On the annealing temperature, penetration depth of oxygen and film thickness on the DC and AC electrical properties and nano-structure of Ti thin films

Vacuum ◽  
2010 ◽  
Vol 84 (6) ◽  
pp. 770-777 ◽  
Author(s):  
K. Khojier ◽  
H. Savaloni
Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1409
Author(s):  
Ofelia Durante ◽  
Cinzia Di Giorgio ◽  
Veronica Granata ◽  
Joshua Neilson ◽  
Rosalba Fittipaldi ◽  
...  

Among all transition metal oxides, titanium dioxide (TiO2) is one of the most intensively investigated materials due to its large range of applications, both in the amorphous and crystalline forms. We have produced amorphous TiO2 thin films by means of room temperature ion-plasma assisted e-beam deposition, and we have heat-treated the samples to study the onset of crystallization. Herein, we have detailed the earliest stage and the evolution of crystallization, as a function of both the annealing temperature, in the range 250–1000 °C, and the TiO2 thickness, varying between 5 and 200 nm. We have explored the structural and morphological properties of the as grown and heat-treated samples with Atomic Force Microscopy, Scanning Electron Microscopy, X-ray Diffractometry, and Raman spectroscopy. We have observed an increasing crystallization onset temperature as the film thickness is reduced, as well as remarkable differences in the crystallization evolution, depending on the film thickness. Moreover, we have shown a strong cross-talking among the complementary techniques used displaying that also surface imaging can provide distinctive information on material crystallization. Finally, we have also explored the phonon lifetime as a function of the TiO2 thickness and annealing temperature, both ultimately affecting the degree of crystallinity.


2013 ◽  
Vol 74 (12) ◽  
pp. 1672-1677 ◽  
Author(s):  
Y.J. Zhang ◽  
Z.T. Liu ◽  
D.Y. Zang ◽  
X.S. Che ◽  
L.P. Feng ◽  
...  

2001 ◽  
Vol 685 ◽  
Author(s):  
Won-Jae Lee ◽  
Chang-Ho Shin ◽  
In-Kyu You ◽  
Il-Suk Yang ◽  
Sang-Ouk Ryu ◽  
...  

AbstractThe SrTa2O6 (STO) thin films were prepared by plasma enhanced atomic layer deposition (PEALD) with alternating supply of reactant sources, Sr[Ta(C2H5O)5(C4H10NO)]2 {Strontium bis-[tantalum penta-ethoxide dimethyllaminoethoxide]; Sr(Ta(OEt)5▪dmae)2} and O2plasma. It was observed that the uniform and conformal STO thin films were successfully deposited using PEALD and the film thickness per cycle was saturated at about 0.8 nm at 300°C. Electrical properties of SrTa2O6 (STO) thin films prepared on Pt/SiO2/Si substrates with annealing temperatures have been investigated. While the grain size and dielectric constant of STO films increased with increasing annealing temperature, the leakage current characteristics of STO films slightly deteriorated. The leakage current density of a 40nm-STO film was about 5×10−8A/cm2 at 3V.


2003 ◽  
Vol 780 ◽  
Author(s):  
Rasmi R. Das ◽  
P. Bhattacharya ◽  
W. Pérez ◽  
Ram S. Katiyarxya

AbstractPulsed-laser-deposition technique was used to grow SrBi2Nb2O9(SBN) thin films on platinized silicon substrates. The effect of annealing temperature and film thicknesses on the structural and electrical properties has been studied. The average grain size and rms surface roughness was found to increase with increasing annealing temperature. The degree of orientation along the (200) direction was increased with the film thicknesses. The remanent polarization was found to be increased with the film thicknesses and was attributed to the selftexturing characteristics of SBN films. Thin films with higher thickness (∼570 nm) exhibited high value of remanent polarization (∼38 ν/cm2) with coercive field of 185 kV/cm. There was a reduction of coercive field with the film thickness. The dielectric constant was observed to be independent of the film thickness. The increase in loss tangent with increasing film thicknesses was attributed to the reduction of dielectric breakdown strength of the films. The SBN thin films showed minimal fatigue characteristics and suitable material for memory devices.


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