Imaging surveillance after open aortic repair: a feasibility study of three-dimensional growth mapping

Author(s):  
Yunus Ahmed ◽  
Nitesh Nama ◽  
Ignas B Houben ◽  
Joost A van Herwaarden ◽  
Frans L Moll ◽  
...  

Abstract OBJECTIVES Confident growth assessment during imaging follow-up is often limited by substantial variability of diameter measurements and the fact that growth does not always occur at standard measurement locations. There is a need for imaging-based techniques to more accurately assess growth. In this study, we investigated the feasibility of a three-dimensional aortic growth assessment technique to quantify aortic growth in patients following open aortic repair. METHODS Three-dimensional aortic growth was measured using vascular deformation mapping (VDM), a technique which quantifies the localized rate of volumetric growth at the aortic wall, expressed in units of Jacobian (J) per year. We included 16 patients and analysed 6 aortic segments per patient (96 total segments). Growth was assessed by 3 metrics: clinically reported diameters, Jacobian determinant and targeted diameter re-measurements. RESULTS VDM was able to clearly depict the presence or absence of localized aortic growth and allows for an assessment of the distribution of growth and its relation to anatomic landmarks (e.g. anastomoses, branch arteries). Targeted diameter change showed a stronger and significant correlation with J (r = 0.20, P = 0.047) compared to clinical diameter change (r = 0.15, P = 0.141). Among 20/96 (21%) segments with growth identified by VDM, growth was confirmed by clinical measurements in 7 and targeted re-measurements in 11. Agreement of growth assessments between VDM and diameter measurements was slightly higher for targeted re-measurements (kappa = 0.38) compared to clinical measurements (kappa = 0.25). CONCLUSIONS Aortic growth is often uncertain and underappreciated when assessed via standard diameter measurements. Three-dimensional growth assessment with VDM offers a more comprehensive assessment of growth, allows for targeted diameter measurements and could be an additional tool to determine which post-surgical patients at high and low risk for future complications.

1998 ◽  
Vol 5 (4) ◽  
pp. 217-223 ◽  
Author(s):  
D PINELLI ◽  
J DRAKE ◽  
M WILLIAMS ◽  
D CAVANAGH ◽  
J BECKER

Atmosphere ◽  
2021 ◽  
Vol 12 (7) ◽  
pp. 906
Author(s):  
Ivan Bašták Ďurán ◽  
Martin Köhler ◽  
Astrid Eichhorn-Müller ◽  
Vera Maurer ◽  
Juerg Schmidli ◽  
...  

The single-column mode (SCM) of the ICON (ICOsahedral Nonhydrostatic) modeling framework is presented. The primary purpose of the ICON SCM is to use it as a tool for research, model evaluation and development. Thanks to the simplified geometry of the ICON SCM, various aspects of the ICON model, in particular the model physics, can be studied in a well-controlled environment. Additionally, the ICON SCM has a reduced computational cost and a low data storage demand. The ICON SCM can be utilized for idealized cases—several well-established cases are already included—or for semi-realistic cases based on analyses or model forecasts. As the case setup is defined by a single NetCDF file, new cases can be prepared easily by the modification of this file. We demonstrate the usage of the ICON SCM for different idealized cases such as shallow convection, stratocumulus clouds, and radiative transfer. Additionally, the ICON SCM is tested for a semi-realistic case together with an equivalent three-dimensional setup and the large eddy simulation mode of ICON. Such consistent comparisons across the hierarchy of ICON configurations are very helpful for model development. The ICON SCM will be implemented into the operational ICON model and will serve as an additional tool for advancing the development of the ICON model.


2011 ◽  
Vol 148-149 ◽  
pp. 54-57
Author(s):  
Xiao Ping Lin ◽  
Yun Dong ◽  
Lian Wei Yang

The Al2O3 nano-films of different thicknesses (1~100nm) were successfully deposited on the monocrystalline Si surface by using ion beam sputtering deposition. The surface topography and the component of nano-films with different thickness were analyzed. The quality of the surface of nano-films was systematically studied. When the films’ thickness increase, the studies by atomic force microscope (AFM), X-ray photoelectron spectrum(XPS) show that the gathering grain continually grows up and transits from acerose cellula by two-dimensional growth to globularity by three-dimensional growth. The elements O, Al and Si were found on the surface of Al2O3 nano-films. With the thickness of the films increasing, the content of Al gradually increases and the intensity peak of Si wears off, the surface quality of the deposited films is ceaselessly improved


e-Polymers ◽  
2007 ◽  
Vol 7 (1) ◽  
Author(s):  
Corrado Berti ◽  
Annamaria Celli ◽  
Paola Marchese ◽  
Elisabetta Marianucci ◽  
Giancarlo Barbiroli ◽  
...  

AbstractSome poly(alkylene dicarboxylate)s, derived from ethanediol or 1,4- butanediol and different diacids, have been synthesized and analyzed by DSC to determine the correlations existing between the thermal properties and the length of the aliphatic chain. The polymers show crystallization and melting temperatures and enthalpies which increase as the polymethylene segments lengthen, due to the formation of more stable crystals. The samples derived from ethanediol are peculiar; they show reorganization processes during the melting and the melting temperatures are notably higher with respect to those of the other polyesters. This behavior is discussed. Isothermal analysis highlights that poly(alkylene dicarboxylate)s are fast crystallizing polymers. The Avrami analysis suggests a crystallization mechanism characterized by heterogeneous nucleation and three dimensional growth; secondary crystallizations is present only in the samples characterized by short -(CH2)- sequences, due to the reorganization of less perfect crystalline forms. A comparative study between the crystallization rates as a function of the undercooling is reported.


1997 ◽  
Vol 55 (6) ◽  
pp. 7789-7792 ◽  
Author(s):  
T. Abel ◽  
E. Brener ◽  
H. Müller-Krumbhaar

2015 ◽  
Vol 654 ◽  
pp. 213-217 ◽  
Author(s):  
Jan Grym ◽  
Roman Yatskiv ◽  
Ondřej Černohorský ◽  
María Verde ◽  
Jan Lorinčík ◽  
...  

We report on the electrophoretic deposition (EPD) of metal nanoparticles (NPs) prepared in reverse micelles on semiconductor substrates with the aim to fabricate sensitive Schottky-based hydrogen sensors with fast response and high degree of selectivity. We discuss the mechanism of NP monolayer formation and show which parameters are essential for the transition from three-dimensional to two-dimensional growth.


1988 ◽  
Vol 116 ◽  
Author(s):  
R.A. Rudder ◽  
S.V. Hattangady ◽  
D.J. Vitkavage ◽  
R.J. Markunas

Heteroepitaxial growth of Ge on Si(100) has been accomplished using remote plasma enhanced chemical vapor deposition at 300*#x00B0;C. Reconstructed surfaces with diffraction patterns showing non-uniform intensity variations along the lengths of the integral order streaks are observed during the first 100 Å of deposit. This observation of an atomically rough surface during the initial stages of growth is an indication of three-dimensional growth. As the epitaxial growth proceeds, the diffraction patterns become uniform with extensive streaking on both the integral and fractional order streaks. Subsequent growth, therefore, takes place in a layer-by-layer, two-dimensional mode. X-ray photoelectron spectroscopy of the early nucleation stages, less than 80 Å, show that there is uniform coverage with no evidence of island formation.


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