scholarly journals Accurate Measurement of the Gap of Graphene/h−BN Moiré Superlattice through Photocurrent Spectroscopy

2021 ◽  
Vol 126 (14) ◽  
Author(s):  
Tianyi Han ◽  
Jixiang Yang ◽  
Qihang Zhang ◽  
Lei Wang ◽  
Kenji Watanabe ◽  
...  
2005 ◽  
Vol 36 (3-6) ◽  
pp. 227-230 ◽  
Author(s):  
H. Pettersson ◽  
L. Landin ◽  
Ying Fu ◽  
M. Kleverman ◽  
M. Borgström ◽  
...  

2004 ◽  
Vol 13 (10) ◽  
pp. 1785-1790 ◽  
Author(s):  
R. Kravets ◽  
M. Vanecek ◽  
C. Piccirillo ◽  
A. Mainwood ◽  
M.E. Newton

2016 ◽  
Vol 93 (23) ◽  
Author(s):  
Y. Zhang ◽  
K. Shibata ◽  
N. Nagai ◽  
C. Ndebeka-Bandou ◽  
G. Bastard ◽  
...  

1989 ◽  
Vol 149 ◽  
Author(s):  
G. H. Bauer ◽  
C. E. Nebel ◽  
M. B. Schubert ◽  
G. Schumm

ABSTRACTOptical and transport studies of both cb- and vb-tail states in a-Si1−xGex:H such as subband absorption (PDS), instationary photocurrent experiments (TOF, PTS) for electrons and holes, Modulated Photocurrent Spectroscopy (MPS), and Raman scattering have been performed. The main consequences of Ge-alloying into the a-Si:H network are i) an increase in cb-tail state density at the conduction band edge and in the exponential cb- tail even for small x (O<x<0.3), accompanied by ii) a rise in deep cb-tail and midgap states which to some extent can be reduced by appropriate deposition methods; iii) at the valence band side up to x≈0.3 the tail seems not to be affected at all and for 0.3<x<0.9 the vb-tail obviously can be kept similar to that of a-Si:H (Evo≈(50–60) meV). Halfwidths of Raman TO-like modes point to the existence of a rigid Si-network in O<x<0.3 in which Ge is incorporated and to a transition at x>0.35 into a Si-Ge compound structure with maximum disorder at x≈0.5.


2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Kanishka Kobbekaduwa ◽  
Shreetu Shrestha ◽  
Pan Adhikari ◽  
Exian Liu ◽  
Lawrence Coleman ◽  
...  

AbstractWe in-situ observe the ultrafast dynamics of trapped carriers in organic methyl ammonium lead halide perovskite thin films by ultrafast photocurrent spectroscopy with a sub-25 picosecond time resolution. Upon ultrafast laser excitation, trapped carriers follow a phonon assisted tunneling mechanism and a hopping transport mechanism along ultra-shallow to shallow trap states ranging from 1.72–11.51 millielectronvolts and is demonstrated by time-dependent and independent activation energies. Using temperature as an energetic ruler, we map trap states with ultra-high energy resolution down to < 0.01 millielectronvolt. In addition to carrier mobility of ~4 cm2V−1s−1 and lifetime of ~1 nanosecond, we validate the above transport mechanisms by highlighting trap state dynamics, including trapping rates, de-trapping rates and trap properties, such as trap density, trap levels, and capture-cross sections. In this work we establish a foundation for trap dynamics in high defect-tolerant perovskites with ultra-fast temporal and ultra-high energetic resolution.


ACS Nano ◽  
2014 ◽  
Vol 8 (9) ◽  
pp. 9324-9331 ◽  
Author(s):  
Michael Engel ◽  
Katherine E. Moore ◽  
Asiful Alam ◽  
Simone Dehm ◽  
Ralph Krupke ◽  
...  

2012 ◽  
Vol 101 (3) ◽  
pp. 031110 ◽  
Author(s):  
A. Mohan ◽  
L. Nevou ◽  
P. Gallo ◽  
B. Dwir ◽  
A. Rudra ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document