scholarly journals Commutation as a substitute phenomenon of the communicative competence of a hearing-impaired student with a complex defect structure

2020 ◽  
Vol 1691 ◽  
pp. 012147
Author(s):  
I L Solovyeva ◽  
N V Tarasova ◽  
S G Chigrina
Keyword(s):  
Defect Structure ◽  
Communicative Competence ◽  
Hearing Impaired ◽  
Complex Defect

Simulation of the Oriented Crystallisation of Cu/Pd(001) Amorphous Film

2006 ◽  
Vol 115 ◽  
pp. 311-314
Author(s):  
A.A. Dmitriev ◽  
Alexander V. Evteev ◽  
V.M. Ievlev ◽  
A.T. Kosilov ◽  
Elena V. Levchenko
Keyword(s):  
Molecular Dynamics ◽  
Defect Structure ◽  
Amorphous Film ◽  
Molecular Dynamics Method ◽  
Crystal Lattices ◽  
Elastic Stresses ◽  
Complex Defect ◽  
Cu Film ◽  
Dynamics Method ◽  
Formed Structure

Crystallisation processes of amorphous Cu-film on Pd(001) substrate have been investigated by molecular dynamics method. It has been established that the formed structure has tetragonal distortions; the elastic stresses caused by dimensional misfit of crystal lattices of the substrate and the film lead to the formation of complex defect structure changing during the annealing.

scholarly journals Структурные и оптические характеристики ультрафиолетовых 4H-SiC-детекторов, облученных ионами аргона

2020 ◽  
Vol 54 (11) ◽  
pp. 1244
Author(s):  
Е.В. Калинина ◽  
М.Ф. Кудояров ◽  
И.П. Никитина ◽  
Е.В. Иванова ◽  
В.В. Забродский
Keyword(s):  
Silicon Carbide ◽  
Quantum Efficiency ◽  
Point Defects ◽  
Defect Structure ◽  
Optical Characteristics ◽  
Linear Type ◽  
Uv Photodetectors ◽  
Complex Defect

Abstract The paper presents the results of a study of the effect of irradiation with heavy Ar ions on the structural and optical characteristics of 4H-SiC. It has been shown that as a result of already single irradiation with Ar ions with an energy of 53 MeV with a fluence of 1٠1010 cm-2, at least 2 powerful local regions with negative deformation prevail in the structure of silicon carbide. Along with this, a region with positive deformation is also observed in the structure. The formation of localized clusters with negative and positive deformations, along with the undisturbed matrix, is accompanied by the formation of linear type defects that partially relieve stresses in the structure. It is assumed that the resulting complex defect structure upon irradiation with Ar ions provides the effect of gettering of point defects and leads to the quantum efficiency of 4H-SiC UV photodetectors at the level of the initial samples.

Complex Defect Structure in the Core of Sn-Doped In2O3 Nanorods and Its Relationship with a Dislocation-Driven Growth Mechanism

2011 ◽  
Vol 115 (37) ◽  
pp. 18083-18087 ◽  
Author(s):  
D. Maestre ◽  
D. Häussler ◽  
A. Cremades ◽  
W. Jäger ◽  
J. Piqueras
Keyword(s):  
Growth Mechanism ◽  
Defect Structure ◽  
Complex Defect ◽  
The Core

Electron Microscope Observations of Mechanical Metamorphism in Iron Meteorites

1970 ◽  
Vol 28 ◽  
pp. 488-489
Author(s):  
D. Faulkner ◽  
G.W. Lorimer ◽  
H.J. Axon
Keyword(s):  
Electron Microscope ◽  
Defect Structure ◽  
Shock Loading ◽  
List Type ◽  
Iron Meteorites

It is now generally accepted that meteorites are fragments produced by the collision of parent bodies of asteroidal dimensions. Optical metallographic evidence suggests that there exists a group of iron meteorites which exhibit structures similar to those observed in explosively shock loaded iron. It seems likely that shock loading of meteorites could be produced by preterrestrial impact of their parent bodies as mentioned above.We have therefore looked at the defect structure of one of these meteorites (Trenton) and compared the results with those made on a) an unshocked ‘standard’ meteorite (Canyon Diablo)b) an artificially shocked ‘standard’ meteorite (Canyon Diablo) andc) an artificially shocked specimen of pure α-iron.

