Impact of domain disorder on optoelectronic properties of layered semimetal MoTe2

2D Materials ◽  
2021 ◽  
Author(s):  
Maanwinder P. Singh ◽  
Jonas Kiemle ◽  
Ilkay Ozdemir ◽  
Philipp Zimmermann ◽  
Takashi Taniguchi ◽  
...  
Keyword(s):  
Van Der Waals ◽  
Topological Type ◽  
Optoelectronic Properties ◽  
Local Domain ◽  
Type Ii ◽  
Relaxation Dynamics ◽  
Weyl Semimetal ◽  
Ultrafast Relaxation ◽  
Low Dimensional ◽  
The Impact

Abstract We address the impact of crystal phase disorder on the generation of helicity-dependent photocurrents in layered MoTe2, which is one of the van der Waals materials to realize the topological type-II Weyl semimetal phase. Using scanning photocurrent microscopy, we spatially probe the phase transition and its hysteresis between the centrosymmetric, monoclinic 1T’ phase to the symmetry-broken, orthorhombic Td phase as a function of temperature. We find a highly disordered photocurrent response in the intermediate temperature regime. Moreover, we demonstrate that helicity-dependent and ultrafast photocurrents in MoTe2 arise most likely from a local breaking of the electronic symmetries. Our results highlight the prospects of local domain morphologies and ultrafast relaxation dynamics on the optoelectronic properties of low-dimensional van der Waals circuits.

scholarly journals Evidence for topological type-II Weyl semimetal WTe2

2017 ◽  
Vol 8 (1) ◽  
Author(s):  
Peng Li ◽  
Yan Wen ◽  
Xin He ◽  
Qiang Zhang ◽  
Chuan Xia ◽  
...  
Keyword(s):  
Topological Type ◽  
Type Ii ◽  
Weyl Semimetal

Photoluminescence enhancement and ultrafast relaxation dynamics in a low-dimensional heterostructure: effect of plasmon–exciton coupling

2018 ◽  
Vol 43 (24) ◽  
pp. 6093 ◽  
Author(s):  
Runlin Miao ◽  
Yiwen Zhang ◽  
Yuxiang Tang ◽  
Jie You ◽  
Yanbin Zhang ◽  
...  
Keyword(s):  
Relaxation Dynamics ◽  
Exciton Coupling ◽  
Ultrafast Relaxation ◽  
Photoluminescence Enhancement ◽  
Low Dimensional

scholarly journals Positive Magnetoresistance and Chiral Anomaly in Exfoliated Type-II Weyl Semimetal Td-WTe2

Nanomaterials ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 2755
Author(s):  
Rajdeep Adhikari ◽  
Soma Adhikari ◽  
Bogdan Faina ◽  
Marc Terschanski ◽  
Sophie Bork ◽  
...  
Keyword(s):  
Fermi Liquid ◽  
Topological Type ◽  
No Oxidation ◽  
Chiral Anomaly ◽  
Type Ii ◽  
Positive Magnetoresistance ◽  
Force Microscopy ◽  
Optical Reflectivity ◽  
Weyl Semimetal ◽  
Electric And Magnetic Fields

Layered van der Waals semimetallic Td-WTe2, exhibiting intriguing properties which include non-saturating extreme positive magnetoresistance (MR) and tunable chiral anomaly, has emerged as a model topological type-II Weyl semimetal system. Here, ∼45 nm thick mechanically exfoliated flakes of Td-WTe2 are studied via atomic force microscopy, Raman spectroscopy, low-T/high-μ0H magnetotransport measurements and optical reflectivity. The contribution of anisotropy of the Fermi liquid state to the origin of the large positive transverse MR⊥ and the signature of chiral anomaly of the type-II Weyl Fermions are reported. The samples are found to be stable in air and no oxidation or degradation of the electronic properties is observed. A transverse MR⊥∼1200 % and an average carrier mobility of 5000 cm2V−1s−1 at T=5K for an applied perpendicular field μ0H⊥=7T are established. The system follows a Fermi liquid model for T≤50K and the anisotropy of the Fermi surface is concluded to be at the origin of the observed positive MR. Optical reflectivity measurements confirm the anisotropy of the electronic behaviour. The relative orientation of the crystal axes and of the applied electric and magnetic fields is proven to determine the observed chiral anomaly in the in-plane magnetotransport. The observed chiral anomaly in the WTe2 flakes is found to persist up to T=120K, a temperature at least four times higher than the ones reported to date.

Optoelectronic properties of type-II SePtTe/InS van der Waals heterojunction

2020 ◽  
Vol 128 (4) ◽  
pp. 043103
Author(s):  
Jialuo Ren ◽  
Chunxiao Zhang ◽  
Chaoyu He ◽  
Tao Ouyang ◽  
Jin Li ◽  
...  
Keyword(s):  
Van Der Waals ◽  
Optoelectronic Properties ◽  
Type Ii

scholarly journals First-principles study on optoelectronic properties of Cs2PbX4–PtSe2 van der Waals heterostructures

RSC Advances ◽  
2022 ◽  
Vol 12 (4) ◽  
pp. 2292-2299
Author(s):  
Xue Li ◽  
Liyuan Wu ◽  
Shuying Cheng ◽  
Changcheng Chen ◽  
Pengfei Lu
Keyword(s):  
Energy Level ◽  
First Principles ◽  
Van Der Waals ◽  
Optoelectronic Properties ◽  
Type Ii ◽  
Van Der Waals Heterostructures ◽  
First Principles Study

Energy level graphs of the monolayer PtSe2 and Cs2PbX4 in the (a) precontact and (b) contact. The Cs2PbBr4–PtSe2 heterostructure has a type-II level alignment which is conducive to spontaneously driving the holes and electrons to move forward in opposite directions.

scholarly journals Interlayer dielectric function of a type-II van der Waals semiconductor: The HfS2/PtS2 heterobilayer

2019 ◽  
Vol 3 (12) ◽  
Author(s):  
Stefana Anais Colibaba ◽  
Sabine Körbel ◽  
Carlo Motta ◽  
Fedwa El-Mellouhi ◽  
Stefano Sanvito
Keyword(s):  
Dielectric Function ◽  
Van Der Waals ◽  
Type Ii ◽  
Interlayer Dielectric

The effect of hydrogen bonds on the ultrafast relaxation dynamics of a BODIPY dimer

2021 ◽  
Vol 154 (8) ◽  
pp. 084201
Author(s):  
Elisa Fresch ◽  
Nicola Peruffo ◽  
Mariachiara Trapani ◽  
Massimiliano Cordaro ◽  
Giovanni Bella ◽  
...  
Keyword(s):  
Hydrogen Bonds ◽  
Relaxation Dynamics ◽  
Ultrafast Relaxation

A first-principles study on the electronic and optical properties of a type-II C2N/g-ZnO van der Waals heterostructure

2021 ◽  
Vol 23 (6) ◽  
pp. 3963-3973
Author(s):  
Jianxun Song ◽  
Hua Zheng ◽  
Minxia Liu ◽  
Geng Zhang ◽  
Dongxiong Ling ◽  
...  
Keyword(s):  
Optical Properties ◽  
Dft Calculations ◽  
First Principles ◽  
Van Der Waals ◽  
Band Alignment ◽  
Type Ii ◽  
Electronic And Optical Properties ◽  
Direct Bandgap ◽  
Van Der Waals Heterostructure ◽  
Vdw Heterostructure

The structural, electronic and optical properties of a new vdW heterostructure, C2N/g-ZnO, with an intrinsic type-II band alignment and a direct bandgap of 0.89 eV at the Γ point are extensively studied by DFT calculations.

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