Scaling of surface roughness in a heterogeneous film growth system:GexSi1−xon Si

1996 ◽  
Vol 53 (12) ◽  
pp. R7610-R7613 ◽  
Author(s):  
Chung-Yu Mou ◽  
J. W. P. Hsu
Keyword(s):  
Surface Roughness ◽  
Film Growth ◽  
Heterogeneous Film

Regulation of film thickness, surface roughness and porosity in thin film growth using deposition rate

2009 ◽  
Vol 64 (17) ◽  
pp. 3903-3913 ◽  
Author(s):  
Gangshi Hu ◽  
Gerassimos Orkoulas ◽  
Panagiotis D. Christofides
Keyword(s):  
Thin Film ◽  
Surface Roughness ◽  
Film Thickness ◽  
Deposition Rate ◽  
Film Growth ◽  
Thin Film Growth

THE INFLUENCE OF THE SURFACE ORIENTATION ON THE MORPHOLOGY DURING HOMOEPITAXIAL GROWTH OF NICKEL BY MOLECULAR DYNAMICS SIMULATION

2017 ◽  
Vol 24 (02) ◽  
pp. 1750019 ◽  
Author(s):  
A. HASSANI ◽  
A. MAKAN ◽  
K. SBIAAI ◽  
A. TABYAOUI ◽  
A. HASNAOUI
Keyword(s):  
Molecular Dynamics ◽  
Surface Roughness ◽  
Film Growth ◽  
Deposition Process ◽  
Dynamics Simulation ◽  
Appearance Time ◽  
Homoepitaxial Growth ◽  
Embedded Atom ◽  
Upper Level ◽  
The One

Homoepitaxial growth film for (001), (110) and (111) Ni substrates is investigated by means of molecular dynamics (MD) simulation. Embedded atom method (EAM) is considered to represent the interaction potential between nickel atoms. The simulation is performed at 300[Formula: see text]K using an incident energy of 0.06[Formula: see text]eV. In this study, the deposition process is performed periodically and the period, [Formula: see text], is relative to a perfect layer filling. The coverage rate of the actual expected level, [Formula: see text], can be considered a determinant for thin-film growth of nickel. The [Formula: see text] level is the most filled level during the deposition on (001) substrate, while it is the less filled one in the case of (111) substrate. Moreover, the upper level is the one which is responsible for the surface roughness and the appearance time of an upper layer may also be a factor influencing the surface roughness. The deposition on (111) substrate induces the most rigorous surface with a rapid appearance time of the upper layers. The [Formula: see text] layers are almost completely filled for all substrates. The [Formula: see text] and lower layers are completely filled for (001) and (110) substrates while for (111) substrate the completely filled layers are [Formula: see text] and lower ones.

scholarly journals A SIMPLE SOLID-ON-SOLID MODEL OF EPITAXIAL FILM GROWTH: SURFACE ROUGHNESS AND DYNAMICS

1999 ◽  
Vol 10 (04) ◽  
pp. 645-657 ◽  
Author(s):  
K. MALARZ ◽  
A. Z. MAKSYMOWICZ
Keyword(s):  
Surface Roughness ◽  
Film Growth ◽  
Growth Models ◽  
Limited Range ◽  
Growth Exponent ◽  
Growth Surface ◽  
Model Calculations ◽  
Surface Migration ◽  
Two Factors ◽  
Epitaxial Film Growth

The random deposition model must be enhanced to reflect the variety of surface roughness due to some material characteristics of the film growing by vacuum deposition or sputtering. The essence of the computer simulation in this case is to account for possible surface migration of atoms just after the deposition, in connection with the binding energy between atoms (as the mechanism provoking the diffusion) and/or diffusion energy barrier. The interplay of these two factors leads to different morphologies of the growing surfaces, from flat and smooth ones to rough and spiky ones. In this paper, we extended our earlier calculation by applying an extra diffusion barrier at the edges of terrace-like structures, known as the Ehrlich–Schwoebel barrier. It is experimentally observed that atoms avoid descending when the terrace edge is approached, and these barriers mimic this tendency. Results of our Monte Carlo computer simulations are discussed in terms of surface roughness, and compared with other model calculations and some experiments from literature. The power law of the surface roughness σ against film thickness t was confirmed. The nonzero minimum value of the growth exponent β near 0.2 was obtained which is due to the limited range of the surface diffusion and the Ehrlich–Schwoebel barrier. Observations for different diffusion ranges are also discussed. The results are also confirimed with some deterministic growth models.

