X-ray diffraction in perfect t × l crystals. Rocking curves

1999 ◽  
Vol 55 (5) ◽  
pp. 840-854 ◽  
Author(s):  
Gunnar Thorkildsen ◽  
Helge B. Larsen
Keyword(s):  
Significant Influence ◽  
Full Width ◽  
Half Maximum ◽  
Fundamental Theory ◽  
Anomalous Absorption ◽  
X Ray Diffraction ◽  
X Ray ◽  
Infinite Crystal ◽  
Extinction Length ◽  
Kinematical Limit

A general formalism, based on the Takagi–Taupin equations, for calculating rocking curves in perfect t\times l crystals is presented. It includes nonsymmetrical scattering, refraction, and ordinary and anomalous absorption. t and l may be varied independently. In the limit of a semi-infinite crystal, the standard results from the fundamental theory are retrieved. For crystal dimensions less than the extinction length, the theory converges to the kinematical limit. Simulations for germanium and silicon show significant influence of crystal finiteness. When dynamical effects are prominent, the curves exhibit various degrees of asymmetry and the full width at half-maximum is generally larger than the corresponding Darwin width. This is attributed to combined Laue and Bragg contributions which are shifted with respect to each other owing to refraction.

Effects of Sputtering Pressure on (ZnO)x(InN)1-x Crystal Film Growth at 450°C

2018 ◽  
Vol 941 ◽  
pp. 2093-2098
Author(s):  
Naho Itagaki ◽  
Kazuto Takeuchi ◽  
Nanoka Miyahara ◽  
Kouki Imoto ◽  
Hyun Woong Seo ◽  
...  
Keyword(s):  
Film Growth ◽  
Rf Magnetron Sputtering ◽  
Full Width ◽  
Half Maximum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Crystal Film ◽  
Crystal Films ◽  
Sputtering Pressure

We studied effects of sputtering pressure on growth of (ZnO)x(InN)1-xcrystal films deposited at 450°C by rf magnetron sputtering. Epitaxial growth of (ZnO)x(InN)1-xfilms was realized on single-crystalline ZnO template. X-ray diffraction measurements show that full width at half maximum of the rocking curves from the (101) plane of the films reaches minimum value of 0.11º at 0.5 Pa. The sputtering gas pressure is a key tuning knob for controlling the crystal quality of ZION films.

La cristallinité de l'illite revisitée: un bilan des connaissances acquises ces trente dernières années

Clay Minerals ◽  
2001 ◽  
Vol 36 (2) ◽  
pp. 143-157 ◽  
Author(s):  
B. Kübler ◽  
D. Goy-Eggenberger
Keyword(s):  
Clay Minerals ◽  
Full Width ◽  
Half Maximum ◽  
X Ray Diffraction ◽  
Illite Crystallinity ◽  
X Ray ◽  
Diffraction Patterns ◽  
Gaseous Hydrocarbons ◽  
Definition Of ◽  
Technological Improvements

AbstractThe main reason for the initial determinations of illite crystallinity (IC) was to support the exploration for liquid and gaseous hydrocarbons. The application in 1960 of the Weaver Sharpness Ratio to core materials of a borehole from eastern France indicated that it was not a reliable tool for identifying well-crystallized illite. This ratio was later replaced by the Full Width at Half-Maximum (FWHM), the value of which decreases regularly and consistently towards greenschist facies. The use of FWHM allowed a precise definition of the anchimetamorphic zone between the upper diagenesis and the epimetamorphism. Afterwards, analysis of weak-tointermediate diagenetic sequences showed that illite crystallinity decreases together with the amount of swelling interlayers in mixed-layer clay minerals. Technological improvements, such as computing and modelling of X-ray diffraction patterns, increased the analytical precision relative to measurements of the plain FWHM. Consequently, illite crystallinity went back to its initial use, namely detection of the transitions between diagenesis, anchi- and epi-metamorphism in smectitefree lithologies, where it can be used as a stratigraphic and mineralogic marker of alteration stages.

Effect of Annealing on Electrical Degradation Characteristics of ZnO Varistors

2008 ◽  
Vol 388 ◽  
pp. 7-10 ◽  
Author(s):  
Masayuki Takada ◽  
Shinzo Yoshikado
Keyword(s):  
Grain Boundaries ◽  
Diffraction Peak ◽  
Full Width ◽  
Half Maximum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Annealing Conditions ◽  
Electrical Degradation ◽  
Zno Varistors ◽  
Triple Points

The effects of the thermally annealing of Bi-Mn-Co-Sb2O3-added ZnO varistors on their electrical degradation were investigated. For the samples with 0.01mol% Sb2O3added and without Sb2O3, no marked difference in the non linearity index of the voltage-current (V-I) characteristics was observed upon electrical degradation for the annealed and nonannealed samples. Upon increasing the amount of Sb2O3 added, the values of  increased after electrical degradation for the annealed samples. Moreover, the value of  after electrical degradation was proportional to the full width at half maximum (FWHM) of the X-ray diffraction peak for Zn2.33Sb0.67O4-type spinel particles under various annealing conditions. The added Sb2O3 did not dissolve in the ZnO grains but became segregated at grain boundaries. Therefore, it is speculated that the increase in the FWHM for the spinel particles is due to the increase in the numbers of fine spinel particles at grain boundaries and triple points.

