Full energy range primary radiation damage model

Radiation-induced damage is a common occurrence in cancer patients who undergo radiotherapy. In this setting, radiation-induced damage can be refractory because the regeneration responses of injured tissues or organs are not well stimulated. Mesenchymal stem cells have become ideal candidates for managing radiation-induced damage. Moreover, accumulating evidence suggests that exosomes derived from mesenchymal stem cells have a similar effect on repairing tissue damage mainly because these exosomes carry various bioactive substances, such as miRNAs, proteins and lipids, which can affect immunomodulation, angiogenesis, and cell survival and proliferation. Although the mechanisms by which mesenchymal stem cell-derived exosomes repair radiation damage have not been fully elucidated, we intend to translate their biological features into a radiation damage model and aim to provide new insight into the management of radiation damage.

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Development of a silicon bulk radiation damage model for Sentaurus TCAD

Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ◽

10.1016/j.nima.2017.08.042 ◽

2017 ◽

Vol 874 ◽

pp. 94-102

Author(s):

Å. Folkestad ◽

K. Akiba ◽

M. van Beuzekom ◽

E. Buchanan ◽

P. Collins ◽

...

Keyword(s):

Radiation Damage ◽

Damage Model ◽

Silicon Bulk

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Simulation of doping and primary radiation damage to the SiC(111) surface under bombardment by Si N atomic and cluster ions (N = 1, 5, and 60) using classical molecular dynamics

Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques ◽

10.1134/s1027451011030050 ◽

2011 ◽

Vol 5 (2) ◽

pp. 249-255 ◽

Cited By ~ 2

Author(s):

A. V. Bakaev ◽

E. E. Zhurkin

Keyword(s):

Molecular Dynamics ◽

Radiation Damage ◽

Cluster Ions ◽

Primary Radiation ◽

Classical Molecular Dynamics

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Prediction of radiation degradation of Si detectors irradiated by relativistic ions of different masses

Journal of Physics Conference Series ◽

10.1088/1742-6596/2103/1/012068 ◽

2021 ◽

Vol 2103 (1) ◽

pp. 012068

Author(s):

D Mitina ◽

E Verbitskaya ◽

I Eremin ◽

N Fadeeva

Keyword(s):

Energy Range ◽

Total Energy ◽

Radiation Damage ◽

Silicon Material ◽

Radiation Degradation

Abstract The presented paper is focused around radiation damage of silicon material under the different ions irradiation. The ion total energy range is 0.7 GeV for 7Li to 208 GeV for 208Pb. The results of TRIM modeling for the set of six ions are presented. The extracted information about vacancy production allows making first assumptions of the Si degradation dependence on mass and energy of the incident ion.

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