Strain analysis using high energy X-ray white beam diffraction

A defocused Laue diffractometer setup operating with the white beam of a high energy X-ray tube has been used for a topographic visualization of structural defects in semiconductor wafers. The laboratory white beam X-ray topograph of a Czochralski Si wafer with oxygen precipitates grown in an annealing process is compared to a μPCD image. Further, the dislocation network in a VGF GaAs wafer is studied under thermal annealing up to 1140°C and the in-situ capability of the setup is demonstrated.

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Surface Structure of Sulfur Coated GaAs

MRS Proceedings ◽

10.1557/proc-163-1017 ◽

1989 ◽

Vol 163 ◽

Cited By ~ 1

Author(s):

Yoshihisa Fujisaki ◽

Shigeo Goto

Keyword(s):

Electron Beam ◽

Surface Structure ◽

Chemical Bond ◽

Photoelectron Spectroscopy ◽

Strong Dependence ◽

High Energy ◽

Chemical Bonds ◽

High Energy Electron ◽

X Ray ◽

Beam Diffraction

AbstractSurface structure of (NH4)2S treated GaAs. is investigated using PL (PhotoLuminescence), XPS (X-ray Photoelectron Spectroscopy) and RHEED (Reflection of High Energy Electron beam Diffraction). The data taken with these techniques show the strong dependence upon the crystal orientations coming from the stabilities of chemical bonds of Ga-S and As-S on GaAs crystals. The greater enhancement of PL intensity, the clearer RHEED patterns and the smaller amount of oxides on (111)A than (111)B implies the realization of a more stable structure composed mainly of the Ga-S chemical bond.

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Advanced Strain Analysis by High Energy Synchrotron X-Ray Diffraction

Materials Science Forum ◽

10.4028/www.scientific.net/msf.404-407.329 ◽

2002 ◽

Vol 404-407 ◽

pp. 329-334 ◽

Cited By ~ 2

Author(s):

Alexander M. Korsunsky ◽

Karen E. James

Keyword(s):

Strain Analysis ◽

High Energy ◽

X Ray Diffraction ◽

X Ray

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LauePt, a graphical-user-interface program for simulating and analyzing white-beam X-ray diffraction Laue patterns

Journal of Applied Crystallography ◽

10.1107/s0021889810015013 ◽

2010 ◽

Vol 43 (4) ◽

pp. 926-928 ◽

Cited By ~ 29

Author(s):

X. R. Huang

Keyword(s):

X Ray Diffraction ◽

X Ray ◽

X Ray Crystallography ◽

White Beam ◽

Diffraction Geometry ◽

Wide Range ◽

User Friendly ◽

Beam Diffraction ◽

Laue Method

LauePtis a robust and extremely easy-to-use Windows application for accurately simulating, indexing and analyzing white-beam X-ray diffraction Laue patterns of any crystals under arbitrary diffraction geometry. This program has a user-friendly graphic interface and can be conveniently used by nonspecialists with little X-ray diffraction or crystallography knowledge. Its wide range of applications include (1) determination of single-crystal orientation with the Laue method, (2) white-beam topography, (3) white-beam microdiffraction, (4) X-ray studies of twinning, domains and heterostructures, (5) verification or determination of crystal structures from white-beam diffraction, and (6) teaching of X-ray crystallography.

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White beam X-ray Diffraction Topography (WBXDT) Studies of Bridgman Grown CdZnTe Crystals

MRS Proceedings ◽

10.1557/opl.2015.510 ◽

2015 ◽

Vol 1792 ◽

Author(s):

Stephen Babalola ◽

Samuel Uba ◽

Anwar Hossain ◽

Giuseppe Camarda ◽

Ralph James ◽

...

Keyword(s):

Growth Parameters ◽

Charge Trapping ◽

Radiation Detectors ◽

Growth Conditions ◽

High Energy ◽

Infrared Transmission ◽

X Ray Diffraction ◽

Large Area ◽

X Ray ◽

White Beam

ABSTRACTCZT is a semiconductor material that promises to be a good candidate for uncooled gamma radiation detectors. However, to date, we are yet to overcome the technological difficulties in production of large size, defect-free CZT crystals. The most common problem is accumulation of Tellurium precipitates as microscopic inclusions. These inclusions influence the charge collection through charge trapping and electric field distortion. We employed high energy transmission X-ray diffraction techniques to study the quality of the CdZnTe crystals grown by Bridgman Technique. Crystallinity and defects within two different growth set-ups, i.e. with and without choked seeding, were compared by imaging the crystal orientation topography with white beam X-ray diffraction topography (WBXDT). The X-ray diffraction topography results show high correlation with large-area infrared transmission images of the crystals. Grain boundaries that are highly decorated with Te inclusions are observed. Characteristic Te inclusion arrangements as a result of growth conditions are discussed. We also measured the electronic properties of the detectors fabricated from ingots grown using two Bridgman processes, and observed a reduction in electrical resistivity of choked-seeding-grown CdZnTe crystals. Our results show that although choked seeding technique holds a promise in the realization of high quality mono-crystalline CdZnTe, current growth parameters must be improved to obtain defect-free crystals. These results are helpful to attain optimal seeding process for Bridgman-growth of large single crystals of CdZnTe.

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High energy white beam x-ray diffraction studies of residual strains in engineering components

10.1063/1.2991349 ◽

2008 ◽

Cited By ~ 1

Author(s):

S. Y. Zhang ◽

W. Vorster ◽

T. S. Jun ◽

X. Song ◽

M. Golshan ◽

...

