Steady-state thermal uniformity and gas flow patterns in a rapid thermal processing chamber

1991 ◽  
Vol 4 (1) ◽  
pp. 14-20 ◽  
Author(s):  
S.A. Campbell ◽  
K.-H. Ahn ◽  
K.L. Knutson ◽  
B.Y.H. Liu ◽  
J.D. Leighton
Keyword(s):  
Steady State ◽  
Thermal Processing ◽  
Gas Flow ◽  
Rapid Thermal Processing ◽  
Flow Patterns

Gas flow patterns and thermal uniformity in rapid thermal processing equipment

2002 ◽  
Author(s):  
S.A. Campbell ◽  
K.L. Knutson ◽  
K.H. Ahn ◽  
J.D. Leighton ◽  
B. Liu
Keyword(s):  
Thermal Processing ◽  
Gas Flow ◽  
Rapid Thermal Processing ◽  
Flow Patterns ◽  
Processing Equipment

Validation of a Rapid Thermal Processing model in steady-state

2008 ◽  
Vol 85 (11) ◽  
pp. 2282-2289 ◽  
Author(s):  
P.O. Logerais ◽  
D. Chapron ◽  
J. Garnier ◽  
A. Bouteville
Keyword(s):  
Steady State ◽  
Thermal Processing ◽  
Rapid Thermal Processing

Thermal Effects of Gasses in Rapid Thermal Processing

1991 ◽  
Vol 224 ◽  
Author(s):  
K. L. Knutson ◽  
S. A. Campbell ◽  
J. D. Leighton
Keyword(s):  
Steady State ◽  
Numerical Model ◽  
Thermal Processing ◽  
Thermal Effects ◽  
Rapid Thermal Processing ◽  
Radiant Intensity ◽  
Steady State Operation ◽  
Temperature Ramps ◽  
Short Time

AbstractA numerical model has been created for a Rapid Thermal Processing (RTP) system. Experiments have been done to show the validity of the model. The simulations done examine thermal uniformity and stresses incurred by RTP during steady state operation and during short time temperature ramps. It is shown that increasing the radiant intensity at the edge of the wafer reduces stress, compared to a uniform radiant field, in steadystate operation but increases stress during short time temperature ramps.

Gas Flow Engineering in Rapid Thermal Processing

1994 ◽  
Vol 342 ◽  
Author(s):  
Z. Nényei ◽  
H. Sommer ◽  
J. Gelpey ◽  
A. Bauer
Keyword(s):  
Low Temperature ◽  
Thermal Processing ◽  
Gas Dynamics ◽  
Silicon Surface ◽  
Gas Flow ◽  
Rapid Thermal Processing ◽  
Inert Gas ◽  
Guard Ring ◽  
Interface Damage ◽  
Bottom Heater

ABSTRACTGas flow engineering involves gas dynamics optimization for effective ambient change before heating and for homogeneous convective cooling of the wafers during the heating steps. Multiple gas buffle system, dynamical gas handling, low pressure operation, low temperature edge guard ring and independent top and bottom heater bank control are the proper tools for this optimization. Silicon surface or interface damage during inert gas anneal can be avoided by addition of a small amount of oxygen.

Simulation of Rapid Thermal Processing Equipment and Processes

1993 ◽  
Vol 303 ◽  
Author(s):  
Kun-Ho Lie ◽  
Tushar P. Merchant ◽  
Klavs F. Jensen
Keyword(s):  
Heat Transfer ◽  
Thermal Processing ◽  
Gas Flow ◽  
Transient Flow ◽  
Radiation Heat Transfer ◽  
Rapid Thermal Processing ◽  
Operating Conditions ◽  
Multiple Reflections ◽  
Design And Optimization ◽  
Process Gas

ABSTRACTWe present finite element simulations of fluid flow, heat transfer, and chemical reactions in axisymmetric rapid thermal processing (RTP) configurations. A new approach to simulating radiation heat transfer between lamps, substrates, and system walls is described. The method accounts for multiple reflections and readily allows the inclusion of temperature, radiation wavelength, and materials specific emissivity parameters. The influence of system geometry, lamp power profile, substrate and wall emissivity parameters, and process gas flow upon RTP performance characteristics is illustrated through examples. Transient flow and heat transfer simulations are used to identify operating conditions where flow recirculations are avoided. The further use of physically based models in the design and optimization of RTP systems is discussed.

scholarly journals Imprinting the Polytype Structure of Silicon Carbide by Rapid Thermal Processing

