Enhancing the Thermal Stability of GaSb Schottky-Barrier MOSFET With Pt Source/Drain

2018 ◽  
Vol 39 (7) ◽  
pp. 939-942 ◽  
Author(s):  
Ming-Li Tsai ◽  
Yun-Pin Chang ◽  
Chao-Hsin Chien
Keyword(s):  
Thermal Stability ◽  
Schottky Barrier ◽  
Thermal Stability Of ◽  
Schottky Barrier Mosfet

Schottky Properties of Tungsten Compounds Refractory Contacts on n-GaAs Fabricated by Ion Beam Assisted Deposition

1990 ◽  
Vol 201 ◽  
Author(s):  
C. S. Park ◽  
J. S. Lee ◽  
J. W. Lee ◽  
J. Y. Kang ◽  
J. Y. Lee
Keyword(s):  
Thermal Stability ◽  
Schottky Barrier ◽  
Gaas Substrate ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Ion Beam ◽  
Good Thermal Stability ◽  
Barrier Heights ◽  
Ion Beam Assisted Deposition ◽  
Thermal Stability Of

AbstractA low energy ion beam assisted deposition (IBAD) technique has been developed to fabricate refractory W-Si-N films for the application to gate electrode of GaAs metal-semiconductor field effect transistors( MESFETs ). Thermal stability of the IBAD refractory metal/n-GaAs interface was investigated by examining the microstructure and Schottky diode characteristics. The Schottky barrier heights of 0.71, 0.84, and 0.76 eV were obtained after thermal annealing at 850°C for the W/, WN0.27/, and WSi0.3N0.4/GaAs diodes, respectively, and these values are comparable to those of the best results published with conventional reactive sputtering. While some crystalization of the deposit and reaction between film and substrate at the interface were observed with TEM for the W/ and WN/GaAs contacts annealed at 800°, the WSiN film remained amorphous and showed clear interface with the GaAs substrate without significant morphological change. The WS0.3N0.4/GaAs diode showed good thermal stability of Schottky barrier heights with only 20 meV variation in the temperature range between 700 and 850°C, and that is proposed to be due to the stable microstructure.

scholarly journals Enhanced thermal stability of yttrium oxide-based RRAM devices with inhomogeneous Schottky-barrier

2020 ◽  
Vol 117 (1) ◽  
pp. 013504 ◽  
Author(s):  
Eszter Piros ◽  
Stefan Petzold ◽  
Alexander Zintler ◽  
Nico Kaiser ◽  
Tobias Vogel ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Schottky Barrier ◽  
Yttrium Oxide ◽  
Thermal Stability Of

Studies on the Thermal Stability of Ni/n–GaN and Pt/n–GaN Schottky Barrier Diodes

2016 ◽  
Vol 3 (8) ◽  
pp. 085901 ◽  
Author(s):  
Ashish Kumar ◽  
Somna Mahajan ◽  
Seema Vinayak ◽  
R Singh
Keyword(s):  
Thermal Stability ◽  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Thermal Stability Of

Thermal Stability of Tasix-Gaas Schottky Barriers

1987 ◽  
Vol 92 ◽  
Author(s):  
T. E. Haynes ◽  
C. C. Han ◽  
S. S. Lau ◽  
S. T. Picraux ◽  
W. K. Chu
Keyword(s):  
Thermal Stability ◽  
Schottky Barrier ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Physical Characteristics ◽  
Schottky Barriers ◽  
Electrical Characteristics ◽  
Furnace Annealing ◽  
Barrier Heights ◽  
Thermal Stability Of

ABSTRACTSputtered TaSix films on GaAs have been examined as potential refractory Schottky barrier contacts suitable for self-aligned gate fabrication of GaAs MESFETs. The thermal stability of electrical and physical characteristics has been studied following furnace annealing or rapid thermal processing of contacts with compositions near Ta5Si3 (x=06). The electrical characteristics, interface interdiffusion, and evaporation loss of Ga and As through the contact have been examined. The barrier heights of 30-min furnaceannealed contacts were found to increase with temperature over the range 600 to 900°C. The Schottky barrier heights after rapid thermal processing (RTP) of the contacts were fixed at 0.78 eV for temperatures in the range 700 to 900°C. A major finding of this work is that the Schottky barrier contact maintains its integrity even though the equivalent of at least 5 monolayers of Ga and As have decomposed and evaporated through the contact.

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

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