Keyword(s):

High Energy ◽

X Ray Diffraction ◽

X Ray ◽

White Beam ◽

Residual Strains

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Matrix effects in white-beam X-ray fluorescence holography

Journal of Applied Crystallography ◽

10.1107/s1600576715003490 ◽

2015 ◽

Vol 48 (2) ◽

pp. 542-549 ◽

Cited By ~ 2

Author(s):

D. T. Dul ◽

P. Korecki

Keyword(s):

Local Structure ◽

Matrix Effects ◽

High Energy ◽

Sensitive Information ◽

Pure Element ◽

Model Calculations ◽

X Ray ◽

High Energies ◽

Beam Attenuation ◽

White Beam

Recently, it has been shown that atomic structure determination with X-ray fluorescence holography (XFH) can be hindered by matrix effects,i.e.beam attenuation and indirect excitation. The analysis was limited to the monochromatic regime. In this work, the description of matrix effects is extended to the polychromatic case. It is shown that matrix effects affect the element sensitivity of white-beam XFH by introducing distortions in the holographic signal which may lead to spurious maxima in the reconstructed image. For high energies of the X-ray beam it is found that the effect of beam attenuation is very weak and indirect excitation mainly contributes to the distortions. A correction for matrix effects is proposed in the high-energy range, which allows one to remove the distortions and retrieve pure element-sensitive information. Numerical model calculations are performed to visualize the reduction of element sensitivity and its implications on local structure imaging.

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Synchrotron White Beam Topography Studies of Residual Stress in SiC Single Crystal Wafers with Epitaxial Thin Films

MRS Proceedings ◽

10.1557/proc-399-425 ◽

1995 ◽

Vol 399 ◽

Author(s):

W. Huang ◽

Q. Wang ◽

M. Dudley ◽

F. P. Chiang ◽

J. Parsons ◽

...

Keyword(s):

Residual Stress ◽

High Energy ◽

Epitaxial Thin Films ◽

Multiple Diffraction ◽

X Ray ◽

Wafer Curvature ◽

White Beam ◽

Curvature Measurement ◽

Reflection Geometry ◽

Sic Wafer

ABSTRACTThe residual stress in a 6H-SiC wafer with a 3C-SiC epitaxial overlayer is determined by the technique of Synchrotron white beam x-ray topography (SWBXT). The short wavelength and high energy attributes of synchrotron radiation are exploited to very accurately determine the wafer curvature. Different approaches including absorption edge contour (AEC) mapping, multiple diffraction line (MDL) analysis and diffracted x-ray beam divergence (DXBD) analysis in both transmission and reflection geometry are demonstrated. The residual stress distribution is calculated from the wafer curvature measurement.

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High-purity Ge x-ray detectors: Sensitivity factors and usefulness

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100136350 ◽

1990 ◽

Vol 48 (2) ◽

pp. 548-548

Author(s):

E. B. Steel

Keyword(s):

High Purity ◽

High Energy ◽

Quantitative Chemical Analysis ◽

Detector Performance ◽

X Ray ◽

Detector Sensitivity ◽

Specimen Holder ◽

Many Instruments ◽

Charge Resolution ◽

Sensitivity Factors

High Purity Germanium (HPGe) x-ray detectors are now commercially available for the analytical electron microscope (AEM). The detectors have superior efficiency at high x-ray energies and superior resolution compared to traditional lithium-drifted silicon [Si(Li)] detectors. However, just as for the Si(Li), the use of the HPGe detectors requires the determination of sensitivity factors for the quantitative chemical analysis of specimens in the AEM. Detector performance, including incomplete charge, resolution, and durability has been compared to a first generation detector. Sensitivity factors for many elements with atomic numbers 10 through 92 have been determined at 100, 200, and 300 keV. This data is compared to Si(Li) detector sensitivity factors.The overall sensitivity and utility of high energy K-lines are reviewed and discussed. Many instruments have one or more high energy K-line backgrounds that will affect specific analytes. One detector-instrument-specimen holder combination had a consistent Pb K-line background while another had a W K-line background.

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Designing high-resolution slow scan CCD-based TEM camera systems

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010012936x ◽

1992 ◽

Vol 50 (2) ◽

pp. 946-947

Author(s):

James F. Mancuso ◽

William B. Maxwell ◽

Russell E. Camp ◽

Mark H. Ellisman

Keyword(s):

Fiber Optics ◽

Ccd Camera ◽

High Energy ◽

Phosphor Layer ◽

X Ray ◽

Light Production ◽

Camera Systems ◽

X Ray Imaging ◽

Electron Image ◽

Scintillating Fiber

The imaging requirements for 1000 line CCD camera systems include resolution, sensitivity, and field of view. In electronic camera systems these characteristics are determined primarily by the performance of the electro-optic interface. This component converts the electron image into a light image which is ultimately received by a camera sensor.Light production in the interface occurs when high energy electrons strike a phosphor or scintillator. Resolution is limited by electron scattering and absorption. For a constant resolution, more energy deposition occurs in denser phosphors (Figure 1). In this respect, high density x-ray phosphors such as Gd2O2S are better than ZnS based cathode ray tube phosphors. Scintillating fiber optics can be used instead of a discrete phosphor layer. The resolution of scintillating fiber optics that are used in x-ray imaging exceed 20 1p/mm and can be made very large. An example of a digital TEM image using a scintillating fiber optic plate is shown in Figure 2.

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