scholarly journals Strain And Symmetry-induced Structural Transitions in Ultra-thin BiFeO3 Films

2014 ◽  
Vol 70 (a1) ◽  
pp. C1610-C1610
Author(s):  
Christian Schlepuetz ◽  
Yongsoo Yang ◽  
Nancy Senabulya ◽  
Carolina Adamo ◽  
Christianne Beekman ◽  
...  
Keyword(s):  
Thin Films ◽  
Spontaneous Polarization ◽  
Bismuth Ferrite ◽  
Compressive Strain ◽  
Department Of Energy ◽  
Epitaxial Thin Films ◽  
Pixel Detector ◽  
Reciprocal Space Mapping ◽  
Out Of Plane ◽  
Unit Cells

As one of very few room temperature multiferroic materials, bismuth ferrite (BiFeO3: BFO) has been studied extensively in recent years. The bulk form of BFO is known to have a rhombohedrally distorted quasi-cubic perovskite structure with an (a–,a–,a–) octahedral tilt pattern, exhibiting both anti-ferrodistortive displacements and a spontaneous polarization along the <111> axes. Investigating epitaxial thin films under compressive strain, several studies have reported that the polarization direction is tilted towards the [001] out-of-plane direction, while maintaining a significant in-plane component. This effect is accompanied by a significant enhancement of the spontaneous polarization and a series of phase transitions from rhombohedral (R) for small strains to R-like monoclinic (MA) to T-like monoclinic (MC) and to tetragonal (T) for larger strains [1]. Through synchrotron-based 3-dimensional reciprocal space mapping (RSM), facilitated by using X-ray area detectors (Pilatus 100K pixel detector), we have investigated the structure of ultra-thin BFO films grown on SrTiO3 (STO), LaAlO3 (LAO), and TbScO3 (TSO) substrates with thicknesses of only several unit cells. In this thickness regime, the influence of the substrate atomic structure on the properties of the ultra-thin films is very pronounced, and the films exhibit perfect heteroepitaxy up to a critical thickness when the build up of strain energy forces the films into a relaxed structure. Both on STO [2] and LAO, the ultra-thin BFO undergoes a monoclinic to tetragonal phase transition, but with very different c/a axis ratios. On TSO, a very pronounced and well-ordered stripe domainstructure evolves where the domain sizes are strongly thickness- dependent. Argonne National Laboratory's work was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under contract DE-AC02-06CH11357.

Two conductive mechanisms in LaMnO3 thin film: Adiabatic and nonadiabatic small polaronic hopping

2021 ◽  
pp. 2150310
Author(s):  
Weiyuan Wang ◽  
Jiyu Fan ◽  
Huan Zheng ◽  
Jing Wang ◽  
Hao Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Theoretical Models ◽  
Magnetic Phase Transitions ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
Epitaxial Relationship ◽  
Reciprocal Space Mapping ◽  
Force Microscopy ◽  
Atomic Force ◽  
Out Of Plane

We have presented the structural, surface morphology, magnetic and resistivity data for perovskite LaMnO3 epitaxial thin films which are fabricated on well-oriented (001) LaAlO3 substrates by pulsed laser deposition technique. X-ray diffraction [Formula: see text]–[Formula: see text] linear scans and reciprocal space mapping measurement confirm that the out-of-plane and in-plane epitaxial relationship are LMO(001)/LAO(001) and LMO(110)/LAO(110), respectively. Surface roughness determined by atomic force microscopy was no more than 0.3 nm. In the whole studied temperature range, all films only show a paramagnetic behavior instead of any magnetic phase transitions. Correspondingly, the electron transport behaviors always exhibit an insulting state as the temperature changes from high to low. However, we find that none of theoretical models can individually be used to understand their conductive mechanisms. Further studies indicated that charge carries of high and low temperature region obey adiabatic and nonadiabatic small polaronic hopping mechanisms, respectively. This finding offers new ways of exploiting the abnormal ferromagnetism in LaMnO3 multilayer thin films.

scholarly journals Переключение поляризации вдоль подложки в тонких пленках Bi-=SUB=-4-=/SUB=-Ti-=SUB=-3-=/SUB=-O-=SUB=-12-=/SUB=- при различных деформационных напряжениях

