MOCVD approach to perovskite based thin films: From high Tcsuperconductors to giant dielectric constant materials

2010 ◽  
Vol 8 ◽  
pp. 012005 ◽  
Author(s):  
G Malandrino ◽  
R G Toro ◽  
R Lo Nigro ◽  
I L Fragalà
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Giant Dielectric ◽  
Giant Dielectric Constant

scholarly journals Giant Dielectric Constant of Copper Nanowires/Amorphous SiO2 Composite Thin Films for Supercapacitor Application

ACS Omega ◽  
2020 ◽  
Vol 5 (21) ◽  
pp. 12421-12430
Author(s):  
Anupam Maity ◽  
Subha Samanta ◽  
Shubham Roy ◽  
Debasish Biswas ◽  
Dipankar Chakravorty
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Copper Nanowires ◽  
Amorphous Sio2 ◽  
Composite Thin Films ◽  
Supercapacitor Application ◽  
Giant Dielectric ◽  
Giant Dielectric Constant

scholarly journals Epitaxial thin films of the giant-dielectric-constant material CaCu3Ti4O12 grown by pulsed-laser deposition

2002 ◽  
Vol 81 (11) ◽  
pp. 2056-2058 ◽  
Author(s):  
W. Si ◽  
E. M. Cruz ◽  
P. D. Johnson ◽  
P. W. Barnes ◽  
P. Woodward ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Epitaxial Thin Films ◽  
Giant Dielectric ◽  
Giant Dielectric Constant

scholarly journals Approaching subthreshold-swing limit for thin-film transistors by using a giant-dielectric-constant gate dielectric

RSC Advances ◽  
2019 ◽  
Vol 9 (46) ◽  
pp. 27117-27124
Author(s):  
Zhuo Chen ◽  
Linfeng Lan ◽  
Junbiao Peng
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Rf Sputtering ◽  
Subthreshold Swing ◽  
Giant Dielectric ◽  
Giant Dielectric Constant

Low-temperature giant-dielectric-constant thin films (In0.0025Nb0.0025Ti0.995O2) fabricated with RF sputtering are employed as the dielectrics for IZO-TFTs.

scholarly journals Transport and Dielectric Properties of Mechanosynthesized La2/3Cu3Ti4O12 Ceramics

Crystals ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 313
Author(s):  
Mohamad M. Ahmad ◽  
Hicham Mahfoz Kotb ◽  
Celin Joseph ◽  
Shalendra Kumar ◽  
Adil Alshoaibi
Keyword(s):  
Dielectric Constant ◽  
Sintering Temperature ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
Boundary Conductivity ◽  
X Ray ◽  
Giant Dielectric ◽  
Mechanochemical Milling ◽  
Giant Dielectric Constant ◽  
Lower Temperature

La2/3Cu3Ti4O12 (LCTO) powder has been synthesized by the mechanochemical milling technique. The pelletized powder was conventionally sintered for 10 h at a temperature range of 975–1025 °C, which is a lower temperature process compared to the standard solid-state reaction. X-ray diffraction analysis revealed a cubic phase for the current LCTO ceramics. The grain size of the sintered ceramics was found to increase from 1.5 ± 0.5 to 2.3 ± 0.5 μm with an increase in sintering temperature from 975 to 1025 °C. The impedance results show that the grain conductivity is more than three orders of magnitude larger than the grain boundary conductivity for LCTO ceramics. All the samples showed a giant dielectric constant (1.7 × 103–3.4 × 103) and dielectric loss (0.09–0.17) at 300 K and 10 kHz. The giant dielectric constant of the current samples was attributed to the effect of internal barrier layer capacitances due to their electrically inhomogeneous structure.

