scholarly journals Response of the low-pressure hot-filament discharge plasma to a positively biased auxiliary disk electrode

Author(s):  
Mangilal Choudhary ◽  
Poyyeri Kunnath Sreejith
2005 ◽  
Vol 8 (1) ◽  
Author(s):  
Jeou-Long Lee ◽  
Chung-Ming Liu ◽  
Kuen Ting ◽  
Wei-Kung Cheng ◽  
Takayoshi Tsuchida ◽  
...  

AbstractSurface modification of the carbon included polyethylene (semi-conductive PE) surface for metallizing using a low pressure RF discharge plasma has been carried out. The contact angle was used as a measure of the wettability of the PE surface. The roughness and the chemical bondings in PE surface layer were analized by DFM and XPS, respectively. Typical results show that the contact angle decreases from approximately 94° to below 10° after several minutes' treatment and recovers to a saturation value when it was put open to the air after treatment. The saturation value of the contact angle is smaller as the gas pressure for treatment is higher and the treatment time is longer but all are below approximately 60° which is still smaller than that of untreated. DFM and XPS results show that the surface roughness and the bondings C-O and C=O in the PE surface layer also increase with increasing the treatment time and seem to be responsible for improving the hydrophilic property of PE. After pretreatment process, nickel was coated on the PE sheet by electrodeposition method and a good adhesion between the nickel layer and the PE surface compared with that of untreated was obtained.


2021 ◽  
Vol 2021 (13) ◽  
pp. 1656-1660
Author(s):  
A. V. Ushakov ◽  
I. V. Karpov ◽  
L. Yu. Fedorov ◽  
V. G. Demin ◽  
E. A. Goncharova ◽  
...  

1995 ◽  
Vol 10 (11) ◽  
pp. 2685-2688 ◽  
Author(s):  
Qijin Chen ◽  
Zhangda Lin

Diamond film was synthesized on thin Ti wafers (as thin as 40 μm) via hot filament chemical vapor deposition (HFCVD). The hydrogen embrittlement of the titanium substrate and the formation of a thick TiC interlayer were suppressed. A very low pressure (133 Pa) was employed to achieve high-density rapid nucleation and thus to suppress the formation of TiC. Oxygen was added to source gases to lower the growth temperature and therefore to slow down the hydrogenation of the thin Ti substrate. The role of the very low pressure during nucleation is discussed, providing insight into the nucleation mechanism of diamond on a titanium substrate. The as-grown diamond films were characterized by scanning electron microscopy (SEM), Raman spectroscopy, and x-ray analysis.


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