scholarly journals Soliton-impurity interaction in two coupled ferromagnetic chains

2019 ◽  
Vol 1186 ◽  
pp. 012017
Author(s):  
R S Kamburova ◽  
M T Primatarowa ◽  
S K Varbev
Keyword(s):  
Impurity Interaction

Point Defect Absorption and Dislocation Loop Formation at Grain Boundaries in Hvem-Irradiated Zr and Its Alloys:1. Influence of Solute Addition

1985 ◽  
Vol 43 ◽  
pp. 350-351
Author(s):  
R.A. Herring ◽  
M. Griffiths ◽  
M.H Loretto ◽  
R.E. Smallman
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Point Defect ◽  
Reactor Core ◽  
Solute Concentration ◽  
Nuclear Industry ◽  
Dislocation Loops ◽  
Loop Formation ◽  
Component Material ◽  
Impurity Interaction

Because Zr is used in the nuclear industry to sheath fuel and as structural component material within the reactor core, it is important to understand Zr's point defect properties. In the present work point defect-impurity interaction has been assessed by measuring the influence of grain boundaries on the width of the zone denuded of dislocation loops in a series of irradiated Zr alloys. Electropolished Zr and its alloys have been irradiated using an AEI EM7 HVEM at 1 MeV, ∼675 K and ∼10-6 torr vacuum pressure. During some HVEM irradiations it has been seen that there is a difference in the loop nucleation and growth behaviour adjacent to the grain boundary as compared with the mid-grain region. The width of the region influenced by the presence of the grain boundary should be a function of the irradiation temperature, dose rate, solute concentration and crystallographic orientation.

The Peierls phase transition in n-Ge caused by impurity interaction

2009 ◽  
Vol 73 (8) ◽  
pp. 1082-1084
Author(s):  
A. I. Veinger ◽  
A. G. Zabrodskii ◽  
T. V. Tisnek ◽  
S. I. Goloshchapov
Keyword(s):  
Phase Transition ◽  
Impurity Interaction

Pulsed Laser Treatment of Virgin, Self and Europium Implanted Nickel: Evidence of Defect Impurity Interaction

1981 ◽  
Vol 7 ◽  
Author(s):  
G. Battaglin ◽  
A. Carnera ◽  
G. Della Mea ◽  
P. Mazzoldi ◽  
Animesh K. Jain ◽  
...  
Keyword(s):  
Solid Solution ◽  
Liquid Phase ◽  
Laser Treatment ◽  
Ruby Laser ◽  
Pulsed Laser ◽  
Laser Pulses ◽  
Metastable Solid Solution ◽  
Ion Channeling ◽  
Impurity Interaction ◽  
The Eu

ABSTRACTWe present a comparative study (by 1.8 MeV 4He+ ion channeling) of virgin, self and Eu implanted single crystals of nickel, under irradiation with single ruby laser pulses. The as implanted Eu is nearly non-substitutional and remains so, even after laser treatment. The comparative defect dechanneling behaviour provides explicit evidence of defect-impurity interaction which may be suppressing the formation of an expected metastable solid solution in the Eu-Ni system, which possesses miscibility in the liquid phase. A clear surface Eu peak appears at 2.1 J/cm2.

The Effects on Electric Field and Hydrostatic Pressure on the Doped Properties in a Strained (In,Ga)N-GaN Coupled Quantum Wells

2021 ◽  
Vol 16 (1) ◽  
pp. 97-103
Author(s):  
Xin-Nan Li ◽  
Guang-Xin Wang ◽  
Xiu-Zhi Duan
Keyword(s):  
Hydrostatic Pressure ◽  
Binding Energy ◽  
Electric Field ◽  
Quantum Wells ◽  
Variational Approach ◽  
Coupled Quantum Wells ◽  
Zinc Blende ◽  
Impurity Interaction ◽  
The Right ◽  
Peak Value

A variational approach is utilized to investigated the electron-impurity interaction in zinc-blende (In,Ga)N-GaN strained coupled quantum wells. The donor imputrity states are studied in consideration of the effects of hydrostatic pressure and external electric field. Our results indicate that the binding energy visibly depends on hydrostatic pressure, strain of coupled quantum wells, and applied electric field. The binding energy demonstrates a peak value with the reduction of the left-well width, and which displays a minimum value with the increment of the middle-barrier width. A decreasing behavior on the binding energy is also demonstrated when the right-well width enhances. Also the binding energy augments constantly with the increasing hydrostatic pressure. Besides, the dependency of the binding energy on variation of impurity position has been analyzed detailedly.

Free-Carrier Generation via Exciton-Phonon and Exciton-Impurity Interaction in Ge Crystals

1976 ◽  
Vol 74 (1) ◽  
pp. 81-89 ◽  
Author(s):  
B. V. Novikov ◽  
N. S. Sokolov ◽  
S. V. Gastev
Keyword(s):  
Free Carrier ◽  
Carrier Generation ◽  
Impurity Interaction
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