Studies on the Thermal Stability of Ni/n–GaN and Pt/n–GaN Schottky Barrier Diodes

2016 ◽  
Vol 3 (8) ◽  
pp. 085901 ◽  
Author(s):  
Ashish Kumar ◽  
Somna Mahajan ◽  
Seema Vinayak ◽  
R Singh
Keyword(s):  
Thermal Stability ◽  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Thermal Stability Of

Schottky Properties of Tungsten Compounds Refractory Contacts on n-GaAs Fabricated by Ion Beam Assisted Deposition

1990 ◽  
Vol 201 ◽  
Author(s):  
C. S. Park ◽  
J. S. Lee ◽  
J. W. Lee ◽  
J. Y. Kang ◽  
J. Y. Lee
Keyword(s):  
Thermal Stability ◽  
Schottky Barrier ◽  
Gaas Substrate ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Ion Beam ◽  
Good Thermal Stability ◽  
Barrier Heights ◽  
Ion Beam Assisted Deposition ◽  
Thermal Stability Of

AbstractA low energy ion beam assisted deposition (IBAD) technique has been developed to fabricate refractory W-Si-N films for the application to gate electrode of GaAs metal-semiconductor field effect transistors( MESFETs ). Thermal stability of the IBAD refractory metal/n-GaAs interface was investigated by examining the microstructure and Schottky diode characteristics. The Schottky barrier heights of 0.71, 0.84, and 0.76 eV were obtained after thermal annealing at 850°C for the W/, WN0.27/, and WSi0.3N0.4/GaAs diodes, respectively, and these values are comparable to those of the best results published with conventional reactive sputtering. While some crystalization of the deposit and reaction between film and substrate at the interface were observed with TEM for the W/ and WN/GaAs contacts annealed at 800°, the WSiN film remained amorphous and showed clear interface with the GaAs substrate without significant morphological change. The WS0.3N0.4/GaAs diode showed good thermal stability of Schottky barrier heights with only 20 meV variation in the temperature range between 700 and 850°C, and that is proposed to be due to the stable microstructure.

Thermal stability and radiation hardness of SiC-based schottky-barrier diodes

2001 ◽  
Vol 46 (5) ◽  
pp. 584-586 ◽  
Author(s):  
A. V. Afanas’ev ◽  
V. A. Il’in ◽  
I. G. Kazarin ◽  
A. A. Petrov
Keyword(s):  
Thermal Stability ◽  
Schottky Barrier ◽  
Radiation Hardness ◽  
Schottky Barrier Diodes

Effective surface diffusion of nickel on single crystal β-Ga2O3for Schottky barrier modulation and high thermal stability

2019 ◽  
Vol 7 (35) ◽  
pp. 10953-10960 ◽  
Author(s):  
Hojoong Kim ◽  
Sinsu Kyoung ◽  
Taiyoung Kang ◽  
Jang-Yeon Kwon ◽  
Kyung Hwan Kim ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thermal Stability ◽  
Single Crystal ◽  
Schottky Barrier ◽  
Surface Diffusion ◽  
Schottky Contact ◽  
High Thermal Stability ◽  
Schottky Barrier Diodes ◽  
Effective Surface

β-Ga2O3Schottky barrier diodes (SBDs) were demonstrated with Ni Schottky contact deposited by the confined magnetic field-based sputtering (CMFS) method.

scholarly journals Enhanced thermal stability of yttrium oxide-based RRAM devices with inhomogeneous Schottky-barrier

2020 ◽  
Vol 117 (1) ◽  
pp. 013504 ◽  
Author(s):  
Eszter Piros ◽  
Stefan Petzold ◽  
Alexander Zintler ◽  
Nico Kaiser ◽  
Tobias Vogel ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Schottky Barrier ◽  
Yttrium Oxide ◽  
Thermal Stability Of

Thermal Stability of Tasix-Gaas Schottky Barriers

1987 ◽  
Vol 92 ◽  
Author(s):  
T. E. Haynes ◽  
C. C. Han ◽  
S. S. Lau ◽  
S. T. Picraux ◽  
W. K. Chu
Keyword(s):  
Thermal Stability ◽  
Schottky Barrier ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Physical Characteristics ◽  
Schottky Barriers ◽  
Electrical Characteristics ◽  
Furnace Annealing ◽  
Barrier Heights ◽  
Thermal Stability Of

ABSTRACTSputtered TaSix films on GaAs have been examined as potential refractory Schottky barrier contacts suitable for self-aligned gate fabrication of GaAs MESFETs. The thermal stability of electrical and physical characteristics has been studied following furnace annealing or rapid thermal processing of contacts with compositions near Ta5Si3 (x=06). The electrical characteristics, interface interdiffusion, and evaporation loss of Ga and As through the contact have been examined. The barrier heights of 30-min furnaceannealed contacts were found to increase with temperature over the range 600 to 900°C. The Schottky barrier heights after rapid thermal processing (RTP) of the contacts were fixed at 0.78 eV for temperatures in the range 700 to 900°C. A major finding of this work is that the Schottky barrier contact maintains its integrity even though the equivalent of at least 5 monolayers of Ga and As have decomposed and evaporated through the contact.

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