Electrical Conductivity, Defect Equilibrium and Oxygen Vacancy Diffusion Coefficient of La1 − x Ca x AlO3 − δ Single Crystals

1993 ◽  
Vol 140 (2) ◽  
pp. 467-471 ◽  
Author(s):  
Junichiro Mizusaki ◽  
Isamu Yasuda ◽  
Jun‐ichi Shimoyama ◽  
Shigeru Yamauchi ◽  
Kazuo Fueki
2012 ◽  
Vol 3 (20) ◽  
pp. 2970-2974 ◽  
Author(s):  
Yaobiao Xia ◽  
Bo Zhang ◽  
Jingyun Ye ◽  
Qingfeng Ge ◽  
Zhenrong Zhang

2015 ◽  
Vol 3 (16) ◽  
pp. 4081-4085 ◽  
Author(s):  
Zhonglu Guo ◽  
Linggang Zhu ◽  
Jian Zhou ◽  
Zhimei Sun

Resistance random access memory (RRAM) is known to be a promising candidate for next generation non-volatile memory devices, in which the diffusion of oxygen vacancies plays a key role in resistance switching.


2019 ◽  
Vol 131 (31) ◽  
Author(s):  
Sanghan Lee ◽  
Wooyoung Jin ◽  
Su Hwan Kim ◽  
Se Hun Joo ◽  
Gyutae Nam ◽  
...  

2019 ◽  
Vol 58 (31) ◽  
Author(s):  
Sanghan Lee ◽  
Wooyoung Jin ◽  
Su Hwan Kim ◽  
Se Hun Joo ◽  
Gyutae Nam ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document