Interface defects detection and quantification on a Si/SiO2 structure

2018 ◽  
Vol 35 (1) ◽  
pp. 12-17
Author(s):  
Rawad Elias ◽  
Pierre Ziade ◽  
Roland Habchi
Keyword(s):  
Electrical Characterization ◽  
Power Devices ◽  
Content Type ◽  
Mos Devices ◽  
Interface Defects ◽  
Current Voltage ◽  
Silicon Based ◽  
The Hill ◽  
A Current

Purpose The purpose of this paper is to investigate and classify the defects on silicon-based power devices under extreme conditions. Design/methodology/approach Electrical characterization was performed on MOS devices to study their interface defects. The devices were subjected to a voltage or a current constraint to induce defects, and then measurements were done to detect the effects of those defects. Measurements include current voltage, capacitance and conductance characterization. The Hill–Coleman method was used to calculate the interface states density in each case. Findings It was found that most of the defects have energies within the upper band gap of the semiconductor. Originality value The method used in this paper allows the determination of any interface defects on a Si/SiO2 structure.

Electrical Characterization of Copper Penetration Effects in the Gate Oxide of MOS Devices

2001 ◽  
Vol 714 ◽  
Author(s):  
François Mondon ◽  
Jacques Cluzel ◽  
Denis Blachier ◽  
Yves Morand ◽  
Laurent Martel ◽  
...  
Keyword(s):  
Leakage Current ◽  
Electrical Characterization ◽  
Current Increase ◽  
Mos Capacitors ◽  
Mos Devices ◽  
Thermal Oxide ◽  
Current Voltage ◽  
Bias Temperature Stress ◽  
Generation Lifetime

ABSTRACTCopper penetration in thermal oxide was investigated using MOS capacitors by annealing at 450 °C and bias-temperature stress at 250 °C. Copper induces minority carrier generation lifetime decay and oxide leakage current increase. Degradation is enhanced by capacitor biasing, which confirms the role of Cu+ ions. The current-voltage characteristics are consistent with Poole-Frenkel model, showing that electron transport proceeds through traps created in the oxide bulk by copper. When a negative bias is applied, copper traps are removed from oxide near SiO2-Si interface and the leakage current is cancelled but the generation lifetime remains nil, copper contamination of silicon surface being not removed.None of these effects are observed when the copper gate is separated from oxide by a 10 nm TiN layer, proving that this material is an efficient barrier against copper diffusion at 450°C.

Photocapacitance of Hydrogenated Amorphous Silicon Phototransistors

2001 ◽  
Vol 664 ◽  
Author(s):  
D. Caputo ◽  
G. de Cesare ◽  
F. Lemmi ◽  
A. Nascetti ◽  
F. Palma ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Release Kinetics ◽  
Electrical Characterization ◽  
Imaging Systems ◽  
Probe Signal ◽  
Large Area ◽  
Low Frequencies ◽  
Current Voltage ◽  
Silicon Based ◽  
Hydrogenated Amorphous

ABSTRACTAmorphous silicon-based phototransistors are studied as an alternative solution to replace pixel-level amplifiers simplifying large-area imaging systems. We report electrical characterization by means of current-voltage and capacitance measurements. The measured capacitance increases with decreasing frequency of the probe signal and values largely exceeding the geometrical one at low frequencies have been achieved both in the dark and under illumination. In particular, values in excess of 200 μF/cm2 are measured under 220 μW/cm2 illumination at 600 nm at 100 mHz. The capacitance dependence on frequency is interpreted in terms of trapping and release kinetics processes in the base and of the gain of the device.

