scholarly journals Influence of laser-induced plasma parameters on the formation of laser-induced surface-periodic structures

2021 ◽  
Vol 2077 (1) ◽  
pp. 012009
Author(s):  
D A Kochuev ◽  
A A Voznesenskaya ◽  
A F Galkin ◽  
K S Khorkov ◽  
A S Chernikov ◽  
...  

Abstract The paper presents the results of processing a silicon surface with subpicosecond laser pulses under various exposure conditions. The variable conditions were: pressure in the working chamber, the speed of scanning the silicon surface with a laser beam and the laser pulse energy. Special attention was paid to the interaction of the laser-induced plasma plume with the surface of the processed material, with laser radiation and with the medium. The influence of the medium on the parameters of the laser-induced plasma is estimated. The result of this interaction is a change in the spatial characteristics of the laser-induced plasma channel, the period and type of the formed periodic surface structures, what is related to the change in the laser radiation passing through the medium at different pressures.

Author(s):  
Д.А. Кочуев ◽  
К.С. Хорьков ◽  
А.С. Черников ◽  
Р.В. Чкалов ◽  
В.Г. Прокошев

The paper presents the results of processing titanium surface in n-hexane at various pressures by femtosecond laser radiation. The effect of laser-induced plasma on the nature of the formation of periodic surface structures in the pressure range from 6 mbar to 22 bar is considered. The study of the surface of the processed samples was carried out using scanning electron microscopy. The dependence of the period of obtained laser-induced periodic surface structures on the pressure in working vessel and the treatment regime is shown.


2017 ◽  
Vol 18 (3) ◽  
pp. 309-312
Author(s):  
O.Yu. Bonchyk ◽  
S.G. Kiyak ◽  
I.A. Mohylyak ◽  
D.I. Popovych

The experimental studies of geometry features of silicon layers in areas of second and millisecond laser pulses were carried out. The results of microscopic studies of periodic structures that are formed on the surfaces with crystallographic orientation (111) (110) (100) and on planes, cut at an angle of 6° to the plane (100) and amorphous layers В2О3 deposited on the surface of silicon were presented. The results can be used to determine the crystallographic orientation of the semiconductor surface and express assessment of disorientation degree of crystal surface.


Author(s):  
Yuta Yanagisawa ◽  
Shigeki MATSUO

Abstract To study the formation mechanism of laser-induced periodic surface structures, we carried out a pulse-by-pulse optical observation of laser-induced surface morphological changes on thin glass substrates. We adopted oil-immersion microscopy, which has a higher spatial resolution than dry microscopy, and the laser was irradiated from the air side. A thin transparent substrate of coverslip was used as the sample. When a scratched coverslip was irradiated with focused subnanosecond laser pulses of 1.064 µm wavelength, periodic structures occasionally appeared in the flat region near the focus, with a period of about 0.55 μm.


1990 ◽  
Vol 56 (15) ◽  
pp. 1472-1474 ◽  
Author(s):  
C. Girault ◽  
D. Damiani ◽  
C. Champeaux ◽  
P. Marchet ◽  
J. P. Mercurio ◽  
...  

1982 ◽  
Vol 1 (1) ◽  
pp. 37-43 ◽  
Author(s):  
V. S. Antonov ◽  
V. S. Letokhov ◽  
Yu. A. Matveyets ◽  
A. N. Shibanov

This paper presents the results of observation of sputtering of neutral molecules and ions from the crystal adenine surface induced by fourth-harmonic Nd:YAG laser radiation with a pulse duration of 30 ps. The energy fluence of laser pulses was in the region (1–3) × 10−4 J/cm2. The kinetic energy distribution of the sputtered molecules spreads up to 0.7 eV. The experiment shows that the threshold of adenine molecular ion sputtering is connected with absorbed energy density in upper layers of the crystal surface but not by laser radiation intensity.


1999 ◽  
Vol 61 (1) ◽  
pp. 89-106 ◽  
Author(s):  
M. G. CADJAN ◽  
M. F. IVANOV

The Langevin approach to the kinetics of a collisional plasma is developed. Some collision models are considered, and the corresponding stochastic differential equations are derived. These equations can be regarded as an alternative to the description of a plasma in terms of a distribution function. The method developed here allows one to simulate plasma processes, taking account of both collective kinetics effects and Coulomb collisions. Results of the numerical simulation of the intervention of laser pulses with an overdense plasma are presented. The dependence of the absorption coefficient on the plasma parameters is calculated. The features of the plasma dynamics under the action of intense laser radiation are observed and discussed. The results of numerical tests of the validity of this method are also presented.


2012 ◽  
Vol 16 ◽  
pp. 15-20 ◽  
Author(s):  
Omid Tayefeh Ghalehbeygi ◽  
Vural Kara ◽  
Levent Trabzon ◽  
Selcuk Akturk ◽  
Huseyin Kizil

We fabricated Si Nano-columns by a femtosecond laser with various wavelengths and process parameters, whilst the specimen was submerged in water. The experiments were carried out by three types of wavelengths i.e. 1030 nm, 515nm, 343nm, with 500 fs laser pulses. The scales of these spikes are much smaller than micro spikes that are constructed by laser irradiation of silicon surface in vacuum or gases like SF6, Cl2. The Si nano-columns of 300 nm or less in width were characterized by SEM measurements. The formation of these Si Nano-columns that were revealed by SEM observation, indicates chemical etching with laser ablation occurred when surface exposed by laser beam. We observed 200 nm spikes height at the center of laser beam profile and the ones uniform in height at lateral incident area.


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