scholarly journals High optical quality of MoS 2 monolayers grown by chemical vapor deposition

2D Materials ◽  
2019 ◽  
Vol 7 (1) ◽  
pp. 015011 ◽  
Author(s):  
Shivangi Shree ◽  
Antony George ◽  
Tibor Lehnert ◽  
Christof Neumann ◽  
Meryem Benelajla ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Optical Quality ◽  
High Optical Quality

Van Der Waals Hybrid Perovskite of High Optical Quality by Chemical Vapor Deposition

2017 ◽  
Vol 5 (21) ◽  
pp. 1700373 ◽  
Author(s):  
Zhizhong Chen ◽  
Yiping Wang ◽  
Xin Sun ◽  
Yuwei Guo ◽  
Yang Hu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Van Der Waals ◽  
Chemical Vapor ◽  
Optical Quality ◽  
High Optical Quality ◽  
Hybrid Perovskite

High optical quality multicarat single crystal diamond produced by chemical vapor deposition

2011 ◽  
Vol 209 (1) ◽  
pp. 101-104 ◽  
Author(s):  
Yu-fei Meng ◽  
Chih-shiue Yan ◽  
Szczesny Krasnicki ◽  
Qi Liang ◽  
Joseph Lai ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Optical Quality ◽  
High Optical Quality ◽  
Single Crystal Diamond

Self-Assembled Growth of Tail-Like Cluster Composed of Flower-Shaped ZnO Microwires by Chemical Vapor Deposition Method

2018 ◽  
Vol 279 ◽  
pp. 202-207
Author(s):  
De Chao Yang ◽  
Yu Qiu ◽  
Bo Wu ◽  
Jing Qian Luo ◽  
Zhi Yu Huang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Cross Sections ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Green Emission ◽  
Optical Quality ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method ◽  
High Optical Quality ◽  
Self Assembled

A self-assembled ZnO tail-like cluster (TC) had been successfully synthesized by a simple chemical vapor deposition method. Scanning electron microscopy observations show that ZnO TC is composed of bushy ZnO microwires with flower-shaped cross sections. Long and narrow furrows can be clearly observed on the surface of the ZnO TC. A possible growth model is proposed to discuss the formation mechanism. The analytical result indicates that the flower-shaped ZnO microwires are formed by the lateral coalescence of ZnO wires at high temperature. The room temperature PL spectrum shows a prominent UV emission band around 380 nm, and no green emission is found, implying that the unique flower-shaped ZnO microwires have high optical quality. This controlled growth of ZnO TC may have implication for potential applications in novel optoelectronic micro/nanodevices in the near future.

Experimental Study of the Effect of Precursor Composition On the Microstructure of Gallium Nitride Thin Films Grown by the MOCVD Process

2021 ◽  
Author(s):  
Omar D. Jumaah ◽  
Yogesh Jaluria
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Transport Processes ◽  
Carrier Gas ◽  
Precursor Composition

Abstract Chemical vapor deposition (CVD) is a widely used manufacturing process for obtaining thin films of materials like silicon, silicon carbide, graphene and gallium nitride that are employed in the fabrication of electronic and optical devices. Gallium nitride (GaN) thin films are attractive materials for manufacturing optoelectronic device applications due to their wide band gap and superb optoelectronic performance. The reliability and durability of the devices depend on the quality of the thin films. The metal-organic chemical vapor deposition (MOCVD) process is a common technique used to fabricate high-quality GaN thin films. The deposition rate and uniformity of thin films are determined by the thermal transport processes and chemical reactions occurring in the reactor, and are manipulated by controlling the operating conditions and the reactor geometrical configuration. In this study, the epitaxial growth of GaN thin films on sapphire (AL2O3) substrates is carried out in two commercial MOCVD systems. This paper focuses on the composition of the precursor and the carrier gases, since earlier studies have shown the importance of precursor composition. The results show that the flow rate of trimethylgallium (TMG), which is the main ingredient in the process, has a significant effect on the deposition rate and uniformity of the films. Also the carrier gas plays an important role in deposition rate and uniformity. Thus, the use of an appropriate mixture of hydrogen and nitrogen as the carrier gas can improve the deposition rate and quality of GaN thin films.

The Cooling Rate Effect on Graphene Synthesis Using Low Pressure Chemical Vapor Deposition

2021 ◽  
Author(s):  
Byoungdo Lee ◽  
Weishen Chu ◽  
Wei Li
Keyword(s):  
Chemical Vapor Deposition ◽  
Reaction Time ◽  
Carbon Source ◽  
Cooling Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Feeding Time ◽  
Process Variables ◽  
Pressure Chemical

Abstract Low-pressure chemical vapor deposition (LPCVD) is the most efficient method to synthesize large-scale, high-quality graphene for many potential applications such as flexible electronics, solar cells, and separation membranes. The quality of LPCVD is affected by process variables including methane/hydrogen (CH4/H2) ratio, time, pressure, temperature, and cooling rate. The cooling rate has been recognized as one of the most important process variables affecting the amount of carbon source, nucleation, reaction time, and thus the quality of the LPCVD. In this research, we investigate the effect of cooling rate on the quality of graphene synthesize by changing the cooling rate and the gas feeding time. Graphene coverage is measured by Raman mapping. It is found that fast cooling rate leads to decreased carbon source reaction time, which in turn results in higher coverage by monolayer graphene. The temperature-dependent gas feeding time corresponding to different cooling rates can be used to properly supply the carbon source onto the copper surface, also leading to a higher graphene coverage.

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