Low-Temperature Annealing of the X-Ray-Induced Volume Expansion and Coloration of LiF

1964 ◽  
Vol 134 (2A) ◽  
pp. A485-A491 ◽  
Author(s):  
S. Mascarenhas ◽  
D. A. Wiegand ◽  
R. Smoluchowski
Keyword(s):  
Low Temperature ◽  
Volume Expansion ◽  
X Ray ◽  
Low Temperature Annealing

scholarly journals Effects of Annealing Temperature on Recrystallization Texture and Microstructure Uniformity of High Purity Tantalum

Metals ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 75 ◽  
Author(s):  
Jialin Zhu ◽  
Chao Deng ◽  
Yahui Liu ◽  
Nan Lin ◽  
Shifeng Liu
Keyword(s):  
Low Temperature ◽  
Electron Backscatter Diffraction ◽  
Stored Energy ◽  
X Ray Diffraction ◽  
Center Layer ◽  
X Ray ◽  
Texture Intensity ◽  
Low Temperature Annealing ◽  
Transmission Electron ◽  
Backscatter Diffraction

One hundred and thirty-five degree clock rolling significantly improves the texture homogeneity of tantalum sheets along the thickness, but a distinctly fragmented substructure is formed within {111} (<111>//normal direction (ND)) and {100} (<100>//ND) deformation grains, which is not suitable to obtain a uniform recrystallization microstructure. Thus, effects of different annealing temperatures on the microstructure and texture heterogeneity of tantalum sheets along the thickness were investigated by X-ray diffraction (XRD), electron backscatter diffraction (EBSD) and transmission electron microscopy (TEM). Results show that the texture distribution along θ-fiber and γ-fiber is irregular and many large grains with {111} orientation develop during annealing at high temperature. However, low-temperature annealing can not only weaken the texture intensity in the surface and the center layer but also introduce a more uniform grain size distribution. This result can be attributed to the subgrain-nucleation-dominated recrystallization mechanism induced by recovery at low temperature, and moreover, a considerable decline of recrystallization driving force resulting from the release of stored energy in the deformation matrix.

Low Temperature Annealing of LPCVD Silicon Films

1987 ◽  
Vol 106 ◽  
Author(s):  
T. Aoyama ◽  
N. Konishi ◽  
T. Suzuki ◽  
K. Miyata
Keyword(s):  
Low Temperature ◽  
Spin Density ◽  
Electron Spin ◽  
High Electron ◽  
X Ray Diffraction ◽  
Electron Spin Density ◽  
X Ray ◽  
Low Temperature Annealing ◽  
Good Crystallinity ◽  
Temperature Electron

ABSTRACTLow temperature, 600°C annealing of LPCVD films was investigated by x-ray diffraction, ESR, TEM, and carrier mobility measurements. An optimum deposition temperature of about 550°C was found to yield good crystallinity and large electron mobility for annealed films; large grain sizes, a maximum crystallite size, and a maximum electron spin density were also observed for films deposited at the optimum temperature. Electron spin density for as-deposited films correlated with the crystalline volume by x-ray diffraction measurements on the films after annealing. This implys that only those amorphous components with high electron spin density can be converted into the crystalline phase by 600°C annealing.

Identification of Cl and Na Impurities in Inclusions of a Vapor-grown CdTe Doped with Zn and Cl

2002 ◽  
Vol 17 (5) ◽  
pp. 1069-1073 ◽  
Author(s):  
V. Corregidor ◽  
V. Babentsov ◽  
M. Fiederle ◽  
T. Feltgen ◽  
K. Benz ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Low Temperature ◽  
Vapor Phase ◽  
Secondary Electron ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Spatially Resolved ◽  
Low Temperature Annealing ◽  
High Concentrations ◽  
Short Time

Morphology and analysis of composition of inclusions were done by secondary electron microscopy and spatially resolved energy-dispersive analysis of x-ray on semiintrinsic CdTe:Cl and CdTe:Zn:Cl crystals grown from the vapor phase by the modified Markov technique and on undoped CdTe crystals grown from the melt by the Bridgman method. In CdTe:Cl and CdTe:Zn:Cl crystals nonstoichiometric inclusions of about 10–20 μm were found, which contain high concentrations of Cl and Na impurities. The Cl is concentrated in small precipitates of 1–2 μm inside these inclusions. After short-time low-temperature annealing (600 °C), the inclusions mostly disappeared.

