Measurement of the photon detection efficiency of silicon photomultipliers for the new detector cluster of the Cherenkov gamma-ray telescope TAIGA-IACT equipped with UV filters

Abstract This study was devoted to measurements of the UV-range photon detection efficiency (PDE) of OnSemi MicroFJ SiPM detectors use together with custom UV filters and of the transmission coefficient of these filters at 277 nm. The final goal of these measurements was to determine feasibility of the filters for the new detector cluster of the TAIGA-IACT telescope. PicoQuant PLS-270 UV source emitting pulses at 277 nm was calibrated. The obtained dependences of the registered radiation power on the distance between the emission source and the reference detector are well approximated by the inverse square function, hence no significant scattering or absorption influenced the PDE measurements. The dependences of the number of detected photons on the distance between the source and the detector were obtained. These dependencies are also well approximated by the inverse square function. The PDE of SiPM MicroFJ-60035 detector was measured at the level of 10.0 ± 0.7%. The transmission coefficients of the considered set of filters at the wavelength of 277 nm were also obtained. The SL 240-300 filter has a sufficiently high transmission coefficient and it is advisable to use it as a bandpass ultraviolet filter in the new detector cluster of the TAIGA-IACT telescope; the SL 290-590 filter absorbs ultraviolet light quite well and is applicable in the visible range.

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Investigation of parameters of new MAPD-3NM silicon photomultipliers

Journal of Instrumentation ◽

10.1088/1748-0221/17/01/c01001 ◽

2022 ◽

Vol 17 (01) ◽

pp. C01001

Author(s):

F. Ahmadov ◽

G. Ahmadov ◽

R. Akbarov ◽

A. Aktag ◽

E. Budak ◽

...

Keyword(s):

High Energy Physics ◽

Gamma Ray ◽

Detection Efficiency ◽

High Energy ◽

Efficiency Gain ◽

Space Application ◽

Silicon Photomultipliers ◽

Photon Detection ◽

Photon Detection Efficiency ◽

Energy Physics

Abstract In the presented work, the parameters of a new MAPD-3NM-II photodiode with buried pixel structure manufactured in cooperation with Zecotek Company are investigated. The photon detection efficiency, gain, capacitance and gamma-ray detection performance of photodiodes are studied. The SPECTRIG MAPD is used to measure the parameters of the MAPD-3NM-II and scintillation detector based on it. The obtained results show that the newly developed MAPD-3NM-II photodiode outperforms its counterparts in most parameters and it can be successfully applied in space application, medicine, high-energy physics and security.

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Low Dark Count Rate and High Single Photon Detection Efficiency Avalanche Photodiode in Geiger-mode Operation

2006 64th Device Research Conference ◽

10.1109/drc.2006.305099 ◽

2006 ◽

Cited By ~ 3

Author(s):

Mingguo Liu ◽

Xiaogang Bai ◽

Chong Hu ◽

Xiangyi Guo ◽

Joe Campbell ◽

...

Keyword(s):

Count Rate ◽

Detection Efficiency ◽

Single Photon ◽

Avalanche Photodiode ◽

Single Photon Detection ◽

Dark Count ◽

Photon Detection ◽

Dark Count Rate ◽

Geiger Mode ◽

Photon Detection Efficiency

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Design, Fabrication, and Verification of Blue-Extended Single-Photon Avalanche Diode with Low Dark Count Rate and High Photon Detection Efficiency

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2021.2975 ◽

2021 ◽

Vol 16 (4) ◽

pp. 546-551

Author(s):

Mei-Ling Zeng ◽

Yang Wang ◽

Xiang-Liang Jin ◽

Yan Peng ◽

Jun Luo

Keyword(s):

Bias Voltage ◽

Spectral Range ◽

Count Rate ◽

Detection Efficiency ◽

Single Photon ◽

Dark Count ◽

Photon Detection ◽

Avalanche Diode ◽

Dark Count Rate ◽

Photon Detection Efficiency

Single-photon avalanche diodes (SPADs) can detect extremely weak optical signals and are mostly used in single-photon imaging, quantum communication, medical detection, and other fields. In this paper, a low dark count rate (DCR) single-photon avalanche diode device is designed based on the 180 nm standard BCD process. The device has a good response in the 450~750 nm spectral range. The active area of the device adopts a P+/N-Well structure with a diameter of 20 µm. The low-doped N-Well increases the thickness of the depletion region and can effectively improve the detection sensitivity; the P-Well acts as a guard ring to prevent premature breakdown of the PN junction edge; the isolation effect of the deep N-Well reduces the noise coupling of the substrate. Use the TCAD simulation tool to verify the SPAD’s basic principles. The experimental test results show that the avalanche breakdown voltage of the device is 11.7 V. The dark count rate is only 123 Hz when the over-bias voltage is 1 V, and the peak photon detection efficiency (PDE) reaches 37.5% at the wavelength of 500 nm under the 0.5 V over-bias voltage. PDE exceeds 30% in the range of 460~640 nm spectral range, which has a good response in the blue band. The SPAD device provides certain design ideas for the research of fluorescence detectors.

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Using quantum entangled photons to measure the absolute photon detection efficiency of a multi-pixel SiPM array

Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ◽

10.1016/j.nima.2019.05.008 ◽

2020 ◽

Vol 958 ◽

pp. 162167

Author(s):

J.O.D. Williams ◽

J.S. Lapington ◽

S.A. Leach ◽

C. Duffy

Keyword(s):

Detection Efficiency ◽

Entangled Photons ◽

Photon Detection ◽

Photon Detection Efficiency ◽

The Absolute

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High photon detection efficiency single photon avalanche diode in 0.18 μm standard CMOS process

Modern Physics Letters B ◽

10.1142/s0217984917501937 ◽

2017 ◽

Vol 31 (17) ◽

pp. 1750193 ◽

Cited By ~ 1

Author(s):

Wei Wang ◽

Xiaoyuan Bao ◽

Li Chen ◽

Ting Chen ◽

Guanyu Wang ◽

...

Keyword(s):

Breakdown Voltage ◽

Bias Voltage ◽

Detection Efficiency ◽

Single Photon ◽

Cmos Process ◽

Guard Ring ◽

Reverse Bias Voltage ◽

Photon Detection ◽

Standard Cmos Process ◽

Photon Detection Efficiency

This paper proposed a single photon avalanche diodes (SPADs) designed with 0.18 [Formula: see text] standard CMOS process. One of the major challenges in CMOS SPADs is how to raise the low photon detection efficiency (PDE). In this paper, the device structure and process parameters of the CMOS SPAD are optimized so as to improve PDE properties which have been investigated in detail. The CMOS SPADs are designed in p+/n-well/deep n-well (DNW) structure with the p-sub and the p-well guard ring (GR). The simulation results show that with the p-well GR, the quantum efficiency (QE) is about 80% with the breakdown voltage of 12.7 V, the unit responsivity is as high as 0.38 A/W and the PDE of 51% and 53% is obtained when the excess bias is at 1 V and 2 V, respectively. The dark count rate (DCR) is 6.2 kHz when bias voltage is 14 V. With the p-sub GR, the breakdown voltage is 13 V, the unit responsivity is up to 0.26 A/W, the QE is 58%, the PDE is 33% and 37% at excess bias of 1 V and 2 V, respectively. The DCR is 3.4 kHz at reverse bias voltage of 14 V.

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