scholarly journals The growth of silver iodide films

It is now well established that a large class of important chemical reactions is controlled by the growth of obstructive films, but our knowledge of the mechanism of the growth of such films—especially at low temperatures—is still very imperfect. The present paper describes a detailed study of a particularly instructive case of film-growth, the action of iodine on silver; this reaction was chosen because silver iodide films—in contrast with oxide films—reach visible thickness rapidly at ordinary temperatures. The optical properties of these films have already been studied by Wernick, whilst much information regarding the velocity of film-growth has been obtained by Tammanm by Kohlschutter and Krahenbiihl, and by Hartung. Tammann used the interference colour as the means of arriving at the thickness of the film; this method has certain unique advantages, but the more recent work of Tammann and Bockow has indicated that—in the case of oxide-films at least—the particular form of the method employed gives values for the thickness differing widely from those obtained by the gravimetric method. Tammann expressed the relation between the thickness ( y ) and the time ( t ) by the parabolic equation y 2 = 2 pt , where p is a. constant. Kohlschütter and Krähenbiihl, and also Hartung, used microgravimetric methods to determine the amount of iodine taken up, and obtained curves connecting thickness and time ; these curves do not appear to follow the parabolic equation. All the experimenters mentioned used iodine vapour to attack the silver, but the concentration of iodine in the gas phase was not directly determined. In all cases the surfaces were prepared in air, and the possible effect of exposure to oxygen was not considered; yet in several of the reactions of copper and iron, pre-exposure to air or oxygen is known greatly to modify the result, owing to the fact that an oxide-film may become protective before reaching the thickness needed for interference colours. It may be mentioned that after exposure to vapour, the colour produced on metallic specimens is usually not uniform, but indicates a greater film-thickness near the edge. In the present research, it was decided to use a solution of iodine in an organic solvent; in this case, the concentration could be fixed or varied at will, and in general uniform colouration (indicating uniform thickness) could be obtained. Moreover, abrasion could be conducted, if required, below the surface of the solvent, instead of in air. Chloroform was .found to be a suitable liquid, since, whilst freely dissolving iodine, it had no appreciable solvent action on a silver iodide film.

2016 ◽  
Vol 66 (3) ◽  
Author(s):  
Ning Duan ◽  
Xiaopeng Zhao ◽  
Xiufang Zhao

AbstractIn this paper, we study the existence and uniqueness of global weak solution, the regularity of the solutions and the existence of global attractor for a fourth order parabolic equation modeling epitaxial thin film growth with Neumann boundary conditions in two space dimensions.


1997 ◽  
Vol 467 ◽  
Author(s):  
Fumio Yoshizawa ◽  
Kunihiro Shiota ◽  
Daisuke Inoue ◽  
Jun-ichi Hanna

ABSTRACTPolycrystalline SiGe (poly-SiGe) film growth by reactive thermal CVD with a gaseous mixture of Si2H6 and GeF4 was investigated on various substrates such as Al,Cr, Pt, Si, ITO, ZnO and thermally grown SiO2.In Ge-rich film growth, SEM observation in the early stage of the film growth revealed that direct nucleation of crystallites took place on the substrates. The nucleation was governed by two different mechanisms: one was a heterogeneous nucleation on the surface and the other was a homogeneous nucleation in the gas phase. In the former case, the selective nucleation was observed at temperatures lower than 400°C on metal substrates and Si, where the activation of adsorbed GeF4 on the surface played a major role for the nuclei formation, leading to the selective film growth.On the other hand, the direct nucleation did not always take place in Si-rich film growth irrespective of the substrates and depended on the growth rate. In a growth rate of 3.6nm/min, the high crystallinity of poly-Si0.95Ge0.05in a 220nm-thick film was achieved at 450°C due to the no initial deposition of amorphous tissue on SiO2 substrates.


1995 ◽  
Vol 403 ◽  
Author(s):  
D. V. Dimitrov ◽  
A. S. Murthy ◽  
G. C. Hadjipanayis ◽  
C. P. SWANN

AbstractFe-O and Co-O films were prepared by DC magnetron sputtering in a mixture of Ar and O2 gases. By varying the oxygen to argon ratio, oxide films with stoichiometry FeO, Fe3O4, α-Fe2O3, CoO and Co3O4 were produced. TEM studies showed that the Fe – oxide films were polycrystalline consisting of small almost spherical grains, about 10 nm in size. Co-O films had different microstructure with grain size and shape dependent on the amount of oxygen. X-ray diffraction studies showed that the grains in Fe-O films were randomly oriented in contrast to Co-O films in which a <111> texture was observed. Pure FeO and α-Fe2O3 films were found to be superparamagnetic at room temperature but strongly ferromagnetic at low temperatures in contrast to the antiferromagnetic nature of bulk samples. A very large shift in the hysteresis loop, about 3800 Oe, was observed in field cooled Co-CoO films indicating the presence of a large unidirectional exchange anisotropy.


2021 ◽  
Vol 100 (1) ◽  
pp. 68-73
Author(s):  
Takahiro Gunji ◽  
Kotoe Nakamura ◽  
Ryohei Hayami ◽  
Akihisa Aimi ◽  
Kenjiro Fujimoto ◽  
...  

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