scholarly journals Effective cooling of substrates with low thermal conductivity under conditions of gas-jet MPCVD diamond synthesis

2021 ◽  
Vol 2119 (1) ◽  
pp. 012119
Author(s):  
A A Emelyanov ◽  
M Yu Plotnikov ◽  
N I Timoshenko ◽  
I B Yudin
Keyword(s):  
Thermal Conductivity ◽  
Experimental Study ◽  
Silicon Substrate ◽  
Microwave Discharge ◽  
Heat Removal ◽  
Gas Jet ◽  
Silicon Substrates ◽  
Diamond Synthesis ◽  
Substrate Holder ◽  
Gas Jet Deposition

Abstract The paper presents the results of an experimental study of heating molybdenum and silicon substrates under the conditions of gas-jet deposition of diamond structures using the precursor gases of a microwave discharge to activate. A cooled substrate holder using a metal melt to improve heat removal by reducing the thermal resistance between the substrate and the substrate holder has been developed. The use of the melt allowed lowering the temperature of the silicon substrate under the conditions of gas-jet deposition to a level that ensures the preservation of its structure. The developed substrate holders were used to carry out gas-jet synthesis of diamond structures on molybdenum and silicon substrates.

scholarly journals Features of Electrophysical Diagnostics of Schottky Field Transistors Based on GaAs Epitaxial Layers on Silicon Substrates for Microsystem Applications

2019 ◽  
Vol 20 (3) ◽  
pp. 311-317
Author(s):  
S.P. Novosiadly ◽  
T.H. Benko ◽  
I.T. Kogut
Keyword(s):  
Thermal Conductivity ◽  
Thermal Resistance ◽  
Silicon Substrate ◽  
High Speed ◽  
Epitaxial Layers ◽  
Silicon Substrates ◽  
Local Integration ◽  
Soi Technology

In this paper, the structure of GaAs FET on a silicon substrate, suitable for local integration in the local SOI technology and the method of its electrophysical diagnostics based on changes in the thermal resistance (RT), is analyzed. It is known that the thermal conductivity of GaAs is 3-4 times worse than silicon. To eliminate this disadvantage, the technology of forming high-speed GaAs-structures on the surface of the silicon substrate was propoused.

scholarly journals An experimental study of the motion of ice past obstacles by the process of regelation

1976 ◽  
Vol 17 (75) ◽  
pp. 79-98 ◽  
Author(s):  
E. M. Morris
Keyword(s):  
Thermal Conductivity ◽  
Experimental Study ◽  
Cross Sections ◽  
Transition Point ◽  
Water Layer ◽  
Single Object ◽  
Two Systems ◽  
Basal Sliding

AbstractThe results of regelation experiments, in which a single object is pulled through ice, cannot be applied directly to the problem of basal sliding in glaciers because the two systems have different geometries. When the force applied to a single object is small, impurities trapped in the regelation water-layer around the object inhibit the regelation process. At larger forces, above the Drake-Shreve transition point, impurities are shed in a trace behind the object. However, when ice moves over a series of obstacles a trace may exist above and below the transition point. The regelation velocity below the transition point is not reduced by the effect of trapped impurities. In an experiment in which brass cylingerrs of various cross-sections rotate in ice, the ratio between the expected regelation velocity, calculated using the basal-sliding theory of Nye, and the measured regelation velocity is 8±2, both above and below the transition point. The same ratio has been obtained by other workers with wires of similar thermal conductivity above the transition point. Measurements of température differences indicate that supercooling cannot be the main source of the unexpectedly low regelation velocities above the transition point.

scholarly journals Binary Self-Assembly of Nanocolloidal Arrays using Concurrent and Sequential Spin Coating Techniques

Materials ◽  
2021 ◽  
Vol 14 (2) ◽  
pp. 274
Author(s):  
Shih-Jyun Shen ◽  
Demei Lee ◽  
Yu-Chen Wu ◽  
Shih-Jung Liu
Keyword(s):  
Silicon Substrate ◽  
Self Assembly ◽  
Spin Coating ◽  
Processing Parameters ◽  
The Self ◽  
Silicon Substrates ◽  
Processing Conditions ◽  
Polystyrene Spheres ◽  
Optimal Processing ◽  
Spin Coater

This paper reports the binary colloid assembly of nanospheres using spin coating techniques. Polystyrene spheres with sizes of 900 and 100 nm were assembled on top of silicon substrates utilizing a spin coater. Two different spin coating processes, namely concurrent and sequential coatings, were employed. For the concurrent spin coating, 900 and 100 nm colloidal nanospheres of latex were first mixed and then simultaneously spin coated onto the silicon substrate. On the other hand, the sequential coating process first created a monolayer of a 900 nm nanosphere array on the silicon substrate, followed by the spin coating of another layer of a 100 nm colloidal array on top of the 900 nm array. The influence of the processing parameters, including the type of surfactant, spin speed, and spin time, on the self-assembly of the binary colloidal array were explored. The empirical outcomes show that by employing the optimal processing conditions, binary colloidal arrays can be achieved by both the concurrent and sequential spin coating processes.

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