Frost Heave Dynamics at a Single Crystal Interface

1995 ◽  
Vol 74 (25) ◽  
pp. 5076-5079 ◽  
Author(s):  
L. A. Wilen ◽  
J. G. Dash
Keyword(s):  
Single Crystal ◽  
Frost Heave ◽  
Crystal Interface

Ion Induced Damage and their Annealing in LiTaO3 Single Crystal

1995 ◽  
Vol 396 ◽  
Author(s):  
Z Zhang ◽  
I.A. Rusakova ◽  
W.K. Chu
Keyword(s):  
Curie Temperature ◽  
Single Crystal ◽  
Single Crystals ◽  
Thermal Annealing ◽  
Crystalline Structure ◽  
Room Temperature ◽  
Complete Recovery ◽  
Oxygen Ions ◽  
Annealing Temperatures ◽  
Crystal Interface

AbstractLiTaO3 single crystals have been implanted with 100 keV oxygen ions at room temperature with doses of 1×1014 /cm2,6xl014/cm2,1.2x1015/cm2, 6xl015/cm2, and 2xl016/cm2. Annealing temperatures ranged from 550 °C to 1075 °C. RBS-channeling and TEM were used for characterization. For partially damaged samples, complete recovery of the crystalline structure was achieved after annealing at 550 °C, which is below the Curie temperature. For totally amorphized samples, thermal annealing induced multidomain growth. These domains extend beyond the original amorphous/crystal interface deep into bulk (1 – 1.5 μm ).

Exchange bias in structure-phase separated K0.8Fe2−xNixSe2 (x=0.015) single crystal: Interface evidence

2012 ◽  
Vol 324 (19) ◽  
pp. 3058-3064 ◽  
Author(s):  
Mingtao Li ◽  
Zhenjie Feng ◽  
Huiling Yu ◽  
Dongmei Deng ◽  
Baojuan Kang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Exchange Bias ◽  
Structure Phase ◽  
Crystal Interface

scholarly journals Piezotronic effect at Schottky barrier of a metal-ZnO single crystal interface

2017 ◽  
Vol 121 (15) ◽  
pp. 155701 ◽  
Author(s):  
Peter Keil ◽  
Till Frömling ◽  
Andreas Klein ◽  
Jürgen Rödel ◽  
Nikola Novak
Keyword(s):  
Single Crystal ◽  
Schottky Barrier ◽  
Piezotronic Effect ◽  
Zno Single Crystal ◽  
Crystal Interface

Electrochemistry of the I-on-Pd single-crystal interface: studies by UHV-EC and in situ STM

1995 ◽  
Vol 335 ◽  
pp. 273-280 ◽  
Author(s):  
M.P. Soriaga ◽  
J.A. Schimpf ◽  
A. Carrasquillo ◽  
J.B. Abreu ◽  
W. Temesghen ◽  
...  
Keyword(s):  
Single Crystal ◽  
In Situ Stm ◽  
Crystal Interface

Amorphous Germanium Crystallization Processes in Multi-Pulse Low Power Laser Irradiation

1981 ◽  
Vol 4 ◽  
Author(s):  
M. Bertolotti ◽  
G. Vitali ◽  
U. Zammit ◽  
M. Marinelli
Keyword(s):  
Glow Discharge ◽  
Low Power ◽  
Single Crystal ◽  
Laser Irradiation ◽  
Amorphous Material ◽  
Pulse Irradiation ◽  
Power Laser ◽  
Amorphous Germanium ◽  
Melting Mechanism ◽  
Crystal Interface

ABSTRACTThe regrowing features of disordered germanium under low power multi-pulse irradiation are discussed. It is shown that implanted amorphous germanium starts the regrowth from the specimen surface while glow-discharge amorphous material starts from the amorphous-single crystal interface. Evidence against a melting mechanism in the case of multi-pulse irradiation are also presented.

scholarly journals Optimal Magnetic Graphite Heater Design for Impurity Control in Single-Crystal Si Grower Using Crystal Growth Simulation

Processes ◽  
2021 ◽  
Vol 10 (1) ◽  
pp. 70
Author(s):  
Hye Jun Jeon ◽  
Hyeonwook Park ◽  
Salh Alhammadi ◽  
Jae Hak Jung ◽  
Woo Kyoung Kim
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Molten State ◽  
Growth Simulation ◽  
Impurity Control ◽  
Average Oxygen Concentration ◽  
Heater Design ◽  
Oxygen Impurities ◽  
Crystal Interface ◽  
Coil Shape

In this paper, we report a successfully modified single-crystal Si growth furnace for impurity control. Four types of arbitrary magnetic heater (AMGH) systems with 3, 4, 5, and poly parts were designed in a coil shape and analyzed using crystal growth simulation. The concentration of oxygen impurities in single-crystal Si ingots was compared among the designed AMGHs and a normal graphite heater (NGH). The designed AMGHs were confirmed to be able to control turbulence and convection in a molten state, which created a vortex that influenced the oxygen direction near the melt–crystal interface. It was confirmed that replacing NGH with AMGHs resulted in a reduction in the average oxygen concentration at the Si melt–crystal interface by approximately 4.8%.

Seeded Crystal Growth of Yba2Cu3O6.5 in Semisolid Melts

1997 ◽  
Vol 12 (4) ◽  
pp. 880-890 ◽  
Author(s):  
S. Honjo ◽  
M. J. Cima ◽  
M. C. Flemings ◽  
T. Ohkuma ◽  
H. Shen ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystals ◽  
Particle Concentration ◽  
Volume Fraction ◽  
Isothermal Solidification ◽  
The Other ◽  
Oxide Content ◽  
Particle Segregation ◽  
Crystal Interface

Melt textured single crystals of YBa2Cu3O6.5 (123) superconductors were produced by isothermal solidification from a semisolid melt using single crystal NdBa2Cu3O6.5 or SmBa2Cu3O6.5 seeds. The microstructure within the single crystals shows an inhomogeneous segregation of Y2BaCO5 (211) particles trapped in the 123 crystals during solidification. The concentration of 211 particles varies with the crystal axes in 123 crystals produced from precursors with compositions of 80 wt.% 123 powder and 20 wt.% excess 211. The 211 particle concentration along the c-axis in the crystal is much lower than that along the a- or b-axes during initial crystallization. This concentration increases in both directions as the crystal grows larger. The 211 concentration along the c-axis increases more quickly than the concentration along the other axes during solidification, which allows the 211 concentration to approach that on the other axes as the solidification continues. 211 particle segregation in stoichiometric 123 samples formed “X”-shaped tracks instead of the variations in 211 concentration described above. A single crystal growth model of 123 is proposed and employed to interpret these experimental observations. Quenched samples were prepared to investigate the volume fraction of 211 particles in the liquid phase. A constant distribution of 211 particles was observed in the liquid, except very near the crystal interface, where the 211 concentration decreased rapidly. Copper oxide content in the liquid was also measured. It is found that the copper content is lower at the (001) interface compared with (100) or (010) interfaces.

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