Analysis of nonlinear low-noise amplifiers in massive MIMO base stations

This paper presents a study of linearity in wideband CMOS low noise amplifiers (LNA) and its relationship to power consumption in context of Long Term Evolution (LTE) systems and its future developments. Using proposed figure of merit (FoM) to compare 35 state-of-the-art LNA circuits published over the last decade, the paper explores a dependence between amplifier performance (i.e., combined linearity, noise figure, and gain) and power consumption. In order to satisfy stringent linearity specifications for LTE standard (and its likely successors), the paper predicts that LNA FoM increase in the range of +0.2 dB/mW is expected and will inevitably translate into a significant increase in power consumption—a critical budget planning aspect for handheld devices, active antenna arrays, and base stations operating in small cells.

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Centimeter-wave low-noise amplifiers for satellite communications

10.2514/6.1976-299 ◽

1976 ◽

Author(s):

R. LEVIN

Keyword(s):

Satellite Communications ◽

Low Noise ◽

Low Noise Amplifiers ◽

Centimeter Wave

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Massive MIMO-Based 5G Networks: Energy Harvesting Base Stations with Minimum Storage

International Journal of Advanced Scientific Research & Development (IJASRD) ◽

10.26836/ijasrd/2019/v6/i3/60308 ◽

2019 ◽

Vol 6 (3) ◽

pp. 55

Author(s):

S. Uma ◽

V. Brinda

Keyword(s):

Energy Harvesting ◽

Massive Mimo ◽

Base Stations ◽

5G Networks

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Infrared and Visible—Near Infrared Electroluminescence Developments for FA in AlGaN/GaN HEMTS on SiC

ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2010p0393 ◽

2010 ◽

Author(s):

M. Bouya ◽

D. Carisetti ◽

J.C. Clement ◽

N. Malbert ◽

N. Labat ◽

...

Keyword(s):

Failure Analysis ◽

Near Infrared ◽

High Electron Mobility Transistor ◽

Low Noise ◽

Civil Defense ◽

Base Stations ◽

Infrared Range ◽

High Electron ◽

Radar Applications ◽

Gan Hemts

Abstract HEMT (High Electron Mobility Transistor) are playing a key role for power and RF low noise applications. They are crucial components for the development of base stations in the telecommunications networks and for civil, defense and space radar applications. As well as the improvement of the MMIC performances, the localization of the defects and the failure analysis of these devices are very challenging. To face these challenges, we have developed a complete approach, without degrading the component, based on front side failure analysis by standard (Visible-NIR) and Infrared (range of wavelength: 3-5 µm) electroluminescence techniques. Its complementarities and efficiency have been demonstrated through two case studies.

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ИССЛЕДОВАНИЕ НИТРИД-ГАЛЛИЕВЫХ МАЛОШУМЯЩИХ УСИЛИТЕЛЕЙ ПРИ КРИОГЕННЫХ ТЕМПЕРАТУРАХ

Nanoindustry Russia ◽

10.22184/1993-8578.2020.13.3s.347.352 ◽

2020 ◽

Vol 96 (3s) ◽

pp. 347-352

Author(s):

Д.Г. Алипа ◽

В.В. Краснов ◽

В.М. Минненбаев ◽

А.В. Редька ◽

Ю.В. Федоров

Keyword(s):

Remote Sensing ◽

Gallium Nitride ◽

Millimeter Wave ◽

Low Noise ◽

Low Noise Amplifiers ◽

Cryogenic Temperatures ◽

Space Systems ◽

Earth Remote Sensing ◽

Hydrogen Level

В статье представлены результаты исследования возможности применения при криогенных температурах водородного уровня дискретных приборов и монолитных схем на основе нитрида галлия в составе малошумящих усилителей сантиметрового и миллиметрового диапазона длин волн для приемных устройств систем дистанционного зондирования Земли из космоса и в составе криогенных комплексов наблюдения космического пространства. The article presents the results of the research on the possibility of using discrete devices and gallium nitride monolithic circuits at the cryogenic temperatures of hydrogen level as part of low-noise amplifiers of centimeter and millimeter-wave bands used in receivers of Earth remote sensing space systems and in cryogenic systems for space observation.

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