OS1205 Relationship between Full Width at Half Maximum of White X-ray Diffraction Profile and Plastic Strain

2009 ◽  
Vol 2009 (0) ◽  
pp. 654-655
Author(s):  
Takayoshi SUZUKI ◽  
Jun-ichi SHIBANO ◽  
Koji KIRIYAMA ◽  
Takayuki ARAI ◽  
Setsuo MIURA ◽  
...  
Keyword(s):  
Plastic Strain ◽  
Full Width ◽  
Half Maximum ◽  
X Ray Diffraction ◽  
Diffraction Profile ◽  
X Ray

High Resolution X-Ray Diffraction Analysis of Piezoelectric LiNbO3 Films.

1995 ◽  
Vol 401 ◽  
Author(s):  
Yoshihiko Shibata ◽  
Naohiro Kuze ◽  
Masahiro Matsui ◽  
Masaki Kanal ◽  
Tomoji Kawai
Keyword(s):  
Laser Ablation ◽  
High Resolution ◽  
The Other ◽  
Full Width ◽  
Half Maximum ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Excimer Laser Ablation ◽  
Sapphire Substrates

AbstractThin LINbO3 films are deposited on (001) sapphire and (001) LiTaO3 substrates by using pulsed excimer-laser ablation. These films are evaluated by high-resolution X-ray diffraction (HRXRD) analysis. Strained LiNbO3 films in which the a-axis is longer and the c-axis is shorter than those of LiNbO3 single crystals are deposited on the sapphire substrates. On the other hand, extremely high-quality LiNbO3 films in which the a-axis of the films is the same as that of substrates are grown on the LiTaO substrates. X-ray rocking curves for the (006) reflection showed very narrow full width at half maximum (FWHM) of 208 arcsec for the films on the sapphire substrates, and 9 arcsec for the films on LiTaO3 substrates.

Kyropoulos Growth and Characterization of Monoclinic α-Bi2B8O15 Single Crystal with Noncentrosymmetric Structure

CrystEngComm ◽  
2021 ◽  
Author(s):  
Mengdi Fan ◽  
guangda wu ◽  
Xinle Wang ◽  
Fapeng Yu ◽  
Chun Wang ◽  
...  
Keyword(s):  
High Resolution ◽  
Single Crystal ◽  
Diffraction Analysis ◽  
Full Width ◽  
Half Maximum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Borate Crystal ◽  
Kyropoulos Method

Monoclinic bismuth-based borate crystal α-Bi2B8O15 was grown by the Kyropoulos method. High resolution X-ray diffraction analysis showed that the full width at half-maximum of the Y plate was about 0.04°...

Domain structure of epitaxial PbTiO3 films grown on vicinal (001) SrTiO3

1997 ◽  
Vol 12 (5) ◽  
pp. 1297-1305 ◽  
Author(s):  
C. D. Theis ◽  
D. G. Schlom
Keyword(s):  
Diffraction Analysis ◽  
Pulsed Laser Deposition ◽  
Domain Structure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Full Width ◽  
Half Maximum ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray

Epitaxial PbTiO3 films have been grown on vicinal (001) SrTiO3 substrates by pulsed laser deposition. Vicinal SrTiO3 substrates with misorientations up to 9° from (001) were used, and the influence of the direction of misorientation on the resulting domain structure was studied. 4-circle x-ray diffraction analysis indicates that thin (40 nm) PbTiO3 films are completely c-axis oriented [rocking curve full-width-at-half-maximum (FWHM) of 0.25° for the 002 reflection] and that thicker films (∼ 200 nm) contain mixed a-axis and c-axis PbTiO3 domains due to twinning along {011} planes. The [100] axis of the a-axis domains is misoriented by 2.1° to 3.3° toward 〈100〉 substrate directions with respect to the substrate normal. In contrast to growth on well-oriented (001) SrTiO3 surfaces where the four equivalent tilts of the [100] axis of the a-axis domains are equally likely, on vicinal SrTiO3 the a-axis domains are preferentially oriented in an uphill direction with respect to the crystallographic miscut.

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