Design principles of tuning oxygen vacancy diffusion in SrZrO3 for resistance random access memory

2015 ◽  
Vol 3 (16) ◽  
pp. 4081-4085 ◽  
Author(s):  
Zhonglu Guo ◽  
Linggang Zhu ◽  
Jian Zhou ◽  
Zhimei Sun
Keyword(s):  
Oxygen Vacancy ◽  
Oxygen Vacancies ◽  
Random Access ◽  
Random Access Memory ◽  
Vacancy Diffusion ◽  
Access Memory ◽  
Promising Candidate ◽  
Resistance Random Access Memory ◽  
Non Volatile Memory ◽  
Oxygen Vacancy Diffusion

Resistance random access memory (RRAM) is known to be a promising candidate for next generation non-volatile memory devices, in which the diffusion of oxygen vacancies plays a key role in resistance switching.

Bipolar Switching Properties of the Manganese Oxide Thin Film RRAM Devices

2014 ◽  
Vol 602-603 ◽  
pp. 1056-1059 ◽  
Author(s):  
Min Chang Kuan ◽  
Fann Wei Yang ◽  
Chien Min Cheng ◽  
Kai Huang Chen ◽  
Jian Tz Lee
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Manganese Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Resistance Random Access Memory ◽  
Non Volatile Memory ◽  
Volatile Memory

Up to now, the various non-volatile memory devices such as, ferroelectric random access memory (FeRAM), magnetron random access memory (MRAM), and resistance random access memory (RRAM) were widely discussed and investigated. For these nonvolatile memory devices, the resistance random access memory (RRAM) devices will play an important role because of its non-destructive readout, low operation voltage, high operation speed, long retention time, and simple structure. The resistance random access memory (RRAM) devices were only consisting of one resistor and one corresponding transistor. The subject of this work was to study the characteristics of manganese oxide (MnO) thin films deposited on transparent conductive thin film using the rf magnetron sputtering method. The optimal sputtering conditions of as-deposited manganese oxide (MnO) thin films were the rf power of 80 W, chamber pressure of 20 mTorr, substrate temperature of 580°C, and an oxygen concentration of 40%. The basic mechanisms for the bistable resistance switching were observed. In which, the non-volatile memory and switching properties of the manganese oxide (MnO) thin film structures were reported and the relationship between the memory windows and electrical properties was investigated.

Adjustable built-in resistor on oxygen-vacancy-rich electrode-capped resistance random access memory

2016 ◽  
Vol 9 (10) ◽  
pp. 104201 ◽  
Author(s):  
Chih-Hung Pan ◽  
Ting-Chang Chang ◽  
Tsung-Ming Tsai ◽  
Kuan-Chang Chang ◽  
Tian-Jian Chu ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Resistance Random Access Memory

Effects of the oxygen vacancy concentration in InGaZnO-based resistance random access memory

2012 ◽  
Vol 101 (24) ◽  
pp. 243503 ◽  
Author(s):  
Moon-Seok Kim ◽  
Young Hwan Hwang ◽  
Sungho Kim ◽  
Zheng Guo ◽  
Dong-Il Moon ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Vacancy Concentration ◽  
Random Access ◽  
Random Access Memory ◽  
Oxygen Vacancy Concentration ◽  
Access Memory ◽  
Resistance Random Access Memory

Reproducible Resistance Switching in Ni/NiO/Ni Trilayer

2007 ◽  
Vol 997 ◽  
Author(s):  
Hisashi Shima ◽  
Fumiyoshi Takano ◽  
Hiro Akinaga ◽  
Isao H Inoue ◽  
Hidenori Takagi
Keyword(s):  
Thin Film ◽  
High Speed ◽  
Random Access ◽  
Random Access Memory ◽  
Resistance Switching ◽  
Access Memory ◽  
Pt Electrode ◽  
Resistance Random Access Memory ◽  
Nio Thin Film ◽  
Non Volatile Memory

AbstractThe resistance random access memory is attracting much attention as a high-density and high-speed non-volatile memory, having large resistance switching ration and good affinity with the conventional CMOS technologies. We demonstrate the resistance switching in the NiO thin film without using Pt electrode.

Switching mechanism of Al/La1−xSrxMnO3 resistance random access memory. I. Oxygen vacancy formation in perovskites

RSC Advances ◽  
2015 ◽  
Vol 5 (124) ◽  
pp. 102772-102779 ◽  
Author(s):  
Nodo Lee ◽  
Yves Lansac ◽  
Hyunsang Hwang ◽  
Yun Hee Jang
Keyword(s):  
Oxygen Vacancy ◽  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Vacancy Formation ◽  
Access Memory ◽  
Half Metallic ◽  
Switching Mechanism ◽  
Resistance Random Access Memory ◽  
Oxygen Vacancy Formation

The oxygen vacancy formation in half-metallic perovskite LSMO itself plays an interesting role in the resistive switching.

Forming-free Resistance Random Access Memory Using Ta2O5/TaOx Bi-layer Prepared by Magnetron Sputtering Method

2012 ◽  
Vol 1430 ◽  
Author(s):  
Natsuki Fukuda ◽  
Kazunori Fukuju ◽  
Isamu Yogosawa ◽  
Kazumasa Horita ◽  
Shin Kikuchi ◽  
...  
Keyword(s):  
Mass Production ◽  
Oxygen Vacancies ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Resistance Change ◽  
Resistance Random Access Memory ◽  
Good Uniformity ◽  
Switching Characteristics ◽  
Excellent Stability

ABSTRACTThis paper describes proposal of ReRAM switching mechanism, development of production tool for ReRAM sputtering and improvement in TaOx-ReRAM switching characteristics. We propose that a ReRAM-cell has stack a structure in which an oxygen vacancy supply layer (TaOx) and an oxygen accumulation layer (Ta2O5) sandwiched by the top and bottom electrodes. Resistance change of the ReRAM-cell is caused by the oxygen vacancies migrating between the TaOx and the Ta2O5 layers by applied voltage. This prediction corresponded to the experimental facts. The thickness of Ta2O5 film sputtered by a mass production tool had good uniformity (±1.0%) and excellent stability (±1.0%). Also the sheet resistance uniformity (1σ) of TaOx film had 3.6%. By examining the sputtering conditions, the ReRAM-cell having a Ta2O5/TaOx bi-layer operated in less than 100μA with a forming-free and had excellent endurance property to 1010 cycles at 50nsec.

Conduction band caused by oxygen vacancies in aluminum oxide for resistance random access memory

2012 ◽  
Vol 112 (3) ◽  
pp. 033711 ◽  
Author(s):  
Seisuke Nigo ◽  
Masato Kubota ◽  
Yoshitomo Harada ◽  
Taisei Hirayama ◽  
Seiichi Kato ◽  
...  
Keyword(s):  
Aluminum Oxide ◽  
Conduction Band ◽  
Oxygen Vacancies ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Resistance Random Access Memory

Multilevel oxygen-vacancy conductive filaments in β-Ga2O3 based resistive random access memory

2021 ◽  
Vol 23 (10) ◽  
pp. 5975-5983
Author(s):  
Jie Hou ◽  
Rui Guo ◽  
Jie Su ◽  
Yawei Du ◽  
Zhenhua Lin ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Low Resistance ◽  
Multilevel Storage

In this study, at least three kinds of VOs and conductive filaments with low resistance states and forming and set voltages are found for β-Ga2O3 memory. This suggests the great potential of β-Ga2O3 memory for multilevel storage application.

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