Optimization of (p)a-Si:H/p-Si ohmic contact for solar cells
2021 ◽
Vol 2086
(1)
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pp. 012088
Keyword(s):
Abstract In this work last results on optimization of (p)a-Si:H/p-Si ohmic contact made by PECVD method are presented. A strong effect of growth temperature and trimethylboron flow on charge carriers transport was demonstrated. An optimized (p)a-Si:H layer also was successfully applied as an emitter layer to a heterojunction solar cell fabrication where a measured open circuit voltage of 0.65 V was obtained.
2022 ◽
Keyword(s):
2021 ◽
Vol 34
(1)
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pp. 01-08
Keyword(s):
2019 ◽
Vol 7
(29)
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pp. 17324-17333
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Keyword(s):
Keyword(s):
2014 ◽
Vol 7
(6)
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pp. 1907-1912
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Keyword(s):
2015 ◽
Vol 8
(1)
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pp. 303-316
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2015 ◽
Vol 3
(4)
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pp. 1530-1539
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