scholarly journals Особенности фазообразования TbBO-=SUB=-3-=/SUB=- при изотермических отжигах

2019 ◽  
Vol 61 (2) ◽  
pp. 340
Author(s):  
И.М. Шмытько
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Annealing Temperature ◽  
Initial Mixture ◽  
Amorphous Precursor ◽  
Two Phase ◽  
X Ray ◽  
Annealing Temperatures ◽  
Low Temperature Annealing ◽  
Hypothetical Explanation

AbstractDetailed X-ray studies of changes in the structure of terbium orthoborate TbBO_3 in the course of successive high-temperature isothermal annealing of the initial mixture in the form of an amorphous precursor and in the form of a homogenized mixture of microcrystalline Tb_7O_12 and B_2O_3 powders have been carried out. It is shown that the formation of TbBO_3 crystals in both cases occurs through the formation of intermediate two-phase states. Particularly, the triclinic high-temperature ν-TbBO_3 phase is formed already at the first crystallization stages (about 600°C) almost simultaneously with the equilibrium vaterite modification of TbBO_3 (sp. gr. P 63/ mmc ) during low-temperature annealing of an amorphous precursor, which transforms into the vaterite modification at an annealing temperature of 850°C. The phase of monoclinic terbium trioxoborate TbB_3O_6 is formed at the first stages of phase formation (about 800°C) almost simultaneously with the vaterite phase when the feedstock is annealed in the form of a homogenized mixture of microcrystalline Tb_7O_12 and B_2O_3 powders. It also transforms into the vaterite modification at an annealing temperature of 950°, which is preserved up to the highest annealing temperatures in the experiment (1200°C). A hypothetical explanation of the formation of such two-phase states during low-temperature annealing of the feedstock and their disappearance at higher annealing temperatures is proposed.

Volume Expansion and Color Center Behavior of NaCl X-Ray Irradiated at Low Temperature

1964 ◽  
Vol 134 (2A) ◽  
pp. A481-A485 ◽  
Author(s):  
S. Mascarenhas ◽  
D. A. Wiegand ◽  
R. Smoluchowski
Keyword(s):  
Low Temperature ◽  
Color Center ◽  
Volume Expansion ◽  
X Ray

Morphology of Fe nanolayers with Pt overlayers on low-temperature annealing

2016 ◽  
Vol 49 (5) ◽  
pp. 1682-1692 ◽  
Author(s):  
Jing Gong ◽  
Neelima Paul ◽  
Béla Nagy ◽  
Miklós Dolgos ◽  
László Bottyán ◽  
...  
Keyword(s):  
Low Temperature ◽  
Grain Morphology ◽  
Grazing Incidence ◽  
Correlation Lengths ◽  
X Ray ◽  
Grain Sizes ◽  
Agglomeration Process ◽  
Low Temperature Annealing ◽  
X Ray Scattering ◽  
Transmission Electron

Agglomeration or dewetting is technologically important in the microelectronics industry as it is one of the methods of producing arrays of nanosized metal clusters. This report investigates the grain morphology evolution due to low-temperature annealing (473 K) in Fe layers with Pt overlayers. X-ray diffuse scattering and grazing-incidence small-angle X-ray scattering (GISAXS) have been used to access different correlation lengths and correlate them with grain sizes from transmission electron microscopy. Overall, the GISAXS data indicate that the nanoparticles or nanoclusters in the samples appear as bimodal distributions. It is shown that, for an Fe layer with vertical grain sizes of 5 and 11 nm, irrespective of cluster size, there is no signature of agglomeration between the Fe and Pt layers even with very long annealing times (3000 min). The vertical grain sizes are mediated by the film thickness. Furthermore, an alternating variation with grain sizes of 4 and 7 nm is achieved by Al doping, but without a restriction on the Fe layer thickness. Even in this case, the agglomeration process is seen to remain unaffected by annealing for the same time durations, but only for the larger sized nanoclusters. The smaller ones are seen to grow in size, with increased correlation lengths for the maximum annealing time owing to higher surface energy.

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