also, tool forces in Morse potential are more than the forces in EAM potential. Furthermore, the fluctuations of resultant forces in Morse potential are greater than that of EAM. In addition, using many-body interaction potentials like EAM can lead to substantial changes in surface energies, elastic-plastic properties and atomic displacement, compared with the pair-wise potentials like Morse. Finally, the atomic displacement investigation shows that in EAM potential study, only the atoms in a local region near the cutting process are displaced, but in Morse potential a large portion of atoms has affected during cutting process. Subsequently, the chip temperature in EAM potential is more than that of Morse potential.


2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Satoru Iizuka ◽  
Takumasa Muraoka

Spherical MgO nanoparticles with a hollow inside, that is, MgO hollow nanospheres, were created in Ar/O2plasma produced by radio frequency (RF) impulse discharge using a Mg rod electrode. The hollow nanospheres were found on the SiO2plates placed near the powered Mg electrode. The electron refraction pattern showed that each nanosphere was made of a single crystal of MgO. Since the shape was spherical, these nanoparticles seemed to be created during the levitation in the plasma without touching any walls. The formation mechanism with a quasiliquid cooling model was also discussed.


2017 ◽  
Vol 193 ◽  
pp. 371-379 ◽  
Author(s):  
Cui Tingting ◽  
Yanting Zhao ◽  
Yao Qian ◽  
Yali Shao ◽  
Mengting Fan ◽  
...  

CrystEngComm ◽  
2014 ◽  
Vol 16 (20) ◽  
pp. 4176-4182 ◽  
Author(s):  
Xin Yang ◽  
Gang Xu ◽  
Zhaohui Ren ◽  
Xiao Wei ◽  
Chunying Chao ◽  
...  

Single-crystal BiFeO3 (BFO) microplates with dominant (012) facets were successfully synthesized by a facile one-pot hydrothermal method. The adsorption behaviour of the organic ligands may play a key role in the formation of the BFO microplates.


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