scholarly journals Effects of temperature and dopant concentration on oxygen vacancy diffusion coefficient of yttria-stabilized zirconia

2019 ◽  
Vol 1274 ◽  
pp. 012005
Author(s):  
Le Thu Lam ◽  
Vu Van Hung
Keyword(s):  
Diffusion Coefficient ◽  
Oxygen Vacancy ◽  
Dopant Concentration ◽  
Yttria Stabilized Zirconia ◽  
Vacancy Diffusion ◽  
Stabilized Zirconia ◽  
Effects Of Temperature ◽  
Oxygen Vacancy Diffusion

scholarly journals STUDY OF OXYGEN VACANCY DIFFUSION IN YTTRIA-DOPED CERIA AND YTTRIA-STABILIZED ZIRCONIA BY STATISTICAL MOMENT METHOD

2019 ◽  
Vol 29 (3) ◽  
Author(s):  
Le Thu Lam ◽  
Vu Van Hung ◽  
Nguyen Thanh Hai
Keyword(s):  
Oxygen Vacancy ◽  
Moment Method ◽  
Statistical Moment ◽  
Yttria Stabilized Zirconia ◽  
Doped Ceria ◽  
Migration Energy ◽  
Stabilized Zirconia ◽  
Yttria Doped Ceria ◽  
Oxygen Vacancy Diffusion ◽  
Statistical Moment Method

Oxygen vacancy diffusion in yttria-doped ceria (YDC) and yttria-stabilized zirconia(YSZ) are investigated using statistical moment method, including the anharmonicity effects of thermal lattice vibrations. The expressions of oxygen vacancy-dopant association energy and oxygen vacancy migration energy are derived in an explicit form. Calculation of the vacancy migration energy enable us to evaluate the important role of dopant cation on the oxygen vacancydiffusion. The dependences of the vacancy activation energies and diffusion coefficients in YDC and YSZ systems on dopant concentration are also discussed in detail. The calculated results are in good agreement with the other theoretical and experimental results.

scholarly journals Determination of oxygen vacancy limit in Mn substituted yttria stabilized zirconia

2018 ◽  
Vol 123 (18) ◽  
pp. 185108 ◽  
Author(s):  
Joanna Stępień ◽  
Marcin Sikora ◽  
Czesław Kapusta ◽  
Daria Pomykalska ◽  
Mirosław M. Bućko
Keyword(s):  
Oxygen Vacancy ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia

Acetone-Assisted Oxygen Vacancy Diffusion on TiO2(110)

2012 ◽  
Vol 3 (20) ◽  
pp. 2970-2974 ◽  
Author(s):  
Yaobiao Xia ◽  
Bo Zhang ◽  
Jingyun Ye ◽  
Qingfeng Ge ◽  
Zhenrong Zhang
Keyword(s):  
Oxygen Vacancy ◽  
Vacancy Diffusion ◽  
Oxygen Vacancy Diffusion

Design principles of tuning oxygen vacancy diffusion in SrZrO3 for resistance random access memory

2015 ◽  
Vol 3 (16) ◽  
pp. 4081-4085 ◽  
Author(s):  
Zhonglu Guo ◽  
Linggang Zhu ◽  
Jian Zhou ◽  
Zhimei Sun
Keyword(s):  
Oxygen Vacancy ◽  
Oxygen Vacancies ◽  
Random Access ◽  
Random Access Memory ◽  
Vacancy Diffusion ◽  
Access Memory ◽  
Promising Candidate ◽  
Resistance Random Access Memory ◽  
Non Volatile Memory ◽  
Oxygen Vacancy Diffusion

Resistance random access memory (RRAM) is known to be a promising candidate for next generation non-volatile memory devices, in which the diffusion of oxygen vacancies plays a key role in resistance switching.

scholarly journals Frontispiz: Oxygen Vacancy Diffusion and Condensation in Lithium‐Ion Battery Cathode Materials

2019 ◽  
Vol 131 (31) ◽  
Author(s):  
Sanghan Lee ◽  
Wooyoung Jin ◽  
Su Hwan Kim ◽  
Se Hun Joo ◽  
Gyutae Nam ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Lithium Ion Battery ◽  
Cathode Materials ◽  
Lithium Ion ◽  
Vacancy Diffusion ◽  
Oxygen Vacancy Diffusion
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