Crystals ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 523 ◽  
Author(s):  
Jörg Pezoldt ◽  
Volker Cimalla
Keyword(s):  
Silicon Carbide ◽  
Steady State ◽  
Epitaxial Growth ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Structural Evolution ◽  
Chemical Vapor ◽  
Time Profile ◽  
Crystallographic Structure ◽  
Ion Implanted

Silicon carbide is a material with a multistable crystallographic structure, i.e., a polytypic material. Different polytypes exhibit different band gaps and electronic properties with nearly identical basal plane lattice constants, making them interesting for heterostructures without concentration gradients. The controlled formation of this heterostructure is still a challenge. The ability to adjust a defined temperature–time profile using rapid thermal processing was used to imprint the polytype transitions by controlling the nucleation and structural evolution during the temperature ramp-up and the steady state. The influence of the linear heating-up rate velocity during ramp-up and steady-state temperature on the crystal structure of amorphized ion-implanted silicon carbide layers was studied and used to form heteropolytype structures. Integrating the structural selection properties of the non-isothermal annealing stage of the ion-implanted layers into an epitaxial growth process allows the imprinting of polytype patterns in epitaxial layers due to the structural replication of the polytype pattern during epitaxial growth. The developed methodology paves the way for structural selection and vertical and lateral polytype patterning. In rapid thermal chemical vapor deposition, the adjustment of the process parameters or the buffer layer allowed the nucleation and growth of wurtzite silicon carbide.

Improvement of Temperature Uniformity in Rapid Thermal Processing Systems Using Multivariable Control

1991 ◽  
Vol 224 ◽  
Author(s):  
S. A. Norman ◽  
C. D. Schaper ◽  
S. P. Boyd
Keyword(s):  
Steady State ◽  
Temperature Distribution ◽  
Thermal Processing ◽  
Numerical Technique ◽  
Rapid Thermal Processing ◽  
Temperature Uniformity ◽  
Wafer Temperature ◽  
Scalar Control ◽  
Steady State Temperature ◽  
Knob Control

AbstractDuring rapid thermal processing (RTP) of a semiconductor wafer, maintenance of nearuniform wafer temperature distribution is necessary. This paper addresses the problem of insuring temperature uniformity in a cylindrical RTP system with multiple concentric circular lamps.A numerical technique is presented for optimizing steady-state temperature distribution by independently varying the power radiated by each lamp. It is shown for a simulated system, over a wide range of temperature setpoints, that the temperature uniformity achievable with multivariable (“multiple knob”) control of lamp powers is significantly better than that achievable with scalar (“single knob”) control.The difficulties of using scalar control in RTP are more severe in the case of temperature trajectory design than in the case of steady-state temperature maintenance. For example, with scalar control the rate of temperature increase during ramping is limited because temperature nonuniformity can cause slip defects in the wafer. A numerical technique is presented for designing multivariable lamp power trajectories to obtain near-optimal temperature uniformity while wafer temperature tracks a specified ramp, resulting in slip-free ramp rates much faster than those achievable with scalar control.

Analysis of the Effect of Heating Control Conditions on Temperature Distribution in a Wafer During Rapid Thermal Processing With Lamp Heaters

2001 ◽  
Author(s):  
Shigeki Hirasawa ◽  
Tadashi Suzuki ◽  
Shigenao Maruyama ◽  
Yuhei Takeuchi
Keyword(s):  
Steady State ◽  
Temperature Distribution ◽  
Thermal Processing ◽  
Radiative Heat ◽  
Rapid Thermal Processing ◽  
Three Dimensional ◽  
Heating Process ◽  
Computation Technique ◽  
Shielding Ring ◽  
Optimum Heating

Abstract To unify temperature distribution in a wafer during rapid thermal processing, we calculated the effect of the heating control conditions on temperature distributions in the wafer during heat-up and at steady state by using a program for analyzing three-dimensional radiative heat transfer. We calculated optimum monitoring positions on the wafer in order to minimize the temperature distribution in the wafer. The effects of rotating the wafer, the spacing between the wafer and the shielding ring, the number of monitoring positions, and the initial non-uniform temperature distribution were also calculated. The minimum steady temperature distribution in the wafer at the optimum condition was calculated as ±0.1 K during 100 K/s heat-up and ±0.02 K at 1273 K steady state. We also developed a rapid parallel-computation technique to find the optimum heating control conditions for the whole heating process.

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