scholarly journals The built-in electric field in P-HEMT heterostructures with near-surface quantum wells AlxGa1−xAs/InyGa1−yAs/GaAs

2012 ◽  
Vol 345 ◽  
pp. 012015 ◽  
Author(s):  
R A Khabibullin ◽  
I S Vasil'evskii ◽  
D S Ponomarev ◽  
G B Galiev ◽  
E A Klimov ◽  
...  
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Near Surface

scholarly journals Contribution of top barrier materials to high mobility in near-surface InAs quantum wells grown on GaSb(001)

2019 ◽  
Vol 3 (1) ◽  
Author(s):  
Joon Sue Lee ◽  
Borzoyeh Shojaei ◽  
Mihir Pendharkar ◽  
Mayer Feldman ◽  
Kunal Mukherjee ◽  
...  
Keyword(s):  
Quantum Wells ◽  
High Mobility ◽  
Near Surface ◽  
Barrier Materials

scholarly journals Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength

2019 ◽  
Vol 58 (SC) ◽  
pp. SCCB09 ◽  
Author(s):  
George M. Christian ◽  
Stefan Schulz ◽  
Simon Hammersley ◽  
Menno J. Kappers ◽  
Martin Frentrup ◽  
...  
Keyword(s):  
Optical Properties ◽  
Field Strength ◽  
Electric Field ◽  
Quantum Wells ◽  
Electric Field Strength ◽  
Single Quantum ◽  
Total Electric Field

Intersubband radiation in weakly bound superlattice structures with wide quantum wells in a transverse electric field

2007 ◽  
Vol 34 (7) ◽  
pp. 189-193
Author(s):  
N. V. Dyakonova ◽  
O. A. Klimenko ◽  
W. Knap ◽  
Ya. A. Mityagin ◽  
V. N. Murzin ◽  
...  
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Transverse Electric ◽  
Transverse Electric Field ◽  
Weakly Bound ◽  
Superlattice Structures

45° REFLECTOMETRY OF SEMICONDUCTOR QUANTUM WELLS

2001 ◽  
Vol 15 (17n19) ◽  
pp. 683-687
Author(s):  
A. SILVA-CASTILLO ◽  
F. PEREZ-RODRIGUEZ
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Growth Direction ◽  
Angle Of Incidence ◽  
Near Surface ◽  
New Information ◽  
Difference Formula ◽  
Exciton Polaritons ◽  
The Difference ◽  
First Time

We have applied the 45° reflectometry for the first time to study exciton-polaritons in quantum wells. The 45° reflectometry is a new polarization-modulation technique, which is based on the measurement of the difference [Formula: see text] between the p-polarization reflectivity (Rp) and the squared s-polarization reflectivity [Formula: see text] at an angle of incidence of 45°. We show that [Formula: see text] spectra may provide qualitatively new information on the exciton-polariton modes in a quantum well. These optical spectra turn out to be very sensitive to the zeros of the dielectric function along the quantum-well growth direction and, therefore, allow to identify the resonances associated with the Z exciton-polariton mode. We demonstrate that 45° reflectometry could be a powerful tool for studying Z exciton-polariton modes in near-surface quantum wells, which are difficult to observe in simple spectra of reflectivity Rp

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