The influence of annealing temperature and film thickness on crystallization behaviors of IGZO thin films

2015 ◽  
Author(s):  
Jaeseung Jo ◽  
JaeYu Cho ◽  
Hee Kyeung Hong ◽  
Sungman Kim ◽  
Jehun Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Annealing Temperature ◽  
Crystallization Behaviors

scholarly journals Emergence and Evolution of Crystallization in TiO2 Thin Films: A Structural and Morphological Study

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1409
Author(s):  
Ofelia Durante ◽  
Cinzia Di Giorgio ◽  
Veronica Granata ◽  
Joshua Neilson ◽  
Rosalba Fittipaldi ◽  
...  
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Transition Metal Oxides ◽  
Annealing Temperature ◽  
Morphological Properties ◽  
Degree Of Crystallinity ◽  
Tio2 Thin Films ◽  
Force Microscopy ◽  
Heat Treated ◽  
Complementary Techniques

Among all transition metal oxides, titanium dioxide (TiO2) is one of the most intensively investigated materials due to its large range of applications, both in the amorphous and crystalline forms. We have produced amorphous TiO2 thin films by means of room temperature ion-plasma assisted e-beam deposition, and we have heat-treated the samples to study the onset of crystallization. Herein, we have detailed the earliest stage and the evolution of crystallization, as a function of both the annealing temperature, in the range 250–1000 °C, and the TiO2 thickness, varying between 5 and 200 nm. We have explored the structural and morphological properties of the as grown and heat-treated samples with Atomic Force Microscopy, Scanning Electron Microscopy, X-ray Diffractometry, and Raman spectroscopy. We have observed an increasing crystallization onset temperature as the film thickness is reduced, as well as remarkable differences in the crystallization evolution, depending on the film thickness. Moreover, we have shown a strong cross-talking among the complementary techniques used displaying that also surface imaging can provide distinctive information on material crystallization. Finally, we have also explored the phonon lifetime as a function of the TiO2 thickness and annealing temperature, both ultimately affecting the degree of crystallinity.

High Remanent Polarization in Laser Ablated SrBi2Nb2O9Thin Films

2003 ◽  
Vol 780 ◽  
Author(s):  
Rasmi R. Das ◽  
P. Bhattacharya ◽  
W. Pérez ◽  
Ram S. Katiyarxya
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Coercive Field ◽  
Remanent Polarization ◽  
Annealing Temperature ◽  
Dielectric Breakdown ◽  
Breakdown Strength ◽  
Suitable Material ◽  
Average Grain Size ◽  
Degree Of Orientation

AbstractPulsed-laser-deposition technique was used to grow SrBi2Nb2O9(SBN) thin films on platinized silicon substrates. The effect of annealing temperature and film thicknesses on the structural and electrical properties has been studied. The average grain size and rms surface roughness was found to increase with increasing annealing temperature. The degree of orientation along the (200) direction was increased with the film thicknesses. The remanent polarization was found to be increased with the film thicknesses and was attributed to the selftexturing characteristics of SBN films. Thin films with higher thickness (∼570 nm) exhibited high value of remanent polarization (∼38 ν/cm2) with coercive field of 185 kV/cm. There was a reduction of coercive field with the film thickness. The dielectric constant was observed to be independent of the film thickness. The increase in loss tangent with increasing film thicknesses was attributed to the reduction of dielectric breakdown strength of the films. The SBN thin films showed minimal fatigue characteristics and suitable material for memory devices.