A new type of defect structure in 124-superconducting oxide revealed by HREM

1991 ◽  
Vol 49 ◽  
pp. 1092-1093
Author(s):  
R. Sharma ◽  
B.L. Ramakrishna ◽  
N.N. Thadhani ◽  
D. Hianes ◽  
Z. Iqbal
Keyword(s):  
Shock Wave ◽  
Defect Structure ◽  
Neutron Radiation ◽  
Weak Links ◽  
Defect Structures ◽  
New Materials ◽  
New Type ◽  
Current Densities ◽  
Processing Techniques ◽  
Microstructural Studies

After materials with superconducting temperatures higher than liquid nitrogen have been prepared, more emphasis has been on increasing the current densities (Jc) of high Tc superconductors than finding new materials with higher transition temperatures. Different processing techniques i.e thin films, shock wave processing, neutron radiation etc. have been applied in order to increase Jc. Microstructural studies of compounds thus prepared have shown either a decrease in gram boundaries that act as weak-links or increase in defect structure that act as flux-pinning centers. We have studied shock wave synthesized Tl-Ba-Cu-O and shock wave processed Y-123 superconductors with somewhat different properties compared to those prepared by solid-state reaction. Here we report the defect structures observed in the shock-processed Y-124 superconductors.

Defects in ion implanted silicon

1978 ◽  
Vol 36 (1) ◽  
pp. 386-387
Author(s):  
J.A. Lambert ◽  
P.S. Dobson
Keyword(s):  
Defect Structure ◽  
Dislocation Loops ◽  
Frank Loop ◽  
Burgers Vector ◽  
Temperature Range ◽  
Perfect Dislocation ◽  
Contrast Analysis ◽  
Image Position ◽  
Ion Implanted

The defect structure of ion-implanted silicon, which has been annealed in the temperature range 800°C-1100°C, consists of extrinsic Frank faulted loops and perfect dislocation loops, together with‘rod like’ defects elongated along <110> directions. Various structures have been suggested for the elongated defects and it was argued that an extrinsically faulted Frank loop could undergo partial shear to yield an intrinsically faulted defect having a Burgers vector of 1/6 <411>.This defect has been observed in boron implanted silicon (1015 B+ cm-2 40KeV) and a detailed contrast analysis has confirmed the proposed structure.

A crystallographic analysis of the CoSi/Si(111) interface using Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 574-575
Author(s):  
A.C. Daykin ◽  
C.J. Kiely ◽  
R.C. Pond ◽  
J.L. Batstone
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Defect Structure ◽  
Room Temperature ◽  
Theoretical Method ◽  
Crystallographic Analysis ◽  
Si Substrate ◽  
Transmission Electron ◽  
Theoretical Predictions

When CoSi2 is grown onto a Si(111) surface it can form in two distinct orientations. A-type CoSi2 has the same orientation as the Si substrate and B-type is rotated by 180° degrees about the [111] surface normal.One method of producing epitaxial CoSi2 is to deposit Co at room temperature and anneal to 650°C.If greater than 10Å of Co is deposited then both A and B-type CoSi2 form via a number of intermediate silicides .The literature suggests that the co-existence of A and B-type CoSi2 is in some way linked to these intermediate silicides analogous to the NiSi2/Si(111) system. The phase which forms prior to complete CoSi2 formation is CoSi. This paper is a crystallographic analysis of the CoSi2/Si(l11) bicrystal using a theoretical method developed by Pond. Transmission electron microscopy (TEM) has been used to verify the theoretical predictions and to characterise the defect structure at the interface.

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