2020 ◽  
Vol 90 (1) ◽  
pp. 128
Author(s):  
В.М. Мухортов ◽  
Д.В. Стрюков ◽  
С.В. Бирюков ◽  
Ю.И. Головко
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Domain Structure ◽  
Spontaneous Polarization ◽  
Unit Cell ◽  
Interface Plane ◽  
Dielectric Characteristics ◽  
Unit Cells ◽  
Mgo Substrate

A study of epitaxial Bi4Ti3O12 thin films with a pre-deposited 4 nm Ba0.4Sr0.6TiO3 sublay-er on (001) MgO substrates has been performed. In the obtained heterostructures, the rotation of the Bi4Ti3O12 film unit cells by an angle of 45° relative to the MgO substrate unit cell in the inter-face plane has been observed. The Bi4Ti3O12 films contain unit cell deformations depending on the thickness of the film and the sign of the deformation changes at a thickness of ~40 nm. The switchable in-plane spontaneous polarization of Bi4Ti3O12 film at the 180° domain structure oc-curs at a film thickness of 10 nm and increases with a thickness up to 54 µC/cm2. The study of the dielectric characteristics of the films confirmed the existence of properties anisotropy in the interface plane and the effect of deformation of the unit cell on the properties of heterostruc-tures.

B23-O-01Peculiar Domains by Local Out-of- Plane Strain in Chemically Modified Bismuth Ferrite Thin Films

Microscopy ◽  
2015 ◽  
Vol 64 (suppl 1) ◽  
pp. i53.1-i53
Author(s):  
Si-Young Choi ◽  
Sung-Dae Kim ◽  
Jungho Ryu
Keyword(s):  
Thin Films ◽  
Plane Strain ◽  
Bismuth Ferrite ◽  
Chemically Modified ◽  
Out Of Plane ◽  
Ferrite Thin Films

Buffer Assisted Epitaxial Growth of Bi1.5Zn1Nb1.5O7 Thin Films by Pulsed Laser Deposition for Optoelectronic Applications

2012 ◽  
Vol 1454 ◽  
pp. 183-188 ◽  
Author(s):  
Krishnaprasad Sasi ◽  
Sebastian Mailadil ◽  
Fredy Rojas ◽  
Aldrin Antony ◽  
Jayaraj Madambi
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Epitaxial Thin Films ◽  
Reciprocal Space Mapping ◽  
High Tunability ◽  
Crystalline Nature ◽  
Zno Buffer Layer

ABSTRACTBi1.5Zn1Nb1.5O7 (BZN) epitaxial thin films were prepared on Al2O3with a double ZnO buffer layer by pulsed laser deposition. The pole figure analysis and reciprocal space mapping revealed the single crystalline nature of the thin film. The sharp intense spots in the SAED pattern also indicates the highly crystalline nature of BZN thin film. The electrical properties of the as deposited thin films were investigated by patterning an inter digital capacitor (IDC) structure on BZN. A high tunability was observed in this epitaxially grown thin films.

scholarly journals Substrate induced tuning of compressive strain and phonon modes in large area MoS 2 and WS 2 van der Waals epitaxial thin films

2017 ◽  
Vol 470 ◽  
pp. 51-57 ◽  
Author(s):  
Rajib Sahu ◽  
Dhanya Radhakrishnan ◽  
Badri Vishal ◽  
Devendra Singh Negi ◽  
Anomitra Sil ◽  
...  
Keyword(s):  
Thin Films ◽  
Compressive Strain ◽  
Van Der Waals ◽  
Epitaxial Thin Films ◽  
Large Area ◽  
Phonon Modes

Crystal Structures and Surface Morphologies of LaGaO3-Based Epitaxial Thin Films Grown by a Pulse Laser Deposition Method

2013 ◽  
Vol 582 ◽  
pp. 153-156 ◽  
Author(s):  
Ayuko Matsunaga ◽  
Yuuki Kitanaka ◽  
Ryotaro Inoue ◽  
Yuji Noguchi ◽  
Masaru Miyayama ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer ◽  
Laser Pulses ◽  
Lattice Parameter ◽  
Laser Deposition ◽  
Pulse Laser Deposition Method ◽  
Epitaxial Thin Films ◽  
Out Of Plane ◽  
Krf Excimer Laser ◽  
Surface Morphologies

