Temperature-dependent electron and hole transport in disordered semiconducting polymers: Analysis of energetic disorder

Semiconducting polymers have the potential to be used in thermoelectric devices that are lightweight, flexible, and fabricated using solution processing. Because of the structural and energetic disorder of these polymers, the relationship between their structure and thermoelectric properties is complex. We review how interrelated processing routes and doping methods affect the thermoelectric properties of polymers. The studies highlighted here have led to correlations between thermopower and electrical conductivity that can be described by theories under investigation. With greater understanding of the materials properties behind their performance, semiconducting polymers can be used in future power generation or cooling devices.

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Origin of temperature-dependent performance of hole-transport-layer-free perovskite solar cells doped with CuSCN

Organic Electronics ◽

10.1016/j.orgel.2020.105958 ◽

2020 ◽

Vol 87 ◽

pp. 105958 ◽

Cited By ~ 1

Author(s):

Donghee Kang ◽

Dongguen Shin ◽

Kyu-Joon Lee ◽

Soohyung Park ◽

Jae-Pyoung Ahn ◽

...

Keyword(s):

Solar Cells ◽

Perovskite Solar Cells ◽

Hole Transport ◽

Transport Layer ◽

Hole Transport Layer ◽

Temperature Dependent

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Charge Carrier Mobility Measurements in Tetracene Single Crystals

MRS Proceedings ◽

10.1557/proc-871-i7.2 ◽

2005 ◽

Vol 871 ◽

Cited By ~ 1

Author(s):

Jens Pflauma ◽

Jens Niemax ◽

Ashutosh Kumar Tripathi

Keyword(s):

Deep Level ◽

Hole Mobility ◽

Charge Carrier Mobility ◽

Hole Transport ◽

Charge Carriers ◽

Dispersive Transport ◽

Temperature Dependent ◽

Trap Energy ◽

Multiple Trapping ◽

Structural Imperfections

AbstractWe present data on the transport of charge carriers in the organic semiconductor tetracene. Comparative measurements by time-of-flight (TOF) spectroscopy and measurements in field-effect transistor (FET) geometry reveal hole mobilities of about 1 cm2/Vs. Whereas for FETs only hole transport can be detected, from TOF a strong dispersive transport for negative charge carriers is observed. This observation is mainly caused by deep-level trapping of electrons. By fitting the temperature dependent hole mobility to a model of multiple-trapping and release of charge carriers the trap energy and the relative trap density can be adjusted to 130 meV and 5·10-3, respectively. Comparative chemical and structural analysis of inhomogeneities show that the traps affecting the transport are mainly caused by chemical defects rather than by structural imperfections.

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Evaluating the role of energetic disorder and thermal activation in exciton transport

Journal of Materials Chemistry C ◽

10.1039/c6tc00525j ◽

2016 ◽

Vol 4 (16) ◽

pp. 3437-3442 ◽

Cited By ~ 10

Author(s):

S. Matthew Menke ◽

Russell J. Holmes

Keyword(s):

Organic Semiconductors ◽

Thermal Activation ◽

Diffusion Length ◽

Temperature Dependent ◽

Exciton Diffusion ◽

Exciton Diffusion Length ◽

Exciton Transport ◽

Energetic Disorder ◽

Boron Subphthalocyanine

Temperature dependent measurements of the exciton diffusion length (LD) are performed for three archetypical small-molecule, organic semiconductors: aluminum tris-(8-hydroxyquinoline) (Alq3), dicyanovinyl-terthiophene (DCV3T), and boron subphthalocyanine chloride (SubPc).

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