scholarly journals Is excess faster than deficient? A molecular-dynamics study of oxygen-interstitial and oxygen-vacancy diffusion in CeO2

2020 ◽  
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2012 ◽  
Vol 24 (48) ◽  
pp. 485002 ◽  
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Astrid Marchewka ◽  
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Roger A De Souza ◽  
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2012 ◽  
Vol 3 (20) ◽  
pp. 2970-2974 ◽  
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Bo Zhang ◽  
Jingyun Ye ◽  
Qingfeng Ge ◽  
Zhenrong Zhang

2015 ◽  
Vol 3 (16) ◽  
pp. 4081-4085 ◽  
Author(s):  
Zhonglu Guo ◽  
Linggang Zhu ◽  
Jian Zhou ◽  
Zhimei Sun

Resistance random access memory (RRAM) is known to be a promising candidate for next generation non-volatile memory devices, in which the diffusion of oxygen vacancies plays a key role in resistance switching.


2019 ◽  
Vol 131 (31) ◽  
Author(s):  
Sanghan Lee ◽  
Wooyoung Jin ◽  
Su Hwan Kim ◽  
Se Hun Joo ◽  
Gyutae Nam ◽  
...  

2019 ◽  
Vol 58 (31) ◽  
Author(s):  
Sanghan Lee ◽  
Wooyoung Jin ◽  
Su Hwan Kim ◽  
Se Hun Joo ◽  
Gyutae Nam ◽  
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