Electro-Thermal SPICE Model for High-Voltage SiC VJFETs
2009 ◽
Vol 615-617
◽
pp. 731-734
Keyword(s):
After the successful introduction of silicon carbide Schottky-Barrier diodes in 2001, next commercial devices will be switching components. The development focus is targeted to MOSFETs and VJFETs. Regarding VJFETs, a promising device was presented several years ago and tested successfully in several applications. Since the unconventional device structure does not allow the use of classical JFET models, a new electro-thermal model was developed, taking into account the features of the design as well as the targeted enlarged range of operating temperatures.
1992 ◽
Vol 13
(10)
◽
pp. 501-503
◽
2005 ◽
Vol 15
(04)
◽
pp. 821-866
◽
2013 ◽
Vol 290
◽
pp. 115-119
2014 ◽
Vol 31
(6)
◽
pp. 068502
◽
Keyword(s):
2002 ◽
Vol 122
(5)
◽
pp. 637-643
Keyword(s):
Keyword(s):