scholarly journals Effects of temperature and dopant concentration on oxygen vacancy diffusion coefficient of yttria-stabilized zirconia

2019 ◽  
Vol 1274 ◽  
pp. 012005
Author(s):  
Le Thu Lam ◽  
Vu Van Hung
2019 ◽  
Vol 29 (3) ◽  
Author(s):  
Le Thu Lam ◽  
Vu Van Hung ◽  
Nguyen Thanh Hai

Oxygen vacancy diffusion in yttria-doped ceria (YDC) and yttria-stabilized zirconia(YSZ) are investigated using statistical moment method, including the anharmonicity effects of thermal lattice vibrations. The expressions of oxygen vacancy-dopant association energy and oxygen vacancy migration energy are derived in an explicit form. Calculation of the vacancy migration energy enable us to evaluate the important role of dopant cation on the oxygen vacancydiffusion. The dependences of the vacancy activation energies and diffusion coefficients in YDC and YSZ systems on dopant concentration are also discussed in detail. The calculated results are in good agreement with the other theoretical and experimental results.


2018 ◽  
Vol 123 (18) ◽  
pp. 185108 ◽  
Author(s):  
Joanna Stępień ◽  
Marcin Sikora ◽  
Czesław Kapusta ◽  
Daria Pomykalska ◽  
Mirosław M. Bućko

2012 ◽  
Vol 3 (20) ◽  
pp. 2970-2974 ◽  
Author(s):  
Yaobiao Xia ◽  
Bo Zhang ◽  
Jingyun Ye ◽  
Qingfeng Ge ◽  
Zhenrong Zhang

2015 ◽  
Vol 3 (16) ◽  
pp. 4081-4085 ◽  
Author(s):  
Zhonglu Guo ◽  
Linggang Zhu ◽  
Jian Zhou ◽  
Zhimei Sun

Resistance random access memory (RRAM) is known to be a promising candidate for next generation non-volatile memory devices, in which the diffusion of oxygen vacancies plays a key role in resistance switching.


2019 ◽  
Vol 131 (31) ◽  
Author(s):  
Sanghan Lee ◽  
Wooyoung Jin ◽  
Su Hwan Kim ◽  
Se Hun Joo ◽  
Gyutae Nam ◽  
...  

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