Local structure around In atoms in coherently grownm-plane InGaN film
The local structure around In atoms in anm-plane In0.06Ga0.94N film coherently grown on a freestandingm-plane GaN substrate was investigated by polarization-dependent X-ray absorption fine-structure. A step-by-step fitting procedure was proposed for them-plane wurtzite structure. The interatomic distance for the first nearest neighbour In—N atomic pairs was almost isotropic. For the second nearest In—Ga pairs, the interatomic distances along them- anda-axes were longer and shorter, respectively, than that in strain-free virtual crystals as expected for them-plane compressive strain. In contrast, the In—Ga interatomic distance in thec-direction was elongated in spite of the compressive strain, which was explained in terms of the anisotropic atomic structure on them-plane. The local strain in them-plane film was more relaxed than that in coherently grownc-plane single quantum wells. A few In atoms were atomically localized in all directions, and thus localized excitonic emission is expected as in the case ofc-plane InGaN.