scholarly journals Synthesis and studying properties of the GNPs@FexOy structure

2021 ◽  
Vol 2086 (1) ◽  
pp. 012132
Author(s):  
P G Bespalova ◽  
A A Vorobyev ◽  
A B Speshilova ◽  
V M Studzinsky ◽  
E A Patirimova ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Iron Oxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Sample Surface ◽  
Sem Analysis ◽  
Silicon Wafers ◽  
Thermal Deposition ◽  
Natural Oxide ◽  
Vacuum Thermal Deposition

Abstract An article presents a study of the regularities of the formation of gold up to 8 nm thick, deposited by vacuum thermal deposition on silicon wafers with a natural oxide, its annealing and subsequent deposition of iron oxide by chemical vapor deposition. The stages were accompanied by SEM analysis of the sample surface, as well as fixation of the optical and FTIR spectra, I–V characteristics of the obtained structures.

Silicon homoepitaxy using tantalum-filament hot-wire chemical vapor deposition

2005 ◽  
Vol 862 ◽  
Author(s):  
Charles W. Teplin ◽  
Eugene Iwaniczko ◽  
Kim M. Jones ◽  
Robert Reedy ◽  
Bobby To ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Secondary Ion Mass Spectrometry ◽  
Chemical Vapor ◽  
Silicon Wafers ◽  
Silicon Films ◽  
Hot Wire ◽  
Transmission Electron ◽  
Increasing Temperature

AbstractWe have studied silicon films grown epitaxially on silicon wafers using hot-wire chemical vapor deposition (HWCVD) with a tantalum filament. Silicon films were grown on (100)-oriented hydrogen terminated silicon wafers at temperatures from 175°C to 480°C, using a Ta filament 5 cm from the substrate to decompose pure SiH4 gas. The progression of epitaxy was monitored using real-time spectroscopic ellipsometry (RTSE). Analysis using RTSE, transmission electron microscopy (TEM), and scanning electron microscopy shows that at a characteristic thickness, hepi all of the films break down into a-Si:H cones. Below 380°C, both hepi and the thickness of the transition to pure a-Si:H increase with increasing temperature. Above 380°C, hepi was not observed to increase further but TEM images show fewer defects in the epitaxial regions. Secondary ion-mass spectrometry shows that the oxygen concentration remains nearly constant during growth (<1018 cm-3). The hydrogen concentration is found to increase substantially with film thickness from 5·1018 to 5·1019 cm-3, likely due to the incorporation of hydrogen into the a-Si:H cones that grow after the breakdown of epitaxy.

Epitaxial growth of 3C–SiC films on 4 in. diam (100) silicon wafers by atmospheric pressure chemical vapor deposition

1995 ◽  
Vol 78 (8) ◽  
pp. 5136-5138 ◽  
Author(s):  
Christian A. Zorman ◽  
Aaron J. Fleischman ◽  
Andrew S. Dewa ◽  
Mehran Mehregany ◽  
Chacko Jacob ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Silicon Wafers ◽  
Pressure Chemical ◽  
Sic Films

Selective Rapid Thermal Chemical Vapor Deposition of Titanium Silicide on Arsenic Implanted Silicon

1998 ◽  
Vol 514 ◽  
Author(s):  
Hua Fang ◽  
Mehmet C. Özttirk ◽  
Edmund G. Seebauer
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Substrate ◽  
Chemical Vapor ◽  
Silicon Wafers ◽  
Titanium Silicide ◽  
Experimental Results ◽  
Substrate Consumption ◽  
Thermal Chemical Vapor Deposition ◽  
Dose Levels

ABSTRACTThis work explores the effects of arsenic on rapid thermal chemical vapor deposition (RTCVD) of TiSi2. The films were deposited using TiCI4 and SiH4 on 100 mm oxide patterned silicon wafers selectively at temperatures ranging from 750°C to 850°C. Arsenic dose levels ranging from 3×1014 cm−2 to 5*times;1015 cm−2 at 50 keV were considered. Experimental results reveal that arsenic results in a resistance to TiSi2 nucleation and enhanced silicon substrate consumption. These effects are enhanced at higher arsenic dose levels and reduced at higher deposition temperatures. We propose an arsenic-surfacepassivation model to explain the effects.

Synthesis of Carbon Nanotubes from Silicalite-1-Coated Substrates

2012 ◽  
Vol 512-515 ◽  
pp. 275-279
Author(s):  
Wei Zhao ◽  
Ashish Pokhrel ◽  
Hyun Sung Kim ◽  
Hyung Tae Kim ◽  
Ik Jin Kim
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Carbon Nanotube ◽  
Iron Oxide ◽  
Vapor Deposition ◽  
Rf Sputtering ◽  
Chemical Vapor ◽  
Confined Spaces ◽  
Synthesis Of Carbon Nanotubes ◽  
Si Wafer

Assembled monolayer of silicalite-1 (AMS) microcrystals on Si wafer for carbon nanotube (CNT) growth has been prepared by the rubbing method. Iron oxide (α-Fe2O3, hematite) catalyst films were deposited onto silicate-1 monolayers from a Fe2O3 target by radio frequency (rf)-sputtering. This approach has the potential for producing well-aligned CNTs with controlled diameter from predesigned silicalite-1 templates by catalytic chemical vapor deposition (CCVD). Silicalite-1 monolayer oriented with faces parallel to Si wafer showed only the planes in the forms {0 k 0} lines at (020), (040), (060), (080) and (0100) by XRD. The formation and growth of CNTs by CCVD were achieved on the pores of silicate-1 crystals whereby the pores can be defined as confined spaces (channels, 5.60 Å) in nanometer dimensions acting as a template for a fine dispersion of well-defined Fe2O3 (10-15 nm) particles.

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