BAND GAP SHIFT DUE TO NITROGEN DOPING, COMPOSITION GAS PRESSURE AND MICROWAVE POWER OF a-C:N THIN FILMS GROWN BY NEWLY-DEVELOPED SURFACE WAVE MICROWAVE PLASMA CVD

2004 ◽  
Vol 11 (06) ◽  
pp. 559-562
Author(s):  
M. RUSOP ◽  
S. ADHIKARI ◽  
A. M. M. OMER ◽  
S. ADHIKARY ◽  
H. UCHIDA ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Wave ◽  
Film Thickness ◽  
Band Gap ◽  
Microwave Power ◽  
Annealing Temperature ◽  
Optical Band Gap ◽  
Microwave Plasma ◽  
Gas Pressure ◽  
Developed Surface

This paper reports the band gap shifting due to nitrogen ( N 2) doping, microwave power and composition gas pressure of nitrogenated amorphous carbon ( a - C : N ) thin films deposited by newly-developed surface wave microwave plasma chemical vapor deposition (SWMP-CVD). Results show that the optical band gap decreased from 4.1 eV to 2.4 eV corresponding to the increase of N 2 doping from 0 to 5% in the gas ratio. However, further increase of N 2 doping beyond 5% did not decrease the band gap. It was found that composition gas pressure and launched MW power during film deposition also largely control the optical band gap. Investigation of annealing effects on optical band gap and film thickness of the N 2 doped films revealed that both band gap and film thickness decrease significantly with increase of annealing temperature. The optical band gap decreased from 2.4 eV to 1.1 eV, while film thickness decreases from 320 nm to 50 nm corresponding to 200 to 400°C annealing temperature. The results revealed that the properties of a - C : N can be tuned by changing the annealing temperature, composition gas pressure and microwave power of the SWMP-CVD system.

The effect of film thickness, Se/S ratio and annealing temperature on the nonlinear absorption behaviors in amorphous GaSexS1−x (0 ≤ x≤ 1) thin films

2013 ◽  
Vol 288 ◽  
pp. 107-113 ◽  
Author(s):  
Pınar Işık ◽  
Ahmet Karatay ◽  
H. Gul Yaglioglu ◽  
Ayhan Elmali ◽  
Ulaş Kürüm ◽  
...  
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Nonlinear Absorption ◽  
Annealing Temperature

Structural Properties of PbI2 Thin Film

2014 ◽  
Vol 879 ◽  
pp. 175-179 ◽  
Author(s):  
Safaa I. Mohammed ◽  
Naser Mahmoud Ahmed ◽  
Y. Al-Douri ◽  
U. Hashim
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Structural Analysis ◽  
Film Thickness ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Thermal Evaporation ◽  
Lead Iodide ◽  
Thermal Evaporation Method ◽  
Growth Orientation

Lead iodide (PbI2) thin films were successfully prepared by thermal evaporation method on a glass substrate at room temperature. The structural analysis of these films was done by XRD. The results revealed that the crystallite size increases when increasing the film thickness and annealing temperature. In addition, the preferred growth orientation was 001 for all the samples.

Thickness Effect on Microstructure and Residual Stress of Annealed Copper Thin Films

2011 ◽  
Vol 681 ◽  
pp. 139-144 ◽  
Author(s):  
Renaud Vayrette ◽  
Christian Rivero ◽  
Sylvain Blayac ◽  
Karim Inal
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Film Thickness ◽  
Crystallite Size ◽  
Annealing Temperature ◽  
Stress Generation ◽  
Thickness Effect ◽  
Electron Backscattered Diffraction ◽  
Electroplated Copper ◽  
Stress Models

In this work, coupled effects of thickness and annealing temperature on both microstructure and residual stress of electroplated copper thin films are studied. Microstructure is investigated by Electron Backscattered Diffraction (EBSD) and residual stress is estimated from samples curvature. All films exhibit highly twinned grains. Except for several microns films, median crystallite size grows with both film thickness and annealing temperature. Concerning residual stress, it decreases, first as the increase of film thickness, and secondly as the decrease of annealing temperature. The comparison between experiments and stress models demonstrates that the root mechanisms of residual stress generation change with annealing temperature. As well as annealing temperature, film thickness determines the level of residual stress through control of microstructure. Furthermore, EBSD investigations confirmed that the relevant microstructural length to define mechanical properties of thin copper films is the median crystallite size.

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