Primary damage production in the presence of extended defects and growth of vacancy-type dislocation loops in hcp zirconium

Oxygen precipitation in Si is a complex set of processes which has been studied over many years. Here we review theoretical work relating to the precipitation process. At temperatures around 450°C oxygen atoms become mobile and form a family of thermal double donors. The structure of these defects and the origin of their electrical activity is discussed. At temperature around 650°C these donors disappear and there is a growth of SiO2 precipitates along with rod like defects which are extended defects involving Si interstitials. At higher temperatures these collapse into dislocation loops. The structure and electrical properties of the rod like defect are described and compared with those of dislocations.

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In-situ study of one-dimensional motion of interstitial-type dislocation loops in hydrogen-ion-implanted aluminum

Acta Physica Sinica ◽

10.7498/aps.71.20211229 ◽

2022 ◽

Vol 71 (1) ◽

pp. 016102-016102

Author(s):

Li Ran-Ran ◽

◽

Zhang Yi-Fan ◽

Yin Yu-Peng ◽

Watanabe Hideo ◽

...

Keyword(s):

Hydrogen Ion ◽

Dislocation Loops ◽

One Dimensional ◽

Type Dislocation ◽

Ion Implanted

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Effects of chromium on the one-dimensional motion of interstitial-type dislocation loops in iron

Journal of Nuclear Materials ◽

10.1016/j.jnucmat.2004.04.263 ◽

2004 ◽

Vol 329-333 ◽

pp. 1194-1198 ◽

Cited By ~ 60

Author(s):

K Arakawa ◽

M Hatanaka ◽

H Mori ◽

K Ono

Keyword(s):

Dislocation Loops ◽

One Dimensional ◽

Type Dislocation ◽

The One

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Freezing of Interstitial-Type Dislocation Loops Grown as Vacancy Sources in Nearly Perfect Aluminum Crystals

Journal of the Physical Society of Japan ◽

10.1143/jpsj.64.699 ◽

1995 ◽

Vol 64 (3) ◽

pp. 699-701 ◽

Cited By ~ 1

Author(s):

Kaoru Mizuno ◽

Kotaro Ono ◽

Kazuyoshi Ito ◽

Takao Kino

Keyword(s):

Dislocation Loops ◽

Type Dislocation

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On the Energetics of Extrinsic Defects in Si and their Role in Nonequilibrium Dopant Diffusion

MRS Proceedings ◽

10.1557/proc-610-b11.6 ◽

2000 ◽

Vol 610 ◽

Cited By ~ 1

Author(s):

Alain Claverie ◽

Filadelfo Cristiano ◽

Benjamin Colombeau ◽

Nicholas Cowern

Keyword(s):

Formation Energy ◽

Ostwald Ripening ◽

High Dose ◽

Extended Defects ◽

Dislocation Loops ◽

Dynamical Equilibrium ◽

Defect Interactions ◽

Small Clusters ◽

Dose Levels ◽

Extrinsic Defects

AbstractIn this paper, we discuss the mechanisms by which small clusters evolve through “magic” sizes into {113} defects and then, at sufficiently high dose levels, transform into dislocation loops of two types. This ripening process is mediated by the interchange of free Si(int)s between different extended defects, leading to a decrease of their formation energy. The calculation of the supersaturation of free Si-interstitials in dynamical equilibrium with these defects shows a hierarchy of levels of nonequilibrium diffusion, ranging from supersaturations S of about 106 in the presence of small clusters, through 103 in the presence of {113} defects, to S in the range 100 down to 1 as loops are formed, evolve and finally evaporate. A detailed analysis of defect energetics has been carried out and it is shown that Ostwald ripening is the key concept for understanding and modelling defect interactions during TED of dopants in silicon.

