scholarly journals Valley and spin accumulation in ballistic and hydrodynamic channels

2D Materials ◽  
2021 ◽  
Author(s):  
Mikhail M Glazov
Keyword(s):  
Spin Polarization ◽  
Spin Current ◽  
Mean Free Path ◽  
Hydrodynamic Regime ◽  
Electron Collisions ◽  
Hall Effects ◽  
Scattering Effects ◽  
Electron Mean Free Path ◽  
Spin Hall Effects ◽  
Skew Scattering

Abstract A theory of the valley and spin Hall effects and resulting accumulation of the valley and spin polarization is developed for ultraclean channels made of two-dimensional semiconductors where the electron mean free path due to the residual disorder or phonons exceeds the channel width. Both ballistic and hydrodynamic regimes of the electron transport are studied. The polarization accumulation is determined by interplay of the anomalous velocity, side-jump and skew scattering effects. In the hydrodynamic regime, where the electron-electron scattering is dominant, the valley and spin current generation and dissipation by the electron-electron collisions are taken into account. The accumulated polarization magnitude and its spatial distribution depend strongly on the transport regime. The polarization is much larger in the hydrodynamic regime as compared to the ballistic one. Significant valley and spin polarization arises in the immediate vicinity of the channel edges due to the side-jump and skew scattering mechanisms.

scholarly journals Anomalous spin Hall and inverse spin Hall effects in magnetic systems

2021 ◽  
Vol 4 (1) ◽  
Author(s):  
X. R. Wang
Keyword(s):  
Hall Effect ◽  
Order Parameter ◽  
Spin Current ◽  
Spin Hall Effect ◽  
Magnetic Systems ◽  
Charge Current ◽  
Spin Currents ◽  
Tensor Quantity ◽  
Hall Effects ◽  
Spin Hall Effects

AbstractSpin current is a very important tensor quantity in spintronics. However, the well-known spin-Hall effect (SHE) can only generate a few of its components whose propagating and polarization directions are perpendicular with each other and to an applied charge current. It is highly desirable in applications to generate spin currents whose polarization can be in any possible direction. Here anomalous SHE and inverse spin-Hall effect (ISHE) in magnetic systems are predicted. Spin currents, whose polarisation and propagation are collinear or orthogonal with each other and along or perpendicular to the charge current, can be generated, depending on whether the applied charge current is along or perpendicular to the order parameter. In anomalous ISHEs, charge currents proportional to the order parameter can be along or perpendicular to the propagating or polarization directions of the spin current.

Elastic scattering effects in the electron mean free path in a graphite overlayer studied by PES and LEED

2004 ◽  
Vol 566-568 ◽  
pp. 532-537 ◽  
Author(s):  
N. Barrett ◽  
E.E. Krasovskii ◽  
J.-M. Themlin ◽  
V.N. Strocov
Keyword(s):  
Elastic Scattering ◽  
Free Path ◽  
Mean Free Path ◽  
Scattering Effects ◽  
Electron Mean Free Path

Introduction

2017 ◽  
Author(s):  
S. O. Valenzuela
Keyword(s):  
Magnetic Field ◽  
Spin Current ◽  
Impurity Band ◽  
Electrical Current ◽  
Transverse Spin ◽  
Spin Orbit ◽  
Magnus Effect ◽  
Hall Effects ◽  
Definition Of ◽  
Spin Hall Effects

This chapter begins with a definition of spin Hall effects, which are a group of phenomena that result from spin–orbit interaction. These phenomena link orbital motion to spin direction and act as a spin-dependent magnetic field. In its simplest form, an electrical current gives rise to a transverse spin current that induces spin accumulation at the boundaries of the sample, the direction of the spins being opposite at opposing boundaries. It can be intuitively understood by analogy with the Magnus effect, where a spinning ball in a fluid deviates from its straight path in a direction that depends on the sense of rotation. spin Hall effects can be associated with a variety of spin-orbit mechanisms, which can have intrinsic or extrinsic origin, and depend on the sample geometry, impurity band structure, and carrier density but do not require a magnetic field or any kind of magnetic order to occur.

scholarly journals Spin Hall Effects Due to Phonon Skew Scattering

2015 ◽  
Vol 115 (7) ◽  
Author(s):  
Cosimo Gorini ◽  
Ulrich Eckern ◽  
Roberto Raimondi
Keyword(s):  
Hall Effects ◽  
Spin Hall Effects ◽  
Skew Scattering

scholarly journals Nanophotonic structures with optical surface modes for tunable spin current generation

Nanoscale ◽  
2021 ◽  
Vol 13 (11) ◽  
pp. 5791-5799
Author(s):  
P. V. Shilina ◽  
D. O. Ignatyeva ◽  
P. O. Kapralov ◽  
S. K. Sekatskii ◽  
M. Nur-E-Alam ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Spin Current ◽  
Optical Surface ◽  
Current Generation ◽  
Surface Modes ◽  
Hall Effects ◽  
Nanophotonic Structures ◽  
Spin Hall Effects ◽  
Optically Induced

We propose a novel type of photonic-crystal (PC)-based nanostructures for efficient and tunable optically-induced spin current generation via the spin Seebeck and inverse spin Hall effects.

scholarly journals Inverse spin Hall effects in Nd doped SrTiO3

AIP Advances ◽  
2017 ◽  
Vol 7 (12) ◽  
pp. 125218
Author(s):  
Qiuru Wang ◽  
Wenxu Zhang ◽  
Bin Peng ◽  
Wanli Zhang
Keyword(s):  
Hall Effects ◽  
Spin Hall Effects

scholarly journals Phonon residual resistance of pure crystals

2015 ◽  
Vol 29 (29) ◽  
pp. 1550206
Author(s):  
A. I. Agafonov
Keyword(s):  
Electric Field ◽  
Constant Electric Field ◽  
Finite Thickness ◽  
Mean Free Path ◽  
Residual Resistivity ◽  
Boltzmann Transport ◽  
Residual Resistance ◽  
Temperature Resistance ◽  
Electron Mean Free Path ◽  
The Ideal

In this paper, using the Boltzmann transport equation, we study the zero temperature resistance of perfect metallic crystals of a finite thickness d along which a weak constant electric field E is applied. This resistance, hereinafter referred to as the phonon residual resistance, is caused by the inelastic scattering of electrons heated by the electric field, with emission of long-wave acoustic phonons and is proportional to [Formula: see text]. Consideration is carried out for Cu, Ag and Au perfect crystals with the thickness of about 1 cm, in the fields of the order of 1 mV/cm. Following the Matthiessen rule, the resistance of the pure crystals, the thicknesses of which are much larger than the electron mean free path is represented as the sum of both the impurity and phonon residual resistances. The condition on the thickness and field is found at which the low-temperature resistance of pure crystals does not depend on their purity and is determined by the phonon residual resistivity of the ideal crystals. The calculations are performed for Cu with a purity of at least 99.9999%.

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