Domain structure of0.8Pb(Mg1/3Nb2/3)O3−0.2PbTiO3studied by piezoresponse force microscopy

2004 ◽  
Vol 69 (1) ◽  
Author(s):  
V. V. Shvartsman ◽  
A. L. Kholkin
Materials ◽  
2019 ◽  
Vol 12 (8) ◽  
pp. 1327 ◽  
Author(s):  
Ursic ◽  
Bencan ◽  
Prah ◽  
Dragomir ◽  
Malic

A complex domain structure with variations in the morphology is observed at ambient temperature in monoclinic Pb(Fe1/2Nb1/2)O3. Using electron microscopy and piezoresponse force microscopy, it is possible to reveal micrometre-sized wedge, lamellar-like, and irregularly shaped domains. By increasing the temperature, the domain structure persists up to 80 °C, and then starts to disappear at around 100 °C due to the proximity of the ferroelectric–paraelectric phase transition, in agreement with macroscopic dielectric measurements. In order to understand to what degree domain switching can occur in the ceramic, the mobility of the domain walls was studied at ambient temperature. The in situ poling experiment performed using piezoresponse force microscopy resulted in an almost perfectly poled area, providing evidence that all types of domains can be easily switched. By poling half an area with 20 V and the other half with −20 V, two domains separated by a straight domain wall were created, indicating that Pb(Fe1/2Nb1/2)O3 is a promising material for domain-wall engineering.


2005 ◽  
Vol 902 ◽  
Author(s):  
Hong Liu ◽  
Zhaohui Pu ◽  
Zhihong Wang ◽  
Huidong Huang ◽  
Yanrong Li ◽  
...  

AbstractLanthanum-modified lead titanate (PLT) ferroelectric thin films were fabricated by the RF magnetron sputtering system on Pt/Ti/SiO2/Si(100) substrates. The x-ray diffraction (XRD) patterns of the PLT films showed that the pure perovskite structure was formed in the PLT thin films. The Piezoresponse Force Microscopy (PFM) was used for determining the domain structure of these films. It was found that the 90 degree domain was the main domain structure of PLT thin films. It was found that the PLT films prepared by RF sputtering have relatively large pyroelectric coefficient γ=2.20×10-8C·(cm2·K)-1 and relatively high figures of merit for current responsivity, voltage responsivity and specific detectivity.


2012 ◽  
Vol 57 (6) ◽  
pp. 781-784 ◽  
Author(s):  
D. A. Kiselev ◽  
A. S. Bykov ◽  
R. N. Zhukov ◽  
V. V. Antipov ◽  
M. D. Malinkovich ◽  
...  

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