Interface Defects and Negative Bias Temperature Instabilities in 4H-SiC PMOSFETs – A Combined DCIV/SDR Study

2013 ◽  
Vol 740-742 ◽  
pp. 529-532 ◽  
Author(s):  
Thomas Aichinger ◽  
Patrick M. Lenahan ◽  
Dethard Peters
Keyword(s):  
Electrical Characterization ◽  
Negative Bias ◽  
Bias Temperature Instability ◽  
Interface Defects ◽  
Current Voltage ◽  
Electrically Detected Magnetic Resonance ◽  
Bias Temperature Stress ◽  
On Chip ◽  
Recombination Current

We study the structure of SiC/SiO2 interface defects and the effects of negative bias temperature stress (NBTS) in lateral 4H silicon carbide (SiC) PMOSFETs. Our devices have 90 nm thick SiO2 gate oxides thermally grown in N2O ambient at 1280°C on n-type SiC. We investigate virgin (unstressed) and stressed devices using two different techniques: (i) for electrical characterization, we use the direct-current current-voltage (DCIV) technique [1] which measures a recombination current via interface defects and charge pumping (CP) which measures the number of interface defects within a certain range of the SiC band gap; (ii) to study the structure of the defects, we use electrically detected magnetic resonance (EDMR) via spin dependent recombination (SDR) [2]. The elevated temperature during NBTS is provided by in-situ heated test structures. This is the first EDMR study of p-doped SiC MOSFETs and the first negative bias temperature instability (NBTI) study of SiC MOSFETs using in-situ (on-chip) heating during stress.

Nanoprobing Applications with Capacitance-Voltage and Pulsed Current-Voltage Measurements for Device Failure Analysis

2015 ◽  
Author(s):  
LiLung Lai ◽  
Nan Li ◽  
Qi Zhang ◽  
Tim Bao ◽  
Robert Newton
Keyword(s):  
Failure Analysis ◽  
High Speed ◽  
Pulsed Current ◽  
Electrical Measurements ◽  
Device Failure ◽  
Mos Devices ◽  
Atomic Force ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Rising Time

Abstract Owing to the advancing progress of electrical measurements using SEM (Scanning Electron Microscope) or AFM (Atomic Force Microscope) based nanoprober systems on nanoscale devices in the modern semiconductor laboratory, we already have the capability to apply DC sweep for quasi-static I-V (Current-Voltage), high speed pulsing waveform for the dynamic I-V, and AC imposed for C-V (Capacitance-Voltage) analysis to the MOS devices. The available frequency is up to 100MHz at the current techniques. The specification of pulsed falling/rising time is around 10-1ns and the measurable capacitance can be available down to 50aF, for the nano-dimension down to 14nm. The mechanisms of dynamic applications are somewhat deeper than quasi-static current-voltage analysis. Regarding the operation, it is complicated for pulsing function but much easy for C-V. The effective FA (Failure Analysis) applications include the detection of resistive gate and analysis for abnormal channel doping issue.

Contactless and Spatially‐Resolved Determination of Current‐Voltage Curves in Perovskite Solar Cells via Photoluminescence

Solar RRL ◽  
2021 ◽  
Author(s):  
Anh Dinh Bui ◽  
Md Arafat Mahmud ◽  
Naeimeh Mozaffari ◽  
Rabin Basnet ◽  
The Duong ◽  
...  
Keyword(s):  
Solar Cells ◽  
Perovskite Solar Cells ◽  
Spatially Resolved ◽  
Current Voltage

scholarly journals Correlation between Defects and Electrical Performances of Ion-Irradiated 4H-SiC p–n Junctions

Materials ◽  
2021 ◽  
Vol 14 (8) ◽  
pp. 1966
Author(s):  
Domenico Pellegrino ◽  
Lucia Calcagno ◽  
Massimo Zimbone ◽  
Salvatore Di Franco ◽  
Antonella Sciuto
Keyword(s):  
Deep Level ◽  
Electrical Characterization ◽  
High Fluence ◽  
Defect States ◽  
Exponential Parameter ◽  
Current Voltage ◽  
Different Temperatures ◽  
In Series ◽  
Transient Spectroscopy ◽  
Fluence Range