scholarly journals Growth of Atomic Layer Deposited Ruthenium and Its Optical Properties at Short Wavelengths Using Ru(EtCp)2 and Oxygen

Coatings ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 413 ◽  
Author(s):  
Robert Müller ◽  
Lilit Ghazaryan ◽  
Paul Schenk ◽  
Sabrina Wolleb ◽  
Vivek Beladiya ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Optical Properties ◽  
Deposition Temperature ◽  
Film Growth ◽  
High Surface ◽  
Atomic Layer ◽  
Fused Silica ◽  
High Density ◽  
Adhesion Properties

High-density ruthenium (Ru) thin films were deposited using Ru(EtCp)2 (bis(ethylcyclopentadienyl)ruthenium) and oxygen by thermal atomic layer deposition (ALD) and compared to magnetron sputtered (MS) Ru coatings. The ALD Ru film growth and surface roughness show a significant temperature dependence. At temperatures below 200 °C, no deposition was observed on silicon and fused silica substrates. With increasing deposition temperature, the nucleation of Ru starts and leads eventually to fully closed, polycrystalline coatings. The formation of blisters starts at temperatures above 275 °C because of poor adhesion properties, which results in a high surface roughness. The optimum deposition temperature is 250 °C in our tool and leads to rather smooth film surfaces, with roughness values of approximately 3 nm. The ALD Ru thin films have similar morphology compared with MS coatings, e.g., hexagonal polycrystalline structure and high density. Discrepancies of the optical properties can be explained by the higher roughness of ALD films compared to MS coatings. To use ALD Ru for optical applications at short wavelengths (λ = 2–50 nm), further improvement of their film quality is required.

On the Surface Roughness Evolution During a-Si:H Growth

2002 ◽  
Vol 715 ◽  
Author(s):  
M.C.M. van de Sanden ◽  
A.H.M. Smets ◽  
W.M.M. Kessels
Keyword(s):  
Activation Energy ◽  
Surface Roughness ◽  
Film Growth ◽  
Chemical Deposition ◽  
Universality Class ◽  
Growth Exponent ◽  
Mbe Growth ◽  
Universality Classes ◽  
Deposition Conditions ◽  
Surface Roughness Evolution

AbstractThe surface roughness evolution during a-Si:H film growth from a SiH3 beam under purely chemical deposition conditions is discussed. The data is explained in terms of the different universality classes proposed in literature. It is argued that roughness evolution during a-Si:H growth shows great similarity with MBE growth, which belongs to a universality class studied extensively by Das Sarma and coworkers. The activation energy for surface diffusion extracted from simulating the growth exponent β vs. temperature reveals an activation energy of about 1 eV. This result suggests that the surface roughness evolution is not controlled by the weakly adsorbed SiH3 radical.

The Growth, Surface Topography and Curie Temperature in Ni Thin Films: Kinetic Lattice Monte Carlo Simulation

2010 ◽  
Vol 150-151 ◽  
pp. 493-498
Author(s):  
Ling Jun Zeng ◽  
Shuang Juan Shen ◽  
Qian Feng ◽  
Jian Min Zhang ◽  
Zhi Gao Chen ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Monte Carlo ◽  
Curie Temperature ◽  
Film Growth ◽  
Growth Surface ◽  
Lattice Monte Carlo ◽  
The Mean ◽  
Mc Simulation ◽  
Curie Temperatures ◽  
Curie Temperature Tc

Based on the Monte Carlo (MC) simulation, the film growth and magnetic properties of Ni (100) films are investigated. The simulated results indicate that the surface roughness of the Ni films drops with the increase of the substrate temperature and the decrease of the deposition rate. The Curie temperature Tc is greatly influenced by the surface roughness and size of Ni films. Moreover, it is found that the Curie temperatures of the films are related to the mean coordination number Z and the surface roughness r. The simulated results explain the experimental facts well.

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