High-quality La0.84Sr0.16Ga0.26Mg0.74O3-δ (LSGM) epitaxial thin films were successfully grown on (100)-SrTiO3 (STO) substrates at a temperature of 800 °C by a pulsed laser deposition (PLD) method with KrF excimer laser pulses at an ozone pressure of 1.3 × 103 Pa. X-ray diffraction rocking curve measurements showed that the LSGM films had a full-width at half-maximum (FWHM) value of 0.11 °for out-of-plane 002 reflection, which was smaller than that reported for LaGaO3 films grown by atomic layer deposition methods (0.18 o). The reciprocal spaces mapping of 103 refraction showed that the LSGM films had a slightly larger lattice parameter a (out-of-plane) of 0.393 nm than a// (in-plane) of 0.391 nm.

Electronics Based on Domain Walls

Domain Walls ◽  
2020 ◽  
pp. 340-350
Author(s):  
J. Seidel ◽  
R. Ramesh
Keyword(s):  
Thin Films ◽  
Domain Wall ◽  
Material Properties ◽  
Domain Walls ◽  
Bismuth Ferrite ◽  
Epitaxial Thin Films ◽  
Wide Range ◽  
New Material ◽  
Work Done ◽  
Exclusive Focus

This chapter reviews some of the initial developments and recently introduced potential application concepts related to domain walls in ferroelectrics and multiferroics. It gives a special (non-exclusive) focus on the heavily investigated bismuth ferrite BiFeO3 system as one of the rare examples of a single phase room-temperature multiferroic system that can be widely tailored in application relevant epitaxial thin films. Here, DWs as well as other topological structures reveal new ways to novel tailored states of matter with a wide range of electronic properties. Domain wall electronics, particularly with ferroelectrics and multiferroics, provides new nanotechnological concepts for identifying, understanding, and designing new material properties. However, this chapter observes that there has been very little work done on controlling electronic correlations.

Ultrafast Photostriction in Thin Film Bismuth Ferrite and its Correlation to Electronic Dynamics

2013 ◽  
Vol 1528 ◽  
Author(s):  
Yuelin Li ◽  
Haidan Wen ◽  
Pice Chen ◽  
Margaret P. Cosgriff ◽  
Donald Walko ◽  
...  
Keyword(s):  
Thin Films ◽  
Carrier Transport ◽  
Transient Absorption ◽  
Bismuth Ferrite ◽  
Complex Oxide ◽  
Transient Absorption Spectroscopy ◽  
Carrier Relaxation ◽  
Multiferroic Bifeo ◽  
Out Of Plane ◽  
Spectroscopy Experiment

ABSTRACTA series of laser pump, x-ray probe experiments show that above band gap photoexcitation can generate a large out-of-plane strain in multiferroic BiFeO3 thin films. The strain decays in a time scale that is the same as the photo-induced carriers measured in an optical transient absorption spectroscopy experiment. We attribute the strain to the piezoelectric effect due to screening of the depolarization field by laser induced carriers. A strong film thickness dependence of strain and carrier relaxation is also observed, revealing the role of the carrier transport in determining the structural and carrier dynamics in complex oxide thin films.

High Resolution X-Ray Scattering Studies of Strain in Epitaxial Thin Films of Yttrium Silicide Grown on Silicon(111)

1989 ◽  
Vol 160 ◽  
Author(s):  
L. J. Martinez-Miranda ◽  
M. P. Siegal ◽  
P. A. Heiney ◽  
J. J. Santiago-Aviles ◽  
W. R. Graham
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Grazing Incidence ◽  
Lattice Parameters ◽  
Epitaxial Thin Films ◽  
X Ray ◽  
X Ray Scattering ◽  
Areal Coverage ◽  
Out Of Plane ◽  
Ray Scattering

AbstractWe have used high resolution grazing incidence x-ray scattering (GIXS) to study the in-plane and out-of-plane structure of epitaxial YSi2-x films grown on Si (111), with thicknesses ranging from 85Å to 510Å. Our results indicate that the films are strained, and that film strain increases as a function of thickness, with lattice parameters varying from a = 3.846Å/c = 4.142Å for the 85Å film to a = 3.877Å/c = 4.121Å for the 510Å film. We correlate these results with an increase in pinhole areal coverage as a function of thickness. In addition, our measurements show no evidence for the existence of ordered silicon vacancies in the films.

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