scholarly journals Copper acetate-facilitated transfer-free growth of high-quality graphene advancing hydrovoltaic electricity generators

2021 ◽  
Author(s):  
Jingyuan Shan ◽  
Sunmiao Fang ◽  
Wendong Wang ◽  
Wen Zhao ◽  
Rui Zhang ◽  
...  

ABSTRACT Direct synthesis of high-quality graphene on dielectric substrates without a transfer process is of vital importance to aim at a variety of applications. Current strategies for boosting high-quality graphene growth, such as remote metal catalyzation otherwise are limited by poor performance with respect to the release of metal catalysts and hence suffer from the problem of metal residues. Herein, we report an effective approach that utilizes a metal-containing species, copper acetate, to continuously supply copper clusters in a gaseous form to aid transfer-free growth of graphene over a wafer scale. The thus-derived graphene films were found to show reduced multilayer density and improved electrical performance and exhibited a carrier mobility of 8500 cm2 V−1 s−1. Furthermore, droplet-based hydrovoltaic electricity generator devices based on directly grown graphene were found to exhibit robust voltage output and long cyclic stability, in stark contrast to their counterpart based on transferred graphene, demonstrating its potential for emerging energy harvesting applications. The work presented here offers a promising solution to organize the metal catalytic booster toward the transfer-free synthesis of high-quality graphene and enable smart energy generation.

MRS Advances ◽  
2020 ◽  
Vol 5 (52-53) ◽  
pp. 2727-2735
Author(s):  
Nidhi ◽  
Tashi Nautiyal ◽  
Samaresh Das

AbstractSeveral techniques have been employed for large-scale synthesis of group 10 transition metal dichalcogenides (TMDCs) based on platinum and palladium for nano- and opto-electronic device applications. Nickel Sulphides (NixSy), belonging to group 10 TMDC family, have been widely explored in the field of energy storage devices such as batteries and supercapacitors, etc. and commonly synthesized through the solution process or hydrothermal methods. However, the high-quality thin film growth of NixSy for nanoelectronic applications remains a central challenge. Here, we report the chemical vapor deposition (CVD) growth of NiS2 thin film onto a two-inch SiO2/Si substrate, for the first time. Techniques such as X-ray photoelectron spectroscopy, X-ray Diffraction, Raman Spectroscopy, Scanning Electron Microscopy, have been used to analyse the quality of this CVD grown NiS2 thin film. A high-quality crystalline thin film of thickness up to a few nanometres (~28 nm) of NiS2 has been analysed here. We also fabricated a field-effect device based on NiS2 thin film using interdigitated electrodes by optical lithography. The electrical performance of the fabricated device is characterized at room temperature. On applying the drain voltage from -2 to +2 V, the device shows drain current in the range of 10-9 A before annealing and in the range of 10-6 A after annealing. This, being comparable to that from devices based on MoS2 and other two-dimensional materials, projects CVD grown NiS2 as a good alternative material for nanoelectronic devices.


2017 ◽  
Vol 29 (35) ◽  
pp. 1700072 ◽  
Author(s):  
Dechao Geng ◽  
Xiaoxu Zhao ◽  
Zhongxin Chen ◽  
Weiwei Sun ◽  
Wei Fu ◽  
...  

2004 ◽  
Vol 836 ◽  
Author(s):  
David M. Isaacson ◽  
Carl L. Dohrman ◽  
Arthur J. Pitera ◽  
Saurabh Gupta ◽  
Eugene A. Fitzgerald

ABSTRACTWe present a framework for obtaining high quality relaxed graded SiGe buffers on Si for III-V integration. By avoiding dislocation nucleation in Si1−xGex layers of x>0.96, we have achieved a relaxed Si0.04Ge0.96 platform on Si(001) offcut 2° that has a threading dislocation density of 7.4×105 cm−2. This 2° offcut orientation was determined to be the minimum necessary for APB-free growth of GaAs. Furthermore, we found that we could compositionally grade the Ge content in the high-Ge portion of the buffer at up to 17 %Ge μm−1 with no penalty to the dislocation density. The reduction in both threading dislocation density and buffer thickness exhibited by our method is an especially significant development for relatively thick minority-carrier devices which use III-V materials such as multi-junction solar cells.


Nanoscale ◽  
2016 ◽  
Vol 8 (2) ◽  
pp. 930-937 ◽  
Author(s):  
Yaping Wu ◽  
Yufeng Hao ◽  
Mingming Fu ◽  
Wei Jiang ◽  
Qingzhi Wu ◽  
...  

2013 ◽  
Vol 25 (7) ◽  
pp. 938-938 ◽  
Author(s):  
Jianyi Chen ◽  
Yunlong Guo ◽  
Yugeng Wen ◽  
Liping Huang ◽  
Yunzhou Xue ◽  
...  

Nanoscale ◽  
2016 ◽  
Vol 8 (18) ◽  
pp. 9822-9827 ◽  
Author(s):  
Won-Hwa Park ◽  
Insu Jo ◽  
Byung Hee Hong ◽  
Hyeonsik Cheong

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