scholarly journals MicroED with a direct electron detector

2021 ◽  
Vol 77 (a1) ◽  
pp. a258-a258
Author(s):  
Johan Hattne ◽  
Michael Martynowycz ◽  
Max Clabbers ◽  
Tamir Gonen
Keyword(s):  
Author(s):  
S. Kimoto ◽  
H. Hashimoto ◽  
S. Takashima ◽  
R. M. Stern ◽  
T. Ichinokawa

The most well known application of the scanning microscope to the crystals is known as Coates pattern. The contrast of this image depends on the variation of the incident angle of the beam to the crystal surface. The defect in the crystal surface causes to make contrast in normal scanning image with constant incident angle. The intensity variation of the backscattered electrons in the scanning microscopy was calculated for the defect in the crystals by Clarke and Howie. Clarke also observed the defect using a scanning microscope.This paper reports the observation of lattice defects appears in thin crystals through backscattered, secondary and transmitted electron image. As a backscattered electron detector, a p-n junction detector of 0.9 π solid angle has been prepared for JSM-50A. The gain of the detector itself is 1.2 x 104 at 50 kV and the gain of additional AC amplifier using band width 100 Hz ∼ 10 kHz is 106.


Author(s):  
T. Miyokawa ◽  
H. Kazumori ◽  
S. Nakagawa ◽  
C. Nielsen

We have developed a strongly excited objective lens with a built-in secondary electron detector to provide ultra-high resolution images with high quality at low to medium accelerating voltages. The JSM-6320F is a scanning electron microscope (FE-SEM) equipped with this lens and an incident beam divergence angle control lens (ACL).The objective lens is so strongly excited as to have peak axial Magnetic flux density near the specimen surface (Fig. 1). Since the speciien is located below the objective lens, a large speciien can be accomodated. The working distance (WD) with respect to the accelerating voltage is limited due to the magnetic saturation of the lens (Fig.2). The aberrations of this lens are much smaller than those of a conventional one. The spherical aberration coefficient (Cs) is approximately 1/20 and the chromatic aberration coefficient (Cc) is 1/10. for accelerating voltages below 5kV. At the medium range of accelerating voltages (5∼15kV). Cs is 1/10 and Cc is 1/7. Typical values are Cs-1.lmm. Cc=l. 5mm at WD=2mm. and Cs=3.lmm. Cc=2.9 mm at WD=5mm. This makes the lens ideal for taking ultra-high resolution images at low to medium accelerating voltages.


2018 ◽  
Author(s):  
Steve Wang ◽  
Jim McGinn ◽  
Peter Tvarozek ◽  
Amir Weiss

Abstract Secondary electron detector (SED) plays a vital role in a focused ion beam (FIB) system. A successful circuit edit requires a good effective detector. Novel approach is presented in this paper to improve the performance of such a detector, making circuit altering for the most advanced integrated circuit (IC) possible.


2008 ◽  
Author(s):  
Huanxin Zhang ◽  
Guangwu Zhu ◽  
Shijin Wang ◽  
Tao Jing ◽  
Yue Wang

Author(s):  
James F. Pearson ◽  
George W. Fraser ◽  
Chris H. Whitford ◽  
Michele R.F. Siggel-King ◽  
Francis M. Quinn ◽  
...  

2001 ◽  
Vol 7 (3) ◽  
pp. 287-291
Author(s):  
Toshie Yaguchi ◽  
Hiroaki Matsumoto ◽  
Takeo Kamino ◽  
Tohru Ishitani ◽  
Ryoichi Urao

AbstractIn this study, we discuss a method for cross-sectional thin specimen preparation from a specific site using a combination of a focused ion beam (FIB) system and an intermediate voltage transmission electron microscope (TEM). A FIB-TEM compatible specimen holder was newly developed for the method. The thinning of the specimen using the FIB system and the observation of inside structure of the ion milled area in a TEM to localize a specific site were alternately carried out. The TEM fitted with both scanning transmitted electron detector and secondary electron detector enabled us to localize the specific site in a halfway milled specimen with the positional accuracy of better than 0.1 µm. The method was applied to the characterization of a precipitate in a steel. A submicron large precipitate was thinned exactly at its center for the characterization by a high-resolution electron microscopy and an elemental mapping.


1997 ◽  
Vol 3 (S2) ◽  
pp. 385-386 ◽  
Author(s):  
Brendan J. Griffin

The environmental SEM is an extremely adaptive instrument, allowing a range of materials to be examined under a wide variety of conditions. The limitations of the instrument lie mainly with the restrictions imposed by the need to maintain a moderate vacuum around the electron gun. The primary effect of this has been, in a practical sense, the limited low magnification available. Recently this has been overcome by modifications to the final pressure limiting aperture and secondary electron detector (Fig.l). The modifications are simple and users should be brave in this regard.A variety of electron detectors now exist including various secondary, backscattered and cathodoluminescence systems (Figs 2-5). These provide an excellent range of options; the ESEM must be regarded as a conventional SEM in that a range of imaging options should be installed. In some cases, e.g. cathodoluminescence, the lack of coating provides an advantage unique to the low vacuum SEMs.


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