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Nucleation and Growth of Voids in Silicon

MRS Proceedings ◽

10.1557/proc-490-77 ◽

1997 ◽

Vol 490 ◽

Cited By ~ 1

Author(s):

P. S. Plekhanov ◽

U. M. Gösele ◽

T. Y. Tan

Keyword(s):

Void Growth ◽

Homogeneous Nucleation ◽

Nucleation And Growth ◽

Vacancy Formation ◽

Limited Time ◽

Dislocation Loops ◽

Nucleation Barrier ◽

Different Temperatures ◽

Type Dislocation ◽

Growth Of Voids

ABSTRACTNucleation of voids and vacancy-type dislocation loops in Si under vacancy supersaturation conditions has been considered. Based upon nucleation barrier calculations, it has been found that voids can be nucleated, but not dislocation loops. The homogeneous nucleation rate of voids has been calculated for different temperatures by assuming different enthalpy values of Si vacancy formation. The process of void growth due to precipitation of vacancies has been numerically simulated. Comparing results of the nucleation and the growth modeling and taking into account the competition between the two processes, the limited time available, and the crystal cooling rate after growth, it has been shown that homogeneous nucleation of voids to experimentally observed densities and void growth to observed sizes is possible if enthalpy of Si vacancy formation is within the range of 2.9 to 3.6 eV with the nucleation temperature in the range of 980–1080 °C.

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Defects and Phase Change Induced by Giant Electronic Excitations With GeV Ions And 30MeV Cluster Beam

MRS Proceedings ◽

10.1557/proc-439-721 ◽

1996 ◽

Vol 439 ◽

Cited By ~ 1

Author(s):

P. Thevenard ◽

M. Beranger ◽

B. Canut ◽

S. M. M. Ramos ◽

N. Bonardi ◽

...

Keyword(s):

Rutherford Backscattering Spectrometry ◽

Electronic Energy ◽

Extended Defects ◽

Electronic Excitations ◽

Dislocation Loops ◽

Nuclear Collisions ◽

Transmission Electron ◽

F Center ◽

Different Temperatures ◽

Solid State Parameters

AbstractMgO and LiNbO 3 single crystals were bombarded with GeV swift heavy ions (Pb, Gd) and 30MeV C60 clusters to study the damage production induced by giant electronic processes at stopping power up to 100keV/nm. The defect creation was characterized by optical absorption, transmission electron microscopy (TEM) and Rutherford backscattering spectrometry in channeling geometry (RBS-C). In MgO point defects (F type centers) and extended defects (dislocation loops) were created by ionization processes in addition to those associated with nuclear collisions. The F-center concentration induced by electronic energy excitations was studied at different temperatures and as a function of the particle electronic energy losses. TEM revealed that dislocation loops were produced close to the particle trajectories and amorphization was never observed. On the opposite, in LiNbO3 continuous amorphous tracks were evidenced above a threshold near 5keV/nm. The dependance of this effects with various solid state parameters will be discussed.

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Behavior of Damage in Selectively Implanted SiGe/Si

MRS Proceedings ◽

10.1557/proc-319-159 ◽

1993 ◽

Vol 319 ◽

Cited By ~ 3

Author(s):

N. David Theodore ◽

Gordon Tam ◽

Jim Whitfield ◽

Jim Christiansen ◽

John Steele

Keyword(s):

Heterojunction Bipolar Transistors ◽

High Speed ◽

Critical Thickness ◽

Bipolar Transistors ◽

Electrical Performance ◽

Misfit Dislocations ◽

Extended Defects ◽

Dislocation Loops ◽

And Behavior ◽

Dislocation Sources

AbstractEpitaxial SiGe/Si layers are being extensively investigated for use in base regions of high-speed heterojunction bipolar-transistors (HBTs). Extended defects can be formed in SiGe/Si layers by ion-implantation. Defects, once formed in the layers, can negatively impact electrical performance and also future reliability of the HBTs. The present study investigates the interaction between selective-implant damage and strained SiGe/Si layers of sub-critical thickness. Implant-damage is observed to form dislocation-sources at the edges of implanted regions in SiGe/Si heterolayers. The dislocation sources produce glide dislocation loops. Segments of these loops glide down to SiGe/Si interfaces causing misfit dislocations to arise at interfaces in the heterolayers. Misfitdislocations are formed in directions parallel to and perpendicular to the <110> edge of the implanted region. Dislocations propagate out to a distance of ∼100-150 nm past the edge of the implant in the case of Si0.9Ge0.1/Si layers of sub-critical thickness. The origin and behavior of these defects is discussed.

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