A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications

2014 ◽  
Author(s):  
Ranjan R. Lamichhane ◽  
Nance Ericsson ◽  
Shane Frank ◽  
Chuck Britton ◽  
Laura Marlino ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
High Voltage ◽  
Wide Bandgap ◽  
Gate Driver

An SOI-based High-Voltage, High-Temperature Gate-Driver for SiC FET

2007 ◽  
Author(s):  
M. A Huque ◽  
R. Vijayaraghavan ◽  
M. Zhang ◽  
B. J. Blalock ◽  
L M. Tolbert ◽  
...  
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
Gate Driver

scholarly journals A UNIVERSAL SOI-BASED HIGH TEMPERATURE GATE DRIVER INTEGRATED CIRCUIT FOR SiC POWER SWITCHES WITH ON-CHIP SHORT CIRCUIT PROTECTION

2011 ◽  
Vol 20 (03) ◽  
pp. 471-484 ◽  
Author(s):  
LIANG ZUO ◽  
ROBERT GREENWELL ◽  
SYED K. ISLAM ◽  
M. A. HUQUE ◽  
BENJAMIN J. BLALOCK ◽  
...  
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
Integrated Circuit ◽  
Heat Sink ◽  
Low Cost ◽  
Short Circuit ◽  
Silicon On Insulator ◽  
Successful Operation ◽  
Power Switches ◽  
Gate Driver

In recent years, increasing demand for hybrid electric vehicles (HEVs) has generated the need for reliable and low-cost high-temperature electronics which can operate at the high temperatures under the hood of these vehicles. A high-voltage and high temperature gate-driver integrated circuit for SiC FET switches with short circuit protection has been designed and implemented in a 0.8-micron silicon-on-insulator (SOI) high-voltage process. The prototype chip has been successfully tested up to 200°C ambient temperature without any heat sink or cooling mechanism. This gate-driver chip can drive SiC power FETs of the DC-DC converters in a HEV, and future chip modifications will allow it to drive the SiC power FETs of the traction drive inverter. The converter modules along with the gate-driver chip will be placed very close to the engine where the temperature can reach up to 175ΰC. Successful operation of the chip at this temperature with or without minimal heat sink and without liquid cooling will help achieve greater power-to-volume as well as power-to-weight ratios for the power electronics module.

Simulations of Heterostructures Based on 3C-4H and 6H-4H Silicon Carbide Polytypes

2018 ◽  
Vol 924 ◽  
pp. 302-305
Author(s):  
Muhammad Haroon Rashid ◽  
Ants Koel ◽  
Toomas Rang
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
High Frequency ◽  
High Performance ◽  
Light Emitting Diode ◽  
Wide Bandgap ◽  
Photovoltaic Device ◽  
Light Emitting ◽  
Current Voltage ◽  
Bandgap Semiconductors

In the last decade, silicon carbide (SiC) has gained a remarkable position among wide bandgap semiconductors due to its high temperature, high frequency, and high power electronics applications. SiC heterostructures, based on the most prominent polytypes like 3C-SiC, 4H-SiC and 6H-SiC, exhibit distinctive electrical and physical properties that make them promising candidates for high performance optoelectronic applications. The results of simulations of nn-junction 3C-4H/SiC and 6H-4H/SiC heterostructures, at the nanoscale and microscale, are presented in this paper. Nanoscale devices are simulated with QuantumWise Atomistix Toolkit (ATK) software, and microscale devices are simulated with Silvaco TCAD software. Current-voltage (IV) characteristics of nanoscale and microscale simulated devices are compared and discussed. The effects of non-ideal bonding at the heterojunction interface due to lattice misplacements (axial displacement of bonded wafers) are studied using the ATK simulator. These simulations lay the groundwork for the experiments, which are targeted to produce either a photovoltaic device or a light-emitting diode (working in the ultraviolet or terahertz spectra), by direct bonding of SiC polytypes.

scholarly journals Performance of Various SiC Devices and their Behavior in DC/DC Converter

2019 ◽  
Vol 9 (2S3) ◽  
pp. 62-67
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
High Voltage ◽  
Material Properties ◽  
High Frequency ◽  
Buck Converter ◽  
Nano Materials ◽  
Comparative Performance ◽  
Semiconducting Properties ◽  
Good Material

An extensive research on nano materials was carried out and the properties of Si were studied, Post study it was felt that there must be a material which exhibits semiconducting properties of Si with high breakdown voltage and work till high temperature range. Silicon Carbide (SiC) devices provided the answer for this. These devices are well known for high frequency, high voltage, high temperature and high power for their good material properties compared with silicon power MOSFET. In this paper, a study was conducted on various Silicon Carbide devices available in the market and the comparative performance of these devices were analysed. Furthermore there is a comparison of N channel silicon MOSFET device and silicon carbide device placed in bidirectional DC/DC buck converter in which Silicon Carbide device exhibit superior properties than Si device.

scholarly journals High temperature, Smart Power Module for aircraft actuators

2013 ◽  
Vol 2013 (HITEN) ◽  
pp. 000069-000074
Author(s):  
Khalil El Falahi ◽  
Stanislas Hascoët ◽  
Cyril Buttay ◽  
Pascal Bevilacqua ◽  
Luong-Viet Phung ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Wide Temperature Range ◽  
Power Module ◽  
Smart Power ◽  
Temperature Range ◽  
Electric Aircraft ◽  
Gate Driver ◽  
Proper Operation ◽  
More Electric Aircraft

More electric aircraft require converters that can operate over a wide temperature range (−55 to more than 200°C). Silicon carbide JFETs can satisfy these requirements, but there is a need for suitable peripheral components (gate drivers, passives. . . ). In this paper, we present a “smart power module” based on SiC JFETs and dedicated integrated gate driver circuits. The design is detailed, and some electrical results are given, showing proper operation of the module up to 200°C.

Characterization of Electric Discharge Machining for Silicon Carbide Single Crystal

2008 ◽  
Vol 600-603 ◽  
pp. 855-858 ◽  
Author(s):  
Tomohisa Kato ◽  
Toshiya Noro ◽  
Hideaki Takahashi ◽  
Satarou Yamaguchi ◽  
Kazuo Arai
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Electric Discharge ◽  
High Voltage ◽  
High Speed ◽  
Surface Damage ◽  
Lower Surface ◽  
Etch Pits ◽  
Electric Discharge Machining

In this study, we report electric discharge machining (EDM) as a new cutting method for silicon carbide (SiC) single crystals. Moreover, we discuss characteristics and usefulness of the EDM for the SiC. The EDM realized not only high speed and smooth cutting but also lower surface damage. Defect propagation in the EDM SiCs have been also estimated by etch pits observation using molten KOH, however, we confirmed the EDM has caused no damage inside the SiCs in spite of high voltage and high temperature during the machining.

High-κ Dielectrics for 4H-Silicon Carbide: Present Status and Future Perspective

2021 ◽  
Author(s):  
Amna Siddiqui ◽  
Rabia Yasmin Khosa ◽  
Muhammad Usman
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Electrical Properties ◽  
Electric Field ◽  
High Power ◽  
Present Status ◽  
Wide Bandgap ◽  
Future Perspective ◽  
Breakdown Electric Field ◽  
High Breakdown Electric Field

Owing to its superior material and electrical properties such as wide bandgap and high breakdown electric field, 4H-silicon carbide (4H-SiC) has shown promise in high power, high temperature, and radiation...

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