Ba0.4Sr0.6(Fe0.5Nb0.5)O3 ceramics with extended giant dielectric constant step and reduced dielectric loss

2014 ◽  
Vol 586 ◽  
pp. 420-425 ◽  
Author(s):  
Zhuo Wang ◽  
Liang Liang Zhang ◽  
Yong Ping Pu
Keyword(s):  
Dielectric Constant ◽  
Dielectric Loss ◽  
Giant Dielectric ◽  
Giant Dielectric Constant

scholarly journals Colossal dielectric constant of NaNbO3 doped BaTiO3 ceramics

2016 ◽  
Vol 34 (2) ◽  
pp. 322-329 ◽  
Author(s):  
Wan Q. Cao ◽  
Ling F. Xu ◽  
Mukhlis M. Ismail ◽  
Li L. Huang
Keyword(s):  
Dielectric Constant ◽  
Dielectric Loss ◽  
Traditional Approach ◽  
Temperature Stability ◽  
Bound State ◽  
High Energy ◽  
Low Dielectric ◽  
Giant Dielectric ◽  
Giant Dielectric Constant ◽  
High Dielectric

AbstractBaTiO3 ceramics doped with 0.40 mol% NaNbO3 were prepared using a traditional approach by sintering at temperature of 1250 °C to 1290 °C. The prepared ceramics was characterized by very good dielectric properties, such as high dielectric constant (1.5 × 105), low dielectric loss (0.1), and good dielectric temperature stability in the −40 °C to 100 °C range for the sample sintered below 1270 °C. The dielectric characteristics obtained with XPS confirmed that Ti4+ ions remain in the state without any change. The huge increase in dielectric constant in NaNbO3 doped BaTiO3 samples occurs when large amount of Ba2+ ions are excited to a high energy bound state of Ba2+ − e or Ba+ to create electron hopping conduction. For samples with the content of NaNbO3 higher than 0.40 mol%, or sintering temperature higher than 1280 °C, compensation effect is dominated by cation vacancies with sharply decreasing dielectric constant and increased dielectric loss. The polaron effect is used to explain the relevant mechanism of giant dielectric constant appearing in the ferroelectric phase.

Giant dielectric constant in TiO2/Al2O3nanolaminates grown on doped silicon substrate by pulsed laser deposition

2014 ◽  
Vol 115 (9) ◽  
pp. 094103 ◽  
Author(s):  
P. Walke ◽  
R. Bouregba ◽  
A. Lefevre ◽  
G. Parat ◽  
F. Lallemand ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Pulsed Laser Deposition ◽  
Silicon Substrate ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Giant Dielectric ◽  
Doped Silicon ◽  
Giant Dielectric Constant

Giant dielectric constant and high-temperature dielectric relaxation properties in La-doped SrTiO3 ceramics

2020 ◽  
pp. 2150046
Author(s):  
Tianyang Liu ◽  
Xiaofei Wang ◽  
Congcong Li ◽  
Bowen Shen ◽  
Mingyan Yao ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
High Temperature ◽  
Temperature Region ◽  
Relaxation Processes ◽  
Doping Amount ◽  
Solid State Method ◽  
Giant Dielectric ◽  
Region I ◽  
Giant Dielectric Constant ◽  
Region Ii

[Formula: see text] (SLTO) ceramics ([Formula: see text] = 0.05, 0.10, 0.15) were prepared with giant dielectric constant by the traditional solid-state method at 1350[Formula: see text]C. The temperature dependence of the dielectric constant was obtained at the temperature ranging from 29[Formula: see text]C to 500[Formula: see text]C and the frequency ranging from 2 kHz to 2 MHz. Two sets of relaxation peaks appear in the low temperature (region I) and the high temperature (region II), respectively. For region I, we conclude that the relaxation behavior is related to the oxygen vacancy migration. For region II, the two relaxation processes are caused by grain boundary for high frequency and Sr or Ti defects at grain interior for low frequency. With the doping amount reaching 0.15, the relaxation peaks disappear and become a common phase transition because of the aggravation of lattice distortion. These possible physical mechanisms of two sets of relaxation peaks are briefly discussed.

Temperature evolution of (quinuclidinium)[FeCl4]: a plastic/polar magnetic hybrid compound with a giant dielectric constant

2020 ◽  
Vol 8 (33) ◽  
pp. 11389-11398
Author(s):  
Palmerina González-Izquierdo ◽  
Oscar Fabelo ◽  
Laura Canadillas-Delgado ◽  
Garikoitz Beobide ◽  
Oriol Vallcorba ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Phase Transitions ◽  
Physical Properties ◽  
Temperature Evolution ◽  
Hybrid Compound ◽  
Giant Dielectric ◽  
Giant Dielectric Constant

The temperature evolution of (quinuclidinium)[FeCl4] shows the occurrence of an intricate series of phase transitions, involving notable modifications on the physical properties.

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