Interlayer dielectric function of a type-II van der Waals semiconductor: The 
HfS2/PtS2
 heterobilayer

The structural, electronic and optical properties of a new vdW heterostructure, C2N/g-ZnO, with an intrinsic type-II band alignment and a direct bandgap of 0.89 eV at the Γ point are extensively studied by DFT calculations.

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A type-II WSe2/HfSe2 van der Waals heterostructure with adjustable electronic and optical properties

Results in Physics ◽

10.1016/j.rinp.2021.104250 ◽

2021 ◽

pp. 104250

Author(s):

Weiwei Ju ◽

Yi Zhang ◽

Tongwei Li ◽

Donghui Wang ◽

Enqin Zhao ◽

...

Keyword(s):

Optical Properties ◽

Van Der Waals ◽

Type Ii ◽

Electronic And Optical Properties ◽

Van Der Waals Heterostructure

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Tunable electronic properties of two-dimensional type-I 1T-SN2/hBN and type-II 1T-XN2/hBN (X = Se, Te) van der Waals heterostructures from first-principle study

Applied Surface Science ◽

10.1016/j.apsusc.2020.148659 ◽

2021 ◽

Vol 542 ◽

pp. 148659

Author(s):

Xiang-Yue Liu ◽

Hua-Dong Zeng ◽

Hong Zhang ◽

Xin-Lu Cheng

Keyword(s):

Electronic Properties ◽

Van Der Waals ◽

Type I ◽

First Principle ◽

Type Ii ◽

Two Dimensional ◽

Van Der Waals Heterostructures

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Vertical strain and electric field tunable electronic properties of type-II band alignment C2N/InSe van der Waals heterostructure

Chemical Physics Letters ◽

10.1016/j.cplett.2018.12.027 ◽

2019 ◽

Vol 716 ◽

pp. 155-161 ◽

Cited By ~ 23

Author(s):

Khang D. Pham ◽

Nguyen N. Hieu ◽

Le M. Bui ◽

Huynh V. Phuc ◽

Bui D. Hoi ◽

...

Keyword(s):

Electric Field ◽

Electronic Properties ◽

Van Der Waals ◽

Band Alignment ◽

Type Ii ◽

Vertical Strain ◽

Van Der Waals Heterostructure

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Electrical control of excitons in van der Waals heterostructures with type-II band alignment

Physical Review B ◽

10.1103/physrevb.98.121302 ◽

2018 ◽

Vol 98 (12) ◽

Cited By ~ 6

Author(s):

A. Chaves ◽

J. G. Azadani ◽

V. Ongun Özçelik ◽

R. Grassi ◽

T. Low

Keyword(s):

Van Der Waals ◽

Band Alignment ◽

Type Ii ◽

Van Der Waals Heterostructures ◽

Electrical Control

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Impact of domain disorder on optoelectronic properties of layered semimetal MoTe2

2D Materials ◽

10.1088/2053-1583/ac3e03 ◽

2021 ◽

Author(s):

Maanwinder P. Singh ◽

Jonas Kiemle ◽

Ilkay Ozdemir ◽

Philipp Zimmermann ◽

Takashi Taniguchi ◽

...

Keyword(s):

Van Der Waals ◽

Topological Type ◽

Optoelectronic Properties ◽

Local Domain ◽

Type Ii ◽

Relaxation Dynamics ◽

Weyl Semimetal ◽

Ultrafast Relaxation ◽

Low Dimensional ◽

The Impact

Abstract We address the impact of crystal phase disorder on the generation of helicity-dependent photocurrents in layered MoTe2, which is one of the van der Waals materials to realize the topological type-II Weyl semimetal phase. Using scanning photocurrent microscopy, we spatially probe the phase transition and its hysteresis between the centrosymmetric, monoclinic 1T’ phase to the symmetry-broken, orthorhombic Td phase as a function of temperature. We ﬁnd a highly disordered photocurrent response in the intermediate temperature regime. Moreover, we demonstrate that helicity-dependent and ultrafast photocurrents in MoTe2 arise most likely from a local breaking of the electronic symmetries. Our results highlight the prospects of local domain morphologies and ultrafast relaxation dynamics on the optoelectronic properties of low-dimensional van der Waals circuits.

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Binary-ternary transition metal chalcogenides interlayer coupling in van der Waals type-II heterostructure for visible-infrared photodetector with efficient suppression dark currents

Nano Research ◽

10.1007/s12274-021-3790-4 ◽

2021 ◽

Author(s):

Guoliang Xu ◽

Danmin Liu ◽

Songyu Li ◽

Yi Wu ◽

Zhenlu Zhang ◽

...

Keyword(s):

Transition Metal ◽

Van Der Waals ◽

Interlayer Coupling ◽

Metal Chalcogenides ◽

Type Ii ◽

Infrared Photodetector ◽

Efficient Suppression ◽

Transition Metal Chalcogenides ◽

Dark Currents

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PN/PAs-WSe2 van der Waals heterostructures for solar cell and photodetector

Scientific Reports ◽

10.1038/s41598-020-73152-7 ◽

2020 ◽

Vol 10 (1) ◽

Author(s):

Xinyi Zheng ◽

Yadong Wei ◽

Kaijuan Pang ◽

Ngeywo Kaner Tolbert ◽

Dalin Kong ◽

...

Keyword(s):

Refractive Index ◽

Solar Cells ◽

Negative Refractive Index ◽

Wide Spectrum ◽

Van Der Waals ◽

Band Alignment ◽

Ultraviolet Region ◽

Type I ◽

Type Ii ◽

Van Der Waals Heterostructures

Abstract By first-principles calculations, we investigate the geometric stability, electronic and optical properties of the type-II PN-WSe2 and type-I PAs-WSe2 van der Waals heterostructures(vdWH). They are p-type semiconductors with indirect band gaps of 1.09 eV and 1.08 eV based on PBE functional respectively. By applying the external gate field, the PAs-WSe2 heterostructure would transform to the type-II band alignment from the type-I. With the increasing of magnitude of the electric field, two heterostructures turn into the n-type semiconductors and eventually into metal. Especially, PN/PAs-WSe2 vdWH are both high refractive index materials at low frequencies and show negative refractive index at high frequencies. Because of the steady absorption in ultraviolet region, the PAs-WSe2 heterostructure is a highly sensitive UV detector material with wide spectrum. The type-II PN-WSe2 heterostructure possesses giant and broadband absorption in the near-infrared and visible regions, and its solar power conversion efficiency of 13.8% is higher than the reported GaTe–InSe (9.1%), MoS2/p-Si (5.23%) and organic solar cells (11.7%). It does project PN-WSe2 heterostructure a potential for application in excitons-based solar cells.

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