In this study, 4H-SiC p–n junctions were irradiated with 700 keV He+ ions in the fluence range 1.0 × 1012 to 1.0 × 1015 ions/cm2. The effects of irradiation were investigated by current–voltage (I–V) and capacitance–voltage (C–V) measurements, while deep-level transient spectroscopy (DLTS) was used to study the traps introduced by irradiation defects. Modifications of the device’s electrical performances were observed after irradiation, and two fluence regimes were identified. In the low fluence range (≤1013 ions/cm2), I–V characteristics evidenced an increase in series resistance, which can be associated with the decrease in the dopant concentration, as also denoted by C–V measurements. In addition, the pre-exponential parameter of junction generation current increased with fluence due to the increase in point defect concentration. The main produced defect states were the Z1/2, RD1/2, and EH6/7 centers, whose concentrations increased with fluence. At high fluence (>1013 ions/cm2), I–V curves showed a strong decrease in the generation current, while DLTS evidenced a rearrangement of defects. The detailed electrical characterization of the p–n junction performed at different temperatures highlights the existence of conduction paths with peculiar electrical properties introduced by high fluence irradiation. The results suggest the formation of localized highly resistive regions (realized by agglomeration of point defects) in parallel with the main junction.

scholarly journals Photoconduction of Polar and Nonpolar Cuts of Undoped Sr0.61Ba0.39Nb2O6 Single Crystals

Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 780
Author(s):  
Elke Beyreuther ◽  
Julius Ratzenberger ◽  
Matthias Roeper ◽  
Benjamin Kirbus ◽  
Michael Rüsing ◽  
...  
Keyword(s):  
Electrical Measurement ◽  
Excitation Wavelength ◽  
Trap States ◽  
Strontium Barium Niobate ◽  
Strontium Barium ◽  
Current Voltage ◽  
History Of ◽  
A Current ◽  
Complex Manner

In the last two decades, variably doped strontium barium niobate (SBN) has attracted a lot of scientific interest mainly due to its specific non-linear optical response. Comparably, the parental compound, i.e., undoped SBN, appears to be less studied so far. Here, two different cuts of single-crystalline nominally pure strontium barium niobate in the composition Sr0.61Ba0.39Nb2O6 (SBN61) are comprehensively studied and analyzed with regard to their photoconductive responses. We present conductance measurements under systematically varied illumination conditions along either the polar z-axis or perpendicular to it (x-cut). Apart from a pronounced photoconductance (PC) already under daylight and a large effect upon super-bandgap illumination in general, we observe (i) distinct spectral features when sweeping the excitation wavelength over the sub-bandgap region as then discussed in the context of deep and shallow trap states, (ii) extremely slow long-term relaxation for both light-on and light-off transients in the range of hours and days, (iii) a critical dependence of the photoresponse on the pre-illumination history of the sample, and (iv) a current–voltage hysteresis depending on both the illumination and the electrical-measurement conditions in a complex manner.

Locating complex eigenvalues for analytical eddy-current models used to detect flaws

2019 ◽  
Vol 38 (6) ◽  
pp. 1800-1809
Author(s):  
Grzegorz Tytko ◽  
Łukasz Dawidowski
Keyword(s):  
Eddy Current ◽  
Design Methodology ◽  
Complex Function ◽  
Precise Determination ◽  
Argument Principle ◽  
Content Type ◽  
Conductive Material ◽  
Complex Roots ◽  
Complex Eigenvalues

Purpose Discrete eigenvalues occur in eddy current problems in which the solution domain was truncated on its edge. In case of conductive material with a hole, the eigenvalues are complex numbers. Their computation consists of finding complex roots of a complex function that satisfies the electromagnetic interface conditions. The purpose of this paper is to present a method of computing complex eigenvalues that are roots of such a function. Design/methodology/approach The proposed approach involves precise determination of regions in which the roots are found and applying sets of initial points, as well as the Cauchy argument principle to calculate them. Findings The elaborated algorithm was implemented in Matlab and the obtained results were verified using Newton’s method and the fsolve procedure. Both in the case of magnetic and nonmagnetic materials, such a solution was the only one that did not skip any of the eigenvalues, obtaining the results in the shortest time. Originality/value The paper presents a new effective method of locating complex eigenvalues for analytical solutions of eddy current problems containing a conductive material with a hole.

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