Band structure effects of transport properties in icosahedral quasicrystals

1993 ◽  
Vol 71 (25) ◽  
pp. 4166-4169 ◽  
Author(s):  
Takeo Fujiwara ◽  
Susumu Yamamoto ◽  
Guy Trambly de Laissardière
Keyword(s):  
Band Structure ◽  
Transport Properties ◽  
Icosahedral Quasicrystals

Effect of Electron-Phonon Coupling on Transport Properties of Monolayers of ZrS2, BiI3 and PbI2: A thermoelectric Perspective

2021 ◽  
Author(s):  
Gautam Sharma ◽  
Vineet Kumar Pandey ◽  
Shouvik Datta ◽  
Prasenjit Ghosh
Keyword(s):  
Relaxation Time ◽  
Band Structure ◽  
Transport Properties ◽  
Thermoelectric Properties ◽  
Thermoelectric Materials ◽  
Waste Heat ◽  
Transport Coefficients ◽  
Electrical Energy ◽  
Phonon Coupling ◽  
Electron Phonon Coupling

Thermoelectric materials are used for conversion of waste heat to electrical energy. The transport coefficients that determine their thermoelectric properties depend on the band structure and the relaxation time of...

scholarly journals Electronic Band Structure and Transport Properties of the Cluster Compound Ag3Tl2Mo15Se19

2019 ◽  
Vol 58 (9) ◽  
pp. 5533-5542 ◽  
Author(s):  
Patrick Gougeon ◽  
Philippe Gall ◽  
Rabih Al Rahal Al Orabi ◽  
Benoit Boucher ◽  
Bruno Fontaine ◽  
...  
Keyword(s):  
Band Structure ◽  
Transport Properties ◽  
Electronic Band Structure ◽  
Cluster Compound ◽  
Electronic Band

Band Structure and High-Field Transport Properties of InP

1970 ◽  
Vol 1 (10) ◽  
pp. 3998-4004 ◽  
Author(s):  
L. W. James ◽  
J. P. Van Dyke ◽  
F. Herman ◽  
D. M. Chang
Keyword(s):  
Band Structure ◽  
Transport Properties ◽  
High Field

scholarly journals Analyzing transport properties of p-type Mg2Si–Mg2Sn solid solutions: optimization of thermoelectric performance and insight into the electronic band structure

2019 ◽  
Vol 7 (3) ◽  
pp. 1045-1054 ◽  
Author(s):  
Hasbuna Kamila ◽  
Prashant Sahu ◽  
Aryan Sankhla ◽  
Mohammad Yasseri ◽  
Hoang-Ngan Pham ◽  
...  
Keyword(s):  
Band Structure ◽  
Transport Properties ◽  
Carrier Concentration ◽  
Solid Solutions ◽  
Figure Of Merit ◽  
Electronic Band Structure ◽  
Thermoelectric Performance ◽  
Electronic Band ◽  
P Type ◽  
Insight Into

Figure of merit zT mapping of p-Mg2Si1−xSnx with respect to carrier concentration.

scholarly journals Electronic stripes and transport properties in borophene heterostructures

Nanoscale ◽  
2019 ◽  
Vol 11 (38) ◽  
pp. 17894-17903 ◽  
Author(s):  
G. H. Silvestre ◽  
Wanderlã L. Scopel ◽  
R. H. Miwa
Keyword(s):  
Band Structure ◽  
Fermi Level ◽  
Transport Properties ◽  
Electronic Band Structure ◽  
Electronic States ◽  
Electronic Band

(Left) Localization of the electronic states near the Fermi level, and the electronic band structure projected on the S1 and S2 stripes. (Right) Transmission probabilites parallel (y) and perpendicular (x) to the S1/S2 borophene superlattice.

EFFECTIVE MOBILITY MODEL OF GRAPHENE NANORIBBON IN PARABOLIC BAND ENERGY

2011 ◽  
Vol 25 (10) ◽  
pp. 739-745 ◽  
Author(s):  
N. A. AMIN ◽  
M. T. AHMADI ◽  
Z. JOHARI ◽  
S. M. MOUSAVI ◽  
R. ISMAIL
Keyword(s):  
Experimental Data ◽  
Band Structure ◽  
Transport Properties ◽  
Conventional Method ◽  
Dirac Point ◽  
Graphene Nanoribbons ◽  
Mobility Model ◽  
Band Energy ◽  
One Dimensional ◽  
Effective Mobility

In this letter, we investigate the transport properties of one-dimensional semiconducting Graphene nanoribbons (GNRs) with parabolic band structure near the Dirac point. The analytical model of effective mobility is developed by using the conductance approach, which differs from the conventional method of extracting the effective mobility using the well-known Matthiessen rule. Graphene nanoribbons conductance model developed was applied in the Drude model to obtain the effective mobility, which then gives nearly close comparison with the experimental data.

Computational Analysis of Strain Effects on Electrical Transport Properties of Crystalline Nanocomposite Thin Films

2011 ◽  
Author(s):  
Hua Li ◽  
Gang Li
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Band Structure ◽  
Transport Properties ◽  
Electrical Transport ◽  
Electronic Band Structure ◽  
Electrical Transport Properties ◽  
Electronic Band ◽  
Strain Effects ◽  
Nanocomposite Thin Films

In this work, we model the strain effects on the electrical transport properties of Si/Ge nanocomposite thin films. We utilize a two-band k·p theory to calculate the variation of the electronic band structure as a function of externally applied strains. By using the modified electronic band structure, electrical conductivity of the Si/Ge nanocomposites is calculated through a self-consistent electron transport analysis, where a nonequilibrium Green’s function (NEGF) is coupled with the Poisson equation. The results show that both the tensile uniaxial and biaxial strains increase the electrical conductivity of Si/Ge nanocomposite. The effects are more evident in the biaxial strain cases.

The Electrical Resistivity, Thermal Conductivity, and Thermoelectric Power of Calcium from 30 K to 300 K

1975 ◽  
Vol 53 (5) ◽  
pp. 486-497 ◽  
Author(s):  
J. G. Cook ◽  
M. J. Laubitz ◽  
M. P. Van der Meer
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Band Structure ◽  
Large Deviations ◽  
Transport Properties ◽  
Thermoelectric Power ◽  
Band Model ◽  
Residual Resistance ◽  
Two Samples ◽  
Two Band Model

Data are presented for the thermal and electrical resistivity and thermoelectric power of two samples of Ca (having residual resistance ratios of 10 and 70) between 30 and 300 K. Large deviations from both Matthiessen's rule and the Wiedemann–Franz relationship are observed. The former are tentatively attributed to the presence of two distinct groups of carriers in Ca, and analyzed using the two band model. The latter deviations are interpreted as the effects of band structure. The thermoelectric power of Ca is large. In many respects the transport properties of Ca appear to be similar